The Effect of Ultrasonic Treatments on Current Transport Processes in Al-Al2O3-p-CdTe-Mo Structure

It was established that ultrasonic treatments (USTs) have practically no effect on the patterns of current flow in the Al-Al2O3-p-CdTe-Mo structure in the forward direction, namely, as in the absence of ultrasonic action, they appear in the sequence J∼V, J∼V2, J∼V5.3, and J∼V2. The effect of ultrasonic treatments affects only the magnitude of the flowing current; at low voltages, the current becomes somewhat larger, and at high voltages, it practically does not change. Changes in the magnitude of the flowing current are explained on the basis of the assumption that the recombination of nonequilibrium carriers in such a structure occurs through complex pair recombination complexes and, as a result of ultrasonic treatments, the number of both small acceptors and deep recombination centers increases.

Моделирование образования каскада смещений и переходных ионизационных процессов в кремниевых полупроводниковых структурах при нейтронном воздействии

The formation of a disordered defect region in bulk silicon is simulated using the molecular-dynamics method for various energies of a primary recoil atom. Variations in the volume and number of radiation-induced defects in a cluster during its formation are calculated. The generation rates of nonequilibrium carriers and amplitude-temporal dependences of pulses of ionization currents in test Schottky diodes with hyperhigh frequencies are found theoretically.

Auger Recombination in Quantum Well Laser with Participation of Electrons in Waveguide Region

A new mechanism of nonradiative recombination of nonequilibrium carriers in semiconductor quantum wells is suggested and discussed. For a studied Auger recombination process the energy of localized electron-hole pair is transferred to barrier carriers due to Coulomb interaction. The analysis of the rate and the coefficient of this process is carried out. It is shown, that there exists two processes of thresholdless and quasithreshold types, and thresholdless one is dominant. The coefficient of studied process is a non-monotonous function of quantum well width having maximum in region of narrow quantum wells. Comparison of this process with CHCC process shows that these two processes of nonradiative recombination are competing in narrow quantum wells, but prevail at different quantum well widths.

Влияние низкодозного протонного облучения на характеристики инжекционных диодов на основе 4H-SiC

The effect of low-dose proton irradiation (irradiation dose 10^10–1 . 8 × 10^11 cm^–2) on the capacitance–voltage, forward current–voltage, and reverse-recovery characteristics of 4 H -SiC p – n _ o junction diodes is studied. Irradiation is performed with 1.8-MeV protons through a 10-μm-thick Ni-film (the proton energy and Ni-film thickness were chosen so that the projected proton range in silicon carbide is approximately equal to the p – n _ o junction depth). It is shown that proton irradiation in the above doses (i) does not change the concentration of majority carriers, (ii) leads to a dramatic decrease in the lifetime of nonequilibrium carriers (at a low injection level) (by several tens of times at the highest irradiation dose), and (iii) decreases the reverse-recovery charge at a high injection level (by up to a factor of 3 at the highest irradiation dose).

Влияние глубоких уровней дислокаций в гетероэпитаксиальных InGaAs/GaAs и GaAsSb/GaAs p-i-n-структурах на время релаксации неравновесных носителей

The results of an experimental study of the capacitance–voltage ( C – V ) characteristics and deep-level transient spectroscopy (DLTS) spectra of p ^+– p ^0– i – n ^0 homostructures based on undoped dislocationfree GaAs layers and InGaAs/GaAs and GaAsSb/GaAs heterostructures with homogeneous networks of misfit dislocations, all grown by liquid-phase epitaxy (LPE), are presented. Deep-level acceptor defects identified as HL 2 and HL 5 are found in the epitaxial p ^0 and n ^0 layers of the GaAs-based structure. The electron and hole dislocation-related deep levels, designated as, respectively, ED 1 and HD 3, are detected in InGaAs/GaAs and GaAsSb/GaAs heterostructures. The following hole trap parameters: thermal activation energies ( E _ t ), capture cross sections (σ_ p ), and concentrations ( N _ t ) are calculated from the Arrhenius dependences to be E _ t = 845 meV, σ _ p = 1.33 × 10^–12 cm^2, N _ t = 3.80 × 10^14 cm^–3 for InGaAs/GaAs and E _ t = 848 meV, σ _ p = 2.73 × 10^–12 cm^2, N _ t = 2.40 × 10^14 cm^–3 for GaAsSb/GaAs heterostructures. The concentration relaxation times of nonequilibrium carriers are estimated for the case in which dislocation-related deep acceptor traps are involved in this process. These are 2 × 10^–10 s and 1.5 × 10^–10 s for, respectively, the InGaAs/GaAs and GaAsSb/GaAs heterostructures and 1.6 × 10^–6 s for the GaAs homostructures.