Characterization of Silicon Oxides Formed by Light-Induced Anodisation for Silicon Solar Cell Surface Passivation

2014 ◽  
Vol 1647 ◽  
Author(s):  
Jie Cui ◽  
Xi Wang ◽  
Robert Opila ◽  
Alison Lennon
Keyword(s):  
Steady State ◽  
Silicon Dioxide ◽  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Thermally Grown Oxide ◽  
Silicon Surfaces ◽  
Quasi Steady State ◽  
Silicon Dioxide Film ◽  
Uniform Drift ◽  
P Type

ABSTRACTIn this paper we report the properties of the anodic silicon dioxide film formed using light-induced anodisation (LIA) method and its potential to be used as surface passivation layer of p-type silicon surfaces of silicon solar cells. The high uniformity of the formed oxide is possibly due to the uniform drift of the positive charge carriers in the silicon to the surface being anodised. The oxide grows at higher rate than that in nitric acid, an oxide layer with thickness of 18 nm can be formed by anodising for 10 min with 15 V bias in 0.5 M sulphuric acid. After annealing in oxygen and then forming gas at 400 °C for 30 min, an average effective carrier lifetime of 120 μs was measured by quasi-steady state photoluminance on 180 μm p-type 3-5 Ohm cm Cz silicon wafers, with a value of 110 μs being measured for the same wafers passivated by a thermally-grown oxide of the same thickness. The properties of the anodic silicon dioxide layers formed by LIA have been characterized by ellipsometry, x-ray photoelectron spectroscopy, quasi-steady state photoluminance and Fourier transform infrared spectroscopy.

Wet Chemical Oxidation of Silicon Surfaces Prior to the Deposition of All-PECVD AlOx/a-SiNx Passivation Stacks for Silicon Solar Cells

2012 ◽  
Vol 195 ◽  
pp. 310-313 ◽  
Author(s):  
Abdelazize Laades ◽  
Heike Angermann ◽  
Hans Peter Sperlich ◽  
Uta Stürzebecher ◽  
Carlos Alberto Díaz Álvarez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Chemical Vapor ◽  
Chemical Oxidation ◽  
Silicon Surfaces ◽  
Silicon Solar Cells ◽  
Rear Side ◽  
Type Silicon ◽  
Wet Chemical ◽  
P Type

Aluminum oxide (AlOx) is currently under intensive investigation for use in surface passivation schemes in solar cells. AlOx films contain negative charges and therefore generate an accumulation layer on p-type silicon surfaces, which is very favorable for the rear side of p-type silicon solar cells as well as the p+-emitter at the front side of n-type silicon solar cells. However, it has been reported that quality of an interfacial silicon sub-oxide layer (SiOx), which is usually observed during deposition of AlOx on Silicon, strongly impacts the silicon/AlOx interface passivation properties [1]. The present work demonstrates that a convenient way to control the interface is to form thin wet chemical oxides of high quality prior to the deposition of AlOx/a-SiNx:H stacks by the plasma enhanced chemical vapor deposition (PECVD).

Study of Surface Passivation of CZ c-Si by PECVD a-Si:H Films; A Comparison Between Quasi-Steady-State and Transient Photoconductance Decay Measurement

2013 ◽  
Vol 1536 ◽  
Author(s):  
Omid Madani Ghahfarokhi ◽  
Karsten von Maydell ◽  
Carsten Agert
Keyword(s):  
Steady State ◽  
Gas Flow ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Minority Carrier Lifetime ◽  
Hydrogen Gas ◽  
Quasi Steady State ◽  
Effective Lifetime ◽  
Transient Mode

ABSTRACTWe have investigated the passivation of low lifetime non-polished Czochralski (CZ) mono-crystalline silicon (c-Si) wafers by hydrogenated amorphous silicon (a-Si:H), deposited by plasma enhanced chemical vapor deposition (PECVD) technique. The dependence of the effective lifetime (τeff) on the deposition parameters including hydrogen gas flow, power and temperature has been studied. Minority carrier lifetime was measured as deposited and also after an annealing step in both quasi-steady-state (QSS) and transient mode of photoconductance decay. By comparison between τeff measured in each of the aforementioned modes, two distinguishable behaviors could be observed. Moreover, to get further insight into the surface passivation mechanism, we have modeled the recombination at a-Si:H/c-Si interface based on the amphoteric nature of dangling bonds. The results of our modeling show that the discrepancy observed between QSS and transient mode is due to the high recombination rate that exists in the bulk of defective CZ wafer and also partly related to the different thicknesses monitored in each mode. So, by comparison between the injection level dependency of τeff measured in QSS and transient modes, we introduce a valuable technique for the evaluation of c-Si bulk lifetime.

scholarly journals Surface Passivation of Boron-Diffused p-Type Silicon Surfaces With (1 0 0) and (1 1 1) Orientations by ALD Al$_{2}$O$_{3}$ Layers

2013 ◽  
Vol 3 (2) ◽  
pp. 678-683 ◽  
Author(s):  
Wensheng Liang ◽  
Klaus J. Weber ◽  
Dongchul Suh ◽  
Sieu P. Phang ◽  
Jun Yu ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Silicon Surfaces ◽  
Type Silicon ◽  
P Type

Accuracy of Interstitial Iron Measurements on P-Type Multicrystalline Silicon Blocks by Quasi-Steady-State Photoconductance

2017 ◽  
Vol 7 (5) ◽  
pp. 1216-1223 ◽  
Author(s):  
Mohsen Goodarzi ◽  
Ronald A. Sinton ◽  
Hao Jin ◽  
Peiting Zheng ◽  
Wei Chen ◽  
...  
Keyword(s):  
Steady State ◽  
Multicrystalline Silicon ◽  
Quasi Steady State ◽  
P Type

Network reconstruction based on steady-state data

2008 ◽  
Vol 45 ◽  
pp. 161-176 ◽  
Author(s):  
Eduardo D. Sontag
Keyword(s):  
Steady State ◽  
Reverse Engineering ◽  
Theoretical Method ◽  
Network Reconstruction ◽  
Quasi Steady State ◽  
State Data

This paper discusses a theoretical method for the “reverse engineering” of networks based solely on steady-state (and quasi-steady-state) data.

Sign in / Sign up

Export Citation Format

Share Document