Ru gate electrode for a La-oxide gate insulator deposited by metalorganic chemical vapor deposition

2003 ◽  
Author(s):  
T. Shimizu ◽  
K. Ishii ◽  
E. Suzuki
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Gate Electrode ◽  
Metalorganic Chemical

Low Temperature Deposition of HfO2 Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition

2006 ◽  
Vol 527-529 ◽  
pp. 1079-1082 ◽  
Author(s):  
Shiro Hino ◽  
Tomohiro Hatayama ◽  
Naruhisa Miura ◽  
Tatsuo Ozeki ◽  
Eisuke Tokumitsu
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Low Temperature Deposition ◽  
Temperature Deposition ◽  
Metalorganic Chemical

Low temperature deposition of HfO2 films on 4H-SiC(0001) substrates by pulse introduced metalorganic chemical vapor deposition (MOCVD) using tetrakis-diethylamido-hafnium [Hf[N(C2H5)2]4, (TDEAH)] and H2O has been investigated. HfO2 films with relatively low leakage current density of 10-4 A/cm2 were obtained even at a deposition temperature as low as 190 °C. We demonstrate that the HfO2/SiC interface, where the HfO2 was deposited at 190 °C, has lower interface state density than a typical thermally-grown SiO2/SiC interface. It is also shown by X-ray photoelectron spectroscopy (XPS) that the HfO2/SiC structure fabricated at 190 °C has lower SiOx count than the HfO2/SiC structure fabricated at 400 °C.

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

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