Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation

2003 ◽  
Author(s):  
A. Uedono ◽  
R. Mitsuhashi ◽  
A. Horiuchi ◽  
K. Torii ◽  
K. Yamabe ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Gate Dielectric ◽  
Mos Structures

Radiation Hardness for Silicon Oxide and Aluminum Oxide on 4H-SiC

2018 ◽  
Vol 924 ◽  
pp. 229-232 ◽  
Author(s):  
Anders Hallén ◽  
Sethu Saveda Suvanam
Keyword(s):  
Proton Irradiation ◽  
Silicon Oxide ◽  
Positive Charge ◽  
Gate Dielectric ◽  
Radiation Hardness ◽  
Flat Band ◽  
Capacitance Voltage ◽  
Cv Measurements ◽  
Radiation Hard ◽  
Mos Structures

The radiation hardness of two dielectrics, SiO2and Al2O3, deposited on low doped, n-type 4H-SiC epitaxial layers has been investigated by exposing MOS structures involving these materials to MeV proton irradiation. The samples are examined by capacitance voltage (CV) measurements and, from the flat band voltage shift, it is concluded that positive charge is induced in the exposed structures detectable for fluence above 1×1011cm-2. The positive charge increases with proton fluence, but the SiO2/4H-SiC structures are slightly more sensitive, showing that Al2O3can provide a more radiation hard passivation, or gate dielectric for 4H-SiC devices.

scholarly journals Модель влияния смещения затвора при ионизирующем облучении МОП-структур

2020 ◽  
Vol 54 (2) ◽  
pp. 189
Author(s):  
О.В. Александров ◽  
С.А. Мокрушина
Keyword(s):  
Ionizing Radiation ◽  
Silicon Substrate ◽  
Gate Dielectric ◽  
Quantitative Model ◽  
Threshold Shift ◽  
Gate Bias ◽  
Surface Component ◽  
Mos Structures

The new quantitative model of influence of gate bias on the threshold shift of MOS-structures at the ionizing radiation which is based on the accounting of holes trapping in a thin border layer of gate dielectric on interface with a silicon substrate is developed. The model allows to describe the smooth growth of threshold shift with gate bias – approximately linear from a dose for a surface component and nonlinear for a volume component. The threshold shift at a negative gate bias is modelled on the basis of the accounting of holes generation at ionizing radiation in the border layer.

Hole Mobility in Inversion Layers of MOS Structures with Superthin Gate Dielectric

1979 ◽  
pp. 61-74
Author(s):  
A. A. Guzev ◽  
V. A. Gurtov ◽  
A. V. Rzhanov ◽  
A. A. Frantsuzov
Keyword(s):  
Gate Dielectric ◽  
Hole Mobility ◽  
Mos Structures

Distributions of electric parameters in MOS structures on 3C-SiC substrate

Open Physics ◽  
2013 ◽  
Vol 11 (2) ◽  
Author(s):  
Krzysztof Piskorski ◽  
Henryk Przewlocki ◽  
Romain Esteve ◽  
Mietek Bakowski
Keyword(s):  
Gate Dielectric ◽  
Contact Potential Difference ◽  
Flat Band ◽  
Electrical Parameters ◽  
Contact Potential ◽  
Mos Structure ◽  
Effective Contact ◽  
Semiconductor Voltage ◽  
Electric Parameters ◽  
Mos Structures

AbstractIn this work studies of some electrical parameters of the MOS structure based on 3C-SiC substrate are presented. The effective contact potential difference ϕMS, the barrier height at the gate-dielectric interface E BG and the flat-band in semiconductor voltage V FB were measured using several electric and photoelectric techniques. Values of these parameters obtained on structures with different gate areas decrease monotonically with increasing parameter R, defined as the ratio of the gate perimeter to the gate area. Such behavior confirmed results obtained on MOS structures on silicon substrate and also supported our hypothesis that the mechanical stress in the dielectric layer under the metal gate causes non uniform distribution of some parameters over the gate area of MOS structure.

Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

2006 ◽  
Vol 252 (9) ◽  
pp. 3201-3208 ◽  
Author(s):  
V. Slugeň ◽  
L. Harmatha ◽  
M. Ťapajna ◽  
P. Ballo ◽  
P. Písečný ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Positron Annihilation ◽  
Nitrogen Doped ◽  
Positron Annihilation Study ◽  
Mos Structures

Radiation Dosimeter Based on Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals

2011 ◽  
Vol 495 ◽  
pp. 120-123 ◽  
Author(s):  
Nicola Nedev ◽  
Emil Manolov ◽  
Diana Nesheva ◽  
Kiril Krezhov ◽  
Roumen Nedev ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Linear Variation ◽  
Γ Irradiation ◽  
Semiconductor Structures ◽  
Flatband Voltage ◽  
Mos Structures ◽  
Higher Doses

MOS structures containing silicon nanocrystals in the gate dielectric have been tested as dosimeters for ionizing radiation. Before irradiation the nanocrystals have been charged with electrons by applying a pulse to the gate electrode. The γ-irradiation with doses in the range 0-100 Gy causes approximately linear variation of the flatband voltage, resulting in sensitivities of ~ 2.5 mV/Gy. At higher doses the sensitivity decreases because of decrease of the oxide electric field.

Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models

2002 ◽  
Vol 147 (1-2) ◽  
pp. 214-217 ◽  
Author(s):  
Yiming Li ◽  
Jam-Wem Lee ◽  
Ting-Wei Tang ◽  
Tien-Sheng Chao ◽  
Tan-Fu Lei ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Gate Dielectric ◽  
Quantum Effects ◽  
Quantum Mechanical ◽  
High K ◽  
Mechanical Models ◽  
Mos Structures ◽  
High K Gate Dielectric
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