Non uniform thermal oxidation of SiC and its impact on electrical characteristics

2016 ◽  
Vol 55 (8S2) ◽  
pp. 08PC07 ◽  
Author(s):  
Ryu Nagai ◽  
Ryu Hasunuma ◽  
Kikuo Yamabe
Keyword(s):  
Thermal Oxidation ◽  
Electrical Characteristics

Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment

2018 ◽  
Vol 924 ◽  
pp. 440-443
Author(s):  
Yeganeh Bonyadi ◽  
Peter M. Gammon ◽  
Olayiwola Alatise ◽  
Roozbeh Bonyadi ◽  
Philip A. Mawby
Keyword(s):  
High Temperature ◽  
Thermal Oxidation ◽  
Carrier Lifetime ◽  
Drift Region ◽  
Electrical Characteristics ◽  
Pin Diodes ◽  
Oxidation Treatment ◽  
Temperature Oxidation ◽  
Bipolar Devices ◽  
Minority Carriers

In this paper, the application of a high temperature thermal oxidation and annealing process to 4H-SiC PiN diodes with 35 μm thick drift regions is explored, the aim of which was to increase the carrier lifetime in the 4H-SiC. Diodes were fabricated using 4H-SiC material and underwent a thermal oxidation in dry pure O2 at 1550◦C followed by an argon anneal at the same temperature. Reverse recovery tests indicated a carrier lifetime increase of around 42% which is due to increase of excessive minority carriers in the drift region. The switching results illustrate that the use of this process is a highly effective and efficient way of enhancing the electrical characteristics of high voltage 4H-SiC bipolar devices.

Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O

1990 ◽  
Vol 57 (10) ◽  
pp. 1010-1011 ◽  
Author(s):  
Hyunsang Hwang ◽  
Wenchi Ting ◽  
Bikas Maiti ◽  
Dim‐Lee Kwong ◽  
Jack Lee
Keyword(s):  
Thermal Oxidation ◽  
Gate Dielectric ◽  
Electrical Characteristics ◽  
Rapid Thermal Oxidation

Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation

2012 ◽  
Vol 717-720 ◽  
pp. 989-992 ◽  
Author(s):  
Koji Nakayama ◽  
Atsushi Tanaka ◽  
Katsunori Asano ◽  
Tetsuya Miyazawa ◽  
Masahiko Ito ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Room Temperature ◽  
Surface Recombination ◽  
Electrical Characteristics ◽  
Bulk Carrier ◽  
Standard Process ◽  
Pin Diodes ◽  
Voltage Drops ◽  
Implantation Process ◽  
Reverse Recovery Time

The forward voltage drops of pin diodes with the carbon implantation process or thermal oxidation process using a drift layer of 120 μm thick are around 4.0 V and are lower than those with the standard process. The reverse recovery characteristics of diodes with the standard process or carbon implantation at room temperature show almost the same tendency. In the reverse recovery characteristics at 250 oC, pin diodes with carbon implantation process, however, have the longer reverse recovery time than those with the standard process. These characteristics indicate that a recombination path other than the bulk carrier lifetime, such as the interfaces or the surface recombination, becomes dominant in the reverse recovery characteristics at room temperature.

Process Uniformity and Electrical Characteristics of Thin Gate Dielectrics Grown by Ramped-Temperature Transient Rapid Thermal Oxidation of Silicon

1989 ◽  
Vol 146 ◽  
Author(s):  
Mehrdad M. Moslehit ◽  
Ahmad Kermani
Keyword(s):  
Thermal Oxidation ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Thermal Cycles ◽  
Gate Oxides ◽  
Rapid Thermal Oxidation ◽  
Mos Devices ◽  
Overall Performance ◽  
Process Uniformity ◽  
Transient Thermal

ABSTRACTRapid thermal oxidation (RTO) of Si using transient linearly-ramped-temperature saw-toothed (LRT-ST) and triangular (LRT-TA) thermal cycles has been examined through evaluations of the process uniformity, slip dislocation patterns, and electrical characteristics of MOS devices. The strong effects of the thermal cycle parameters on process uniformity and slips indicate that the overall performance of an RTP tool must be specified both under the steady-state and transient thermal cycles. The electrical characteristics of MOS devices with LRT-grown gate oxides are comparable to those for devices with oxides grown by the trapezoidal thermal cycles.

scholarly journals The Effect of Nitrogen Concentration at Oxynitride Gate Insulators Formed by 28N2 + Implantation into Silicon with Additional Conventional or Rapid Thermal Oxidation

2004 ◽  
Vol 1 (2) ◽  
pp. 41-47
Author(s):  
A. G. Felício ◽  
José Alexandre Diniz ◽  
J. Godoy Fo. ◽  
I. Doi ◽  
M. A. A. Pudenzi ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Secondary Ion Mass Spectrometry ◽  
Nitrogen Concentration ◽  
Oxide Thickness ◽  
Silicon Oxynitride ◽  
Electrical Characteristics ◽  
Mos Capacitors ◽  
Gate Insulators ◽  
Rapid Thermal Oxidation ◽  
Nitrogen Ion

Silicon oxynitride (SiOxNy) insulators have been obtained by nitrogen ion implantation into Si substrates prior to conventional or rapid thermal oxidation. These films have been used as gate insulators in nMOSFETs and MOS capacitors. nMOSFET electrical characteristics, such as field effect mobility between 390 cm2/Vs and 530 cm2/Vs, and sub-threshold slope between 70 mV/decade and 150 mV/decade, were obtained. MOS capacitors were used to obtain capacitance-voltage (C-V) and current-voltage (I-V) measurements. The Equivalent Oxide Thickness (EOT) of the films were obtained from C-V curves, resulting in values between 2.9 nm and 12 nm. SiOxNy gate insulators with EOT between 2.9 nm and 4.3 nm have presented gate leakage current densities between 3 mA/cm2 and 50 nA/cm2. The electrical characteristics were compared and correlated with the nitrogen concentration profiles at SiOxNy/Si of the structures, obtained by Secondary Ion Mass Spectrometry (SIMS).

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