Atomic-Scale Insights on Large-Misfit Heterointerfaces in LSMO/MgO/c-Al2O3

Understanding the interfaces in heterostructures at an atomic scale is crucial in enabling the possibility to manipulate underlying functional properties in correlated materials. This work presents a detailed study on the atomic structures of heterogeneous interfaces in La0.7Sr0.3MnO3 (LSMO) film grown epitaxially on c-Al2O3 (0001) with a buffer layer of MgO. Using aberration-corrected scanning transmission electron microscopy, we detected nucleation of periodic misfit dislocations at the interfaces of the large misfit systems of LSMO/MgO and MgO/c-Al2O3 following the domain matching epitaxy paradigm. It was experimentally observed that the dislocations terminate with 4/5 lattice planes at the LSMO/MgO interface and with 12/13 lattice planes at the MgO/c-Al2O3 interface. This is consistent with theoretical predictions. Using the atomic-resolution image data analysis approach to generate atomic bond length maps, we investigated the atomic displacement in the LSMO/MgO and MgO/c-Al2O3 systems. Minimal presence of residual strain was shown at the respective interface due to strain relaxation following misfit dislocation formation. Further, based on electron energy-loss spectroscopy analysis, we confirmed an interfacial interdiffusion within two monolayers at both LSMO/MgO and MgO/c-Al2O3 interfaces. In essence, misfit dislocation configurations of the LSMO/MgO/c-Al2O3 system have been thoroughly investigated to understand atomic-scale insights on atomic structure and interfacial chemistry in these large misfit systems.

The lattice dislocation trapping mechanism at the ferrite/cementite interface in the Isaichev orientation relationship

We analyze the lattice dislocation trapping mechanism at the ferrite/cementite interface of the Isaichev orientation relationship by atomistic simulations combined with the anisotropic linear elasticity theory and disregistry analysis. We find that the lattice dislocation trapping ability is varied by initial position of the lattice dislocation. The lattice dislocation near the interface is attracted to the interface by the image force generated by the interface shear, while the lattice dislocation located far is either attracted to or repelled from the interface, or even oscillates around the introduced position, depending on the combination of the stress field induced by the misfit dislocation array and the image stress field induced by the lattice dislocation.

The Lattice Dislocation Trapping Mechanism at the Ferrite/Cementite Interface: The Isaichev Orientation Relationship

We analyze the lattice dislocation trapping mechanism at the ferrite/cementite interface (FCI) of the Isaichev orientation relationship (OR) by atomistic simulations combined with the anisotropic linear elasticity theory and disregistry analysis. We find that the lattice dislocation trapping ability is varied by initial position of the lattice dislocation. The lattice dislocation near the interface is attracted to the interface by the image force generated by the interface shear, while the lattice dislocation located far is either attracted to or repelled from the interface, or even oscillates around the introduced position, depending on the combination of the stress field induced by the misfit dislocation array and the image stress field induced by the lattice dislocation.