Misfit dislocation–related deep levels in InGaAs/GaAs and GaAsSb/GaAs p–i–n heterostructures and the effect of these on the relaxation time of nonequilibrium carriers

2018 ◽  
Vol 123 (16) ◽  
pp. 161588 ◽  
Author(s):  
M. M. Sobolev ◽  
F. Yu. Soldatenkov ◽  
I. L. Shul'pina
Keyword(s):  
Relaxation Time ◽  
Misfit Dislocation ◽  
Deep Levels ◽  
Nonequilibrium Carriers

scholarly journals Modeling of Photoconductivity of Porous Silicon

2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
L. S. Monastyrskii ◽  
B. S. Sokolovskii ◽  
M. R. Pavlyk ◽  
P. P. Parandii
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Relaxation Time ◽  
Porous Silicon ◽  
Time Evolution ◽  
Average Distance ◽  
Macroporous Silicon ◽  
The Finite Element Method ◽  
Nonequilibrium Carriers ◽  
Element Method

The paper investigates a model of the photoconductivity of macroporous silicon in the conditions of homogeneous generation of photocarriers. By the finite element method, the stationary photoconductivity and the time evolution of photoconductivity after instantaneous shutdown of light are calculated. Dependences of the stationary photoconductivity and relaxation time of photoconductivity on the velocity of recombination of nonequilibrium carriers at the surfaces of pores, radius of pores, and average distance between them are analyzed.

scholarly journals Influence of Surface and Bulk Defects on Contactless Resistivity Measurements of CdTe and Related Compounds

Sensors ◽  
2020 ◽  
Vol 20 (15) ◽  
pp. 4347
Author(s):  
Jan Franc ◽  
Roman Grill ◽  
Jakub Zázvorka
Keyword(s):  
Relaxation Time ◽  
Response Curve ◽  
Level Density ◽  
Radiation Detector ◽  
Deep Levels ◽  
Contactless Measurement ◽  
Contactless Method ◽  
Applied Bias ◽  
Single Exponential ◽  
Exponential Fit

We analyzed the influence of parameters of deep levels in the bulk and conditions on the surface on transient charge responses of semi-insulating samples (CdTe and GaAs). We studied the dependence on the applied bias step used for the experimental evaluation of resistivity in contactless measurement setups. We used simulations based on simultaneous solutions of 1D drift diffusion and Poisson’s equations as the main investigation tool. We found out that the resistivity can be reliably determined by the transient contactless method in materials with a large density of deep levels in the bulk (e.g., semi-insulating GaAs) when the response curve is described by a single exponential. In contrast, the materials with the low deep-level density, like semiconductor radiation detector materials (e.g., CdTe, CdZnTe, etc.), usually exhibit a complex response to applied bias, depending on the surface conditions. We show that a single exponential fit does not represent the true relaxation time and resistivity, in this case. A two-exponential fit can be used for a rough estimate of bulk material resistivity only in a limit of low-applied bias, when the response curve approaches a single-exponential shape. A decreasing of the bias leads to a substantially improved agreement between the evaluated and true relaxation time, which is also consistent with the approaching of the relaxation curve to the single-exponential shape.

Deep Levels in GaN Studied by Extrinsic Photoconductivity Measurement

1996 ◽  
Vol 449 ◽  
Author(s):  
Rong Zhang ◽  
Zhenchun Huang ◽  
Bo Guo ◽  
J. C. Chen ◽  
Li Yan ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Optical Absorption ◽  
Cross Section ◽  
High Resistance ◽  
Room Temperature ◽  
Deep Levels ◽  
Localized States ◽  
Absorption Cross ◽  
Gan Film ◽  
Photoconductivity Measurement

ABSTRACTModulation Extrinsic photoconductivity spectra between 1.44eV and 1.75eV of unintentionally n-doped high resistance GaN film grown by MOCVD are measured at room temperature by using wavelength adjustable Ti:Sapphire laser. We find that there are two major deep levels in the GaN material in the used photon energy range. The relaxation time of excess carriers controlled by those levels are in the order of 10−4sec. The concentration of localized states are determined as 1.8×108cm−3 and 2.5×109cm−3, respectively. A physical model is developed to explain the results and process the data. Using a new method we have determined the optical absorption cross section of deep levels are 1.5×10−17cm2 and 2.7×10−18cm2, respectively.

scholarly journals Picosecond pump-probe of carrier relaxation time in deep levels of HgCdTe

2012 ◽  
Vol 30 (6) ◽  
pp. 503-506
Author(s):  
Fa-Jun MA ◽  
Zhi-Feng LI ◽  
Lu CHEN ◽  
Wei LU
Keyword(s):  
Relaxation Time ◽  
Deep Levels ◽  
Carrier Relaxation ◽  
Pump Probe

Optical detection of misfit dislocation‐induced deep levels at InGaAs/GaAs heterojunctions

1994 ◽  
Vol 64 (26) ◽  
pp. 3572-3574 ◽  
Author(s):  
A. Raisanen ◽  
L. J. Brillson ◽  
R. S. Goldman ◽  
K. L. Kavanagh ◽  
H. H. Wieder
Keyword(s):  
Misfit Dislocation ◽  
Optical Detection ◽  
Deep Levels

Misfit Dislocations in the Ilmenite (FeTiO3)-Hematite (Fe2O3) System

1980 ◽  
Vol 38 ◽  
pp. 212-213 ◽  
Author(s):  
K.P.D. Lagerlöf ◽  
A.H. Heuer ◽  
T.E. Mitchell
Keyword(s):  
Misfit Dislocation ◽  
Lattice Parameters ◽  
Dislocation Network ◽  
Misfit Dislocations ◽  
Space Group ◽  
Two Phases ◽  
Hematite Fe2o3

It has been reported by Lally et. al. [1] that precipitates of hematite (Fe2O3, space group R3c) in a matrix of ilmenite (FeTiO3, space group R3) are lens shaped and flattened along the [0001]-direction. The coherency across the interface is lost by the introduction of a misfit dislocation network, which minimizes the strain due to the deviation in lattice parameters between the two phases [2]. The purpose of this paper is to present a new analysis of this network.

NUCLEAR SPIN-LATTICE RELAXATION TIME IN TIN

1978 ◽  
Vol 39 (C6) ◽  
pp. C6-1215-C6-1216
Author(s):  
H. Ahola ◽  
G.J. Ehnholm ◽  
S.T. Islander ◽  
B. Rantala
Keyword(s):  
Relaxation Time ◽  
Nuclear Spin ◽  
Lattice Relaxation ◽  
Lattice Relaxation Time ◽  
Spin Lattice Relaxation ◽  
Spin Lattice Relaxation Time ◽  
Spin Lattice ◽  
Nuclear Spin Lattice Relaxation
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