scholarly journals Auger Recombination in Quantum Well Laser with Participation of Electrons in Waveguide Region

2018 ◽  
Vol 57 (2) ◽  
pp. 193-198
Author(s):  
A.A. Karpova ◽  
D.M. Samosvat ◽  
A.G. Zegrya ◽  
G.G. Zegrya ◽  
V.E. Bugrov
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Auger Recombination ◽  
Nonradiative Recombination ◽  
Electron Hole ◽  
Quantum Well Laser ◽  
Semiconductor Quantum Wells ◽  
Electron Hole Pair ◽  
Quantum Well Width ◽  
Nonequilibrium Carriers

Abstract A new mechanism of nonradiative recombination of nonequilibrium carriers in semiconductor quantum wells is suggested and discussed. For a studied Auger recombination process the energy of localized electron-hole pair is transferred to barrier carriers due to Coulomb interaction. The analysis of the rate and the coefficient of this process is carried out. It is shown, that there exists two processes of thresholdless and quasithreshold types, and thresholdless one is dominant. The coefficient of studied process is a non-monotonous function of quantum well width having maximum in region of narrow quantum wells. Comparison of this process with CHCC process shows that these two processes of nonradiative recombination are competing in narrow quantum wells, but prevail at different quantum well widths.

scholarly journals Внутризонное поглощение излучения дырками в квантовых ямах InAsSb/AlSb и InGaAsP/InP

2018 ◽  
Vol 52 (2) ◽  
pp. 207
Author(s):  
Н.В. Павлов ◽  
Г.Г. Зегря ◽  
А.Г. Зегря ◽  
В.Е. Бугров
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Incident Radiation ◽  
Radiation Absorption ◽  
Hole Density ◽  
Internal Radiation ◽  
Radiation Losses ◽  
Semiconductor Quantum Wells ◽  
Quantum Well Width ◽  
Split Band

AbstractMicroscopic analysis of intraband radiation absorption by holes with their transition to the spin-split band for InAsSb/AlSb and InGaAsP/InP semiconductor quantum wells is performed in the context of the four-band Kane model. The calculation is performed for two incident-radiation polarizations: along the crystal-growth axis and in the quantum-well plane. It is demonstrated that absorption with transition to the discrete spectrum of spin-split holes has a higher intensity than absorption with transitions to the continuous spectrum. The dependences of the intraband absorption coefficient on temperature, hole density, and quantum- well width are thoroughly analyzed. It is shown that intraband radiation absorption can be the main mechanism of internal radiation losses in lasers based on quantum wells.

Excited states of two-dimensional excitons in quantum wells

2002 ◽  
Vol 80 (7) ◽  
pp. 781-786
Author(s):  
Y P Varshni
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Excited States ◽  
Coulomb Interaction ◽  
Two Dimensional ◽  
Wkb Method ◽  
Electron Hole ◽  
Free Carriers ◽  
Screening Parameter ◽  
Electron Hole Pair

The energies of ten excited states of screened two-dimensional excitons in a semiconducting quantum-well structure are calculated as a function of the screening parameter qs by the WKB method. The screening of the Coulomb interaction between the electron–hole pair by the free carriers present is taken into account by using the screened potential obtained by Stern and Howard (1967). The energies of the excited states are found to decrease with increasing values of the screening parameter qs in all cases. Further the levels become unbound at finite values of the screening parameter. Critical screening parameters are estimated for the ten states. PACS Nos.: 73.21Fg, 78.67De, 71.35-y, 71.35Cc

scholarly journals Cooperative recombination of electron-hole pairs in semiconductor quantum wells under quantizing magnetic fields

2010 ◽  
Vol 81 (15) ◽  
Author(s):  
Y. D. Jho ◽  
X. Wang ◽  
D. H. Reitze ◽  
J. Kono ◽  
A. A. Belyanin ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Electron Hole ◽  
Semiconductor Quantum Wells

Strain-Induced Lateral Confinement of Carriers in Semiconductor Quantum Wells

1988 ◽  
Vol 144 ◽  
Author(s):  
K. Kash ◽  
R. Bhat ◽  
Derek D. Mahoney ◽  
J.M. Worlock ◽  
P.S.D. Lin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Band Gap ◽  
Red Shift ◽  
Lateral Confinement ◽  
Semiconductor Quantum Wells ◽  
20 Nm ◽  
Ingaas Quantum Well

ABSTRACTWe describe here an effort to provide lateral confinement of carriers within a continuous InGaAs quantum well by creating a pattern of strain in the well. A compressed InGaAsP layer overlying the quantum well and the InP barrier was patterned into submicron stressor wires by etching to within approximately 20 nm of the InP barrier. The relaxation of the compression at the edges of the quaternary stressors resulted in dilation of the quantum well material under their centers, thus lowering the band gap of the material, providing confinement for both electrons and holes there. We observed a red shift of the quantum well luminescence of 7 meV for 400 nm wide wires, evidence for the strain-induced lateral confinement. This is the first observation of a red-shifted band gap in submicron strain-confining structures.

TERAHERTZ EMISSION FROM ELECTRICALLY PUMPED SILICON GERMANIUM INTERSUBBAND DEVICES

2007 ◽  
Vol 17 (01) ◽  
pp. 115-120
Author(s):  
N. Sustersic ◽  
S. Kim ◽  
P.-C. Lv ◽  
M. Coppinger ◽  
T. Troeger ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Silicon Germanium ◽  
Heavy Hole ◽  
Light Hole ◽  
Spectral Lines ◽  
Intersubband Transitions ◽  
Terahertz Emission ◽  
Drive Current ◽  
Quantum Well Width

In this paper, we report on current pumped THz emitting devices based on intersubband transitions in SiGe quantum wells. The spectral lines occurred in a range from 5 to 12 THz depending on the quantum well width, Ge concentration in the well, and device temperature. A time-averaged power of 15 nW was extracted from a 16 period SiGe/Si superlattice with quantum wells 22 Å thick, at a device temperature of 30 K and a drive current of 550 mA. A net quantum efficiency of approximately 3 × 10-4 was calculated from the power and drive current, 30 times higher than reported for comparable quantum cascades utilizing heavy-hole to heavy-hole transitions and, taking into account the number of quantum well periods, approximately four times larger than for electroluminescence reported previously from a device utilizing light-hole to heavy-hole transitions.

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