Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)
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Further EOT scaling of Ge/HfO2 over Si/HfO2 MOS systems

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159209 ◽

2003 ◽

Cited By ~ 1

Author(s):

K. Kita ◽

M. Sasagawa ◽

K. Tomida ◽

M. Tohyama ◽

K. Kyuno ◽

...

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Ru gate electrode for a La-oxide gate insulator deposited by metalorganic chemical vapor deposition

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159191 ◽

2003 ◽

Author(s):

T. Shimizu ◽

K. Ishii ◽

E. Suzuki

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Gate Insulator ◽

Gate Electrode ◽

Metalorganic Chemical

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EOT scaling and device issues for high-k gate dielectrics

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159206 ◽

2003 ◽

Cited By ~ 1

Author(s):

M.I. Gardner ◽

S. Gopalan ◽

J. Gutt ◽

J. Peterson ◽

Hong-Jyh Li ◽

...

Keyword(s):

Gate Dielectrics ◽

High K

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Method of increasing gate nitridation and its impact on CMOS devices

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159182 ◽

2003 ◽

Author(s):

V.P. Gopinath ◽

V. Hornback ◽

Y. Le ◽

A. Kamath ◽

L. Duong ◽

...

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Extending the life of N/O stack gate dielectric with gate electrode engineering

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159200 ◽

2003 ◽

Author(s):

Qi Xiang ◽

Z. Krivokapic ◽

W. Maszara ◽

Ming-Ren Lin

Keyword(s):

Gate Dielectric ◽

Gate Electrode

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Vapor-liquid hybrid deposition (VALID) of hafnium silicate films using Hf(O/sup t/C4H/sub 9/)4 and Si(OC2H5)4 precursors

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159175 ◽

2003 ◽

Author(s):

Y. Xuan ◽

T. Yasuda

Keyword(s):

Hafnium Silicate ◽

Vapor Liquid

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Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159197 ◽

2003 ◽

Author(s):

A. Uedono ◽

R. Mitsuhashi ◽

A. Horiuchi ◽

K. Torii ◽

K. Yamabe ◽

...

Keyword(s):

Positron Annihilation ◽

Gate Dielectric ◽

Mos Structures

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Properties of tantalum silicate thin films prepared by metalorganic decomposition

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159194 ◽

2003 ◽

Author(s):

K.M.A. Salam ◽

H. Saito ◽

H. Fukuda

Keyword(s):

Thin Films ◽

Metalorganic Decomposition

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Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159183 ◽

2003 ◽

Author(s):

Ching-Wei Chen ◽

Chao-Hsin Chien ◽

Shih-Chich Ou ◽

Tsu-Hsiu Perng ◽

Da-Yuan Lee ◽

...

Keyword(s):

Gate Dielectric

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Atomic layer deposition chemistry, mechanisms and related physical properties of high permittivity dielectric oxides

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) ◽

10.1109/iwgi.2003.159195 ◽

2003 ◽

Author(s):

K. Kukli

Keyword(s):

Atomic Layer Deposition ◽

Physical Properties ◽

Atomic Layer ◽

High Permittivity ◽

Layer Deposition

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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Further EOT scaling of Ge/HfO2 over Si/HfO2 MOS systems

Ru gate electrode for a La-oxide gate insulator deposited by metalorganic chemical vapor deposition

EOT scaling and device issues for high-k gate dielectrics

Method of increasing gate nitridation and its impact on CMOS devices

Extending the life of N/O stack gate dielectric with gate electrode engineering

Vapor-liquid hybrid deposition (VALID) of hafnium silicate films using Hf(O/sup t/C4H/sub 9/)4 and Si(OC2H5)4 precursors

Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation

Properties of tantalum silicate thin films prepared by metalorganic decomposition

Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric

Atomic layer deposition chemistry, mechanisms and related physical properties of high permittivity dielectric oxides

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)
Latest Publications