The Design and Optimization of an Anti-Reflection Coating and an Intermediate Reflective Layer to Enhance Tandem Solar Cell Photons Capture

We have theoretically demonstrated an efficient way to improve the optical properties of an anti-reflection coating (ARC) and an intermediate reflective layer (IRL) to enhance tandem solar cell efficiency by localizing the incident photons’ energy on a suitable sub-cell. The optimum designed ARC from a one-dimensional ternary photonic crystal, consisting of a layer of silicon oxynitride (SiON), was immersed between two layers of (SiO2); thicknesses were chosen to be 98 nm, 48 nm, and 8 nm, respectively. The numerical results show the interesting transmission properties of the anti-reflection coating on the viable and near IR spectrum. The IRL was designed from one-dimensional binary photonic crystals and the constituent materials are Bi4Ge3O12 and μc-SiOx: H with refractive indexes was 2.05, and 2.8, respectively. The numbers of periods were set to 10. Thicknesses: d1 = 62 nm and d2 = 40 nm created a photonic bandgap (PBG) in the range of [420 nm: 540 nm]. By increasing the second material thickness to 55 nm, and 73 nm, the PBG shifted to longer wavelengths: [520 nm: 630 nm], and [620 nm: 730 nm], respectively. Thus, by stacking the three remaining structures, the PBG widened and extended from 400 nm to 730 nm. The current theoretical and simulation methods are based on the fundamentals of the transfer matrix method and finite difference time domain method.

Characterisation of silicon oxynitride thin films and their response to swift heavy-ion irradiation

Silicon oxynitrides (a-SiOxNy) are materials whose composition ranges between two binary materials: a-SiO2 and a-Si3N4. In this work, we present a systematic study of the fine structure of the damaged regions produced by swift heavy-ions (SHIs), or ‘ion-tracks’ and quantify the density variation profiles with respect to composition. Thin films were deposited by plasma-enhanced chemical vapor deposition (CVD), where thickness, density, stoichiometry and bond configuration were initially determined. The fine structure and radial size of the ion tracks was determined using small angle X-ray scattering. The tracks exhibit a core-shell cylindrical geometry, with an under-dense core surrounded by an over-dense shell with a smooth transition between the two regions. We observed two trends with composition: a constant increasing ion track radius is observed when the O/Si ratio is below one (0≤x≤1). And saturation of the radial dimensions above this value, being similar to a-SiO2. The IR spectra allowed to quantify the bond configuration and its evolution with fluence. After irradiation, the energy deposited by the SHI irradiation leads to a preferential damage of Si-N bonds. IR spectroscopy also showed the formation of new Si-H bonds with increasing fluences and resulting in a rather complex ion-induced structural modification of the a-SiOxNy network.

Optimization of Fabrication Process for SiON/SiOx Films Applicable as Optical Waveguides

In this paper, the analysis of silicon oxynitride (SiON) films, deposited utilizing the plasma enhanced chemical vapor deposition (PECVD) process, for optical waveguides on silicon wafers is presented. The impact of N2O flow rate on various SiON film properties was investigated. The thickness and refractive index were measured by micro-spot spectroscopic reflectometry and confirmed by spectroscopic ellipsometry. The chemical composition of SiON films was analyzed using Secondary Ion Mass Spectrometry (SIMS). The surface roughness was analyzed using Atomic Force Microscopy (AFM). Increasing the N2O flow rate during deposition caused the deposition rate to increase and the refractive index to decrease. By changing the flow rate of gases into the chamber during the PECVD process, it is possible to precisely adjust the oxygen (O2) ratio and nitrogen (N2) ratio in the SiON film and thus control its optical properties. This was possibility utilized to fabricate SiON films suitable to serve as a waveguide core for optical waveguides with a low refractive index contrast.