Electrical Characteristics of MOS Structures on and Oriented N-Type Silicon as Influenced by Use of Hydrogen Chloride during Thermal Oxidation

1973 ◽  
Vol 120 (10) ◽  
pp. 1436 ◽  
Author(s):  
G. Baccarani ◽  
M. Severi ◽  
G. Soncini
Keyword(s):  
Thermal Oxidation ◽  
Hydrogen Chloride ◽  
Electrical Characteristics ◽  
Type Silicon ◽  
Mos Structures

UV–ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide

1999 ◽  
Vol 2 (1) ◽  
pp. 23-27 ◽  
Author(s):  
Carl-Mikael Zetterling ◽  
Mikael Östling ◽  
Chris I Harris ◽  
Peter C Wood ◽  
S.Simon Wong
Keyword(s):  
Silicon Carbide ◽  
Thermal Oxidation ◽  
Type Silicon ◽  
P Type ◽  
Uv Ozone

Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment

2018 ◽  
Vol 924 ◽  
pp. 440-443
Author(s):  
Yeganeh Bonyadi ◽  
Peter M. Gammon ◽  
Olayiwola Alatise ◽  
Roozbeh Bonyadi ◽  
Philip A. Mawby
Keyword(s):  
High Temperature ◽  
Thermal Oxidation ◽  
Carrier Lifetime ◽  
Drift Region ◽  
Electrical Characteristics ◽  
Pin Diodes ◽  
Oxidation Treatment ◽  
Temperature Oxidation ◽  
Bipolar Devices ◽  
Minority Carriers

In this paper, the application of a high temperature thermal oxidation and annealing process to 4H-SiC PiN diodes with 35 μm thick drift regions is explored, the aim of which was to increase the carrier lifetime in the 4H-SiC. Diodes were fabricated using 4H-SiC material and underwent a thermal oxidation in dry pure O2 at 1550◦C followed by an argon anneal at the same temperature. Reverse recovery tests indicated a carrier lifetime increase of around 42% which is due to increase of excessive minority carriers in the drift region. The switching results illustrate that the use of this process is a highly effective and efficient way of enhancing the electrical characteristics of high voltage 4H-SiC bipolar devices.

Non uniform thermal oxidation of SiC and its impact on electrical characteristics

2016 ◽  
Vol 55 (8S2) ◽  
pp. 08PC07 ◽  
Author(s):  
Ryu Nagai ◽  
Ryu Hasunuma ◽  
Kikuo Yamabe
Keyword(s):  
Thermal Oxidation ◽  
Electrical Characteristics

Physical and Electrical Characteristics of Poly-Si/ZrO2/SiO2/Si MOS Structures

2001 ◽  
Author(s):  
Kwan-Yong Lim ◽  
Dae-Gyu Park ◽  
Heung-Jae Cho ◽  
Joong-Jung Kim ◽  
Jun-Mo Yang ◽  
...  
Keyword(s):  
Electrical Characteristics ◽  
Mos Structures

Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O

1990 ◽  
Vol 57 (10) ◽  
pp. 1010-1011 ◽  
Author(s):  
Hyunsang Hwang ◽  
Wenchi Ting ◽  
Bikas Maiti ◽  
Dim‐Lee Kwong ◽  
Jack Lee
Keyword(s):  
Thermal Oxidation ◽  
Gate Dielectric ◽  
Electrical Characteristics ◽  
Rapid Thermal Oxidation

scholarly journals Study of radiation damage induced by 12 keV X-rays in MOS structures built on high-resistivityn-type silicon

2012 ◽  
Vol 19 (3) ◽  
pp. 340-346 ◽  
Author(s):  
Jiaguo Zhang ◽  
Ioana Pintilie ◽  
Eckhart Fretwurst ◽  
Robert Klanner ◽  
Hanno Perrey ◽  
...  
Keyword(s):  
Radiation Damage ◽  
X Rays ◽  
Type Silicon ◽  
Mos Structures

Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation

2012 ◽  
Vol 717-720 ◽  
pp. 989-992 ◽  
Author(s):  
Koji Nakayama ◽  
Atsushi Tanaka ◽  
Katsunori Asano ◽  
Tetsuya Miyazawa ◽  
Masahiko Ito ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Room Temperature ◽  
Surface Recombination ◽  
Electrical Characteristics ◽  
Bulk Carrier ◽  
Standard Process ◽  
Pin Diodes ◽  
Voltage Drops ◽  
Implantation Process ◽  
Reverse Recovery Time

The forward voltage drops of pin diodes with the carbon implantation process or thermal oxidation process using a drift layer of 120 μm thick are around 4.0 V and are lower than those with the standard process. The reverse recovery characteristics of diodes with the standard process or carbon implantation at room temperature show almost the same tendency. In the reverse recovery characteristics at 250 oC, pin diodes with carbon implantation process, however, have the longer reverse recovery time than those with the standard process. These characteristics indicate that a recombination path other than the bulk carrier lifetime, such as the interfaces or the surface recombination, becomes dominant in the reverse recovery characteristics at room temperature.

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