Comparative Transcriptome Analysis of Genes Involved in Sesquiterpene Alkaloid Biosynthesis in Trichoderma longibrachiatum MD33 and UN32

Trichoderma longibrachiatum MD33, a sesquiterpene alkaloid-producing endophyte isolated from Dendrobium nobile, shows potential medical and industrial applications. To understand the molecular mechanisms of sesquiterpene alkaloids production, a comparative transcriptome analysis was performed on strain MD33 and its positive mutant UN32, which was created using Ultraviolet (UV) mutagenesis and nitrogen ion (N+) implantation. The alkaloid production of UN32 was 2.62 times more than that of MD33. One thousand twenty-four differentially expressed genes (DEGs), including 519 up-regulated and 505 down-regulated genes, were identified. Gene Ontology (GO) and Kyoto Encyclopedia of Genes and Genomes (KEGG) pathway analysis revealed 139 GO terms and 87 biosynthesis pathways. Dendrobine, arguably the main sesquiterpene alkaloid the strain MD33 produced, might start synthesis through the mevalonate (MVA) pathway. Several MVA pathway enzyme-coding genes (hydroxy-methylglutaryl-CoA synthase, mevalonate kinase, and farnesyl diphosphate synthase) were found to be differentially expressed, suggesting that physical mutagenesis can disrupt genome integrity and gene expression. Some backbone post-modification enzymes and transcript factors were either discovered, suggesting the sesquiterpene alkaloid metabolism in T. longibrachiatum is a complex genetic network. Our findings help to shed light on the underlying molecular regulatory mechanism of sesquiterpene alkaloids production in T. longibrachiatum.

Unconventional Superconductivity in Samarium Nitride

<p>We have studied the nature of unconventional superconductivity in the rare-earth nitride (REN) samarium nitride (SmN) for the purposes of providing a deeper understanding of the mechanisms that lead to such a phenomenon in an already extremely interesting material. An approximate low energy model has been introduced for SmN based on previous bandstructure calculation and recent experimental results. This consists of the non-dispersive 4f band associated with the samarium ion crossing through the dispersive 5d band associated with the nitrogen ion. Due to large spin polarisation in the bandstructure we need only consider the majority-spin 5d and 4f bands which lead to an essentially spinless two band system. Starting from this two band system, we apply the k dot p method to it in order to create an effective model for the system. This effective model for the material acts as the platform from which we study the possible triplet superconducting pairing. Basing our pairing on the electron-phonon interaction we have postulated the existence of triplet pairing in the 5d band, from which we have successfully characterised the pair potential in this system through the self-consistency equation. The pair potential Delta_d could be solved analytically in a special case where the Fermi level was equal to the 4f band. In this case we find that above a threshold effective coupling strength the superconducting state is established and analytically known. In contrast to this result for the more general case where the Fermi level is different to the 4f band we numerically recover a solution that was exponential in the effective coupling strength which is similar to the pairing as we expect from the single band case. Analytic solutions in this case were not able to be found, however, we know that from our numerical investigations there will exist a solution for any effective coupling strength, contrasting with the special case where the pairing amplitude can disappear below a certain threshold. In conjunction to these results we also examined the situation where the 5d and 4f bands have hybridised together in order to search for unique pairing that may be resistant to disorder. By keeping the triplet pairing only in the 5d band, this translates to hybrid pairing between electrons in the two hybridised bands. Results from the hybridised bands system show a new singlet-like pairing Delta_S which is even in k and singlet in the hybridised band indices. Preliminary numerical results suggest that this pairing indeed exists and occurs only near the avoided crossing of the hybridised bands. The existence of such a pairing, originating from triplet pairing, has exciting implications for the robustness of the superconductivity in the presence of disorder and/or impurities.</p>

Unconventional Superconductivity in Samarium Nitride

<p>We have studied the nature of unconventional superconductivity in the rare-earth nitride (REN) samarium nitride (SmN) for the purposes of providing a deeper understanding of the mechanisms that lead to such a phenomenon in an already extremely interesting material. An approximate low energy model has been introduced for SmN based on previous bandstructure calculation and recent experimental results. This consists of the non-dispersive 4f band associated with the samarium ion crossing through the dispersive 5d band associated with the nitrogen ion. Due to large spin polarisation in the bandstructure we need only consider the majority-spin 5d and 4f bands which lead to an essentially spinless two band system. Starting from this two band system, we apply the k dot p method to it in order to create an effective model for the system. This effective model for the material acts as the platform from which we study the possible triplet superconducting pairing. Basing our pairing on the electron-phonon interaction we have postulated the existence of triplet pairing in the 5d band, from which we have successfully characterised the pair potential in this system through the self-consistency equation. The pair potential Delta_d could be solved analytically in a special case where the Fermi level was equal to the 4f band. In this case we find that above a threshold effective coupling strength the superconducting state is established and analytically known. In contrast to this result for the more general case where the Fermi level is different to the 4f band we numerically recover a solution that was exponential in the effective coupling strength which is similar to the pairing as we expect from the single band case. Analytic solutions in this case were not able to be found, however, we know that from our numerical investigations there will exist a solution for any effective coupling strength, contrasting with the special case where the pairing amplitude can disappear below a certain threshold. In conjunction to these results we also examined the situation where the 5d and 4f bands have hybridised together in order to search for unique pairing that may be resistant to disorder. By keeping the triplet pairing only in the 5d band, this translates to hybrid pairing between electrons in the two hybridised bands. Results from the hybridised bands system show a new singlet-like pairing Delta_S which is even in k and singlet in the hybridised band indices. Preliminary numerical results suggest that this pairing indeed exists and occurs only near the avoided crossing of the hybridised bands. The existence of such a pairing, originating from triplet pairing, has exciting implications for the robustness of the superconductivity in the presence of disorder and/or impurities.</p>

A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation

This study presents an innovative, low-cost, mass-manufacturable ion implantation technique for converting thin film normally on AlGaN/GaN devices into normally off ones. Through TCAD (Technology Computer-Aided Design) simulations, we converted a calibrated normally on transistor into a normally off AlGaN/GaN transistor grown on a silicon <111> substrate using a nitrogen ion implantation energy of 300 keV, which shifted the bandgap from below to above the Fermi level. In addition, the threshold voltage (Vth) was adjusted by altering the nitrogen ion implantation dose. The normally off AlGaN/GaN device exhibited a breakdown voltage of 127.4 V at room temperature because of impact ionization, which showed a positive temperature coefficient of 3 × 10−3 K−1. In this study, the normally off AlGaN/GaN device exhibited an average drain current gain of 45.3%, which was confirmed through an analysis of transfer characteristics by changing the gate-to-source ramping. Accordingly, the proposed technique enabled the successful simulation of a 100-µm-wide device that can generate a saturation drain current of 1.4 A/mm at a gate-to-source voltage of 4 V, with a mobility of 1487 cm2V−1s−1. The advantages of the proposed technique are summarized herein in terms of processing and performance.

Effect of Nitrogen Ion Implantation Energy on the Mechanical and Chemical Properties of AISI M50 Steel

Nitrogen ion implantation has shown its role in enhancing steel surface properties. In this work, AISI M50 steel was implanted with nitrogen ions by using the metal vapor vacuum arc technique with a dose of 2 × 1017 cm−2, and corresponding implanted energies were at 60 keV, 80 keV, and 100 keV, respectively. The distribution of implanted nitrogen ions was calculated, and the samples were tribologically tested and examined. As shown by the results, the microhardness in implanted samples was 1.17 times greater relative to that of the unimplanted sample. The implantation of the nitrogen ion leads to a change in the friction coefficient of the AISI M50 steel. Adhesive wear mechanism occurs in the unimplanted sample, and adhesion resistance tends to increase when nitrogen-implanted energy increases. The formation of oxides α-Fe2O3 and Fe3O4 further enhanced the tribological properties for implanted samples.

Assessment of the Functional Properties of 316L Steel Alloy Subjected to Ion Implantation Used in Biotribological Systems

Clinical trials conducted in many centres worldwide indicate that, despite advances made in the use of biomaterials for medical applications, tribocorrosive wear remains a significant issue. The release of wear residue into body fluids can cause inflammation and, as a result, implant failure. Surface modification is one of the methods used to improve the mechanical, tribological, and fatigue properties of biomaterials. In this article, the authors investigated the impact of ion implantation on improving the functional properties of implant surfaces. This paper presents morphology, geometric surface structure, hardness, and tribological test results for layers obtained by ion implantation with nitrogen and oxygen ions on alloy 316L. The surface morphology and thickness of the implanted layer were examined using scanning microscopy. Atomic force microscopy was used to evaluate the geometric structure of the surface. Instrumented indentation was used to measure nanohardness. Model tribo tests were carried out for reciprocating motion under conditions of dry friction and lubricated friction with Ringer’s solution. The tribological tests showed that the implanted samples had a lower wear than the reference samples. Nitrogen ion implantation increased the hardness of 316L steel by about 45% and increased it by about 15% when oxygen ions were used.