scholarly journals Effect of ramping from low temperatures on oxygen precipitation in Czochralski silicon

2008 ◽  
Vol 57 (2) ◽  
pp. 1037
Author(s):  
Cui Can ◽  
Ma Xiang-Yang ◽  
Yang De-Ren
Keyword(s):  
Low Temperatures ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

2019 ◽  
Vol 18 (1) ◽  
pp. 1001-1011 ◽  
Author(s):  
Yuheng Zeng ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Xinpeng Zhang ◽  
Lixia Lin ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Phosphorus Doped

Enhancement of oxygen precipitation in quenched Czochralski silicon crystals

1989 ◽  
Vol 66 (8) ◽  
pp. 3958-3960 ◽  
Author(s):  
Akito Hara ◽  
Tetsuo Fukuda ◽  
Toru Miyabo ◽  
Iesada Hirai
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation

Lifetime Degradation by Oxygen Precipitation Combined with Metal Contamination in Czochralski Silicon for Solar Cells

2019 ◽  
Vol 8 (4) ◽  
pp. Q72-Q75 ◽  
Author(s):  
Kohei Onishi ◽  
Kosuke Kinoshita ◽  
Takuto Kojima ◽  
Yoshio Ohshita ◽  
Atsushi Ogura
Keyword(s):  
Solar Cells ◽  
Metal Contamination ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Dependence of Mechanical Strength of Czochralski Silicon Wafers on the Temperature of Oxygen Precipitation Annealing

1997 ◽  
Vol 144 (3) ◽  
pp. 1111-1120 ◽  
Author(s):  
Koji Sueoka ◽  
Masanori Akatsuka ◽  
Hisashi Katahama ◽  
Naoshi Adachi
Keyword(s):  
Mechanical Strength ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Effect of annealing atmosphere on oxygen precipitation and formation of denuded zone in Czochralski silicon wafer

2006 ◽  
Vol 203 (10) ◽  
pp. 2370-2375 ◽  
Author(s):  
Can Cui ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Ruixin Fan ◽  
Duanlin Que
Keyword(s):  
Silicon Wafer ◽  
Annealing Atmosphere ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Kinetic Model of Thermal Donor Evolution

1997 ◽  
Vol 469 ◽  
Author(s):  
K. F. Kelton ◽  
R. Falster
Keyword(s):  
Interstitial Oxygen ◽  
Oxygen Loss ◽  
Free Oxygen ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Cluster Evolution ◽  
Oxygen Precipitation ◽  
High Diffusion Rate ◽  
Normal Diffusion ◽  
Small Clusters

ABSTRACTKinetic aspects of thermal donor (TD) formation in Czochralski silicon are shown to be consistent with the evolution of small oxygen clusters, as described within the classical theory of nucleation. Predictions for TD generation and interstitial oxygen loss are presented. Favorable agreement with experimental data requires that the rate constants describing cluster evolution be increased over those expected for a oliffusion-limited flux based on a normal diffusion coefficient for oxygen in silicon. This may signal an anomalously high diffusion rate for temperatures less than 500°C, as has been suggested by others. However, it may instead signal an enhanced concentration of free oxygen near clusters smaller than the critical size for nucleation. This is expected when the interfacial attachment rates become comparable with the rates at which oxygen atoms arrive in the vicinity of the sub-critical clusters. The link between thermal donor generation and oxygen precipitation processes demonstrated here provides a consistent framework for better understanding and controlling oxygen precipitation in silicon. Further, the kinetic TD generation and oxygen loss data provide a new window into the dynamical processes for small clusters, which underlie all nucleation phenomena.

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