Разогрев и релаксация энергии электронно-дырочного газа в треке первичного атома отдачи

Based on the Monte Carlo algorithm, a method has been developed for calculating the energy spectrum of hot nonequilibrium electrons and holes in the track of the primary recoil atom when exposed to single fast neutrons. The calculations of the heating and subsequent relaxation of nonequilibrium charge carriers in silicon in the track of a charged particle with initial energies in the range of 50...200 keV are carried out. The characteristic temperatures of the electron and hole plasma were obtained, which amounted to 5400 K and 2700 K, respectively. The effect of radiation-induced heating of charge carriers on the failure stability of static memory elements is discussed.

Моделирование образования каскада смещений и переходных ионизационных процессов в кремниевых полупроводниковых структурах при нейтронном воздействии

The formation of a disordered defect region in bulk silicon is simulated using the molecular-dynamics method for various energies of a primary recoil atom. Variations in the volume and number of radiation-induced defects in a cluster during its formation are calculated. The generation rates of nonequilibrium carriers and amplitude-temporal dependences of pulses of ionization currents in test Schottky diodes with hyperhigh frequencies are found theoretically.

Topological connectivity analysis of accumulated radiation damage from multiple molecular dynamics recoil cascades

ABSTRACTThe results of sequential large-scale molecular dynamics (MD) simulations of radiation damage cascades in Gd2Ti2O7 and Gd2Zr2O7 are presented. Twelve alpha recoil cascades, each due to a recoil atom with 40 keV of kinetic energy, are performed in both materials and a stark contrast in behaviour observed. Topological connectivity analysis is used to analyse the structural evolution of the two systems. Our results provide important insight into accumulation of disorder in pyrochlore-structured ceramics.