scholarly journals Wafer-level fine pitch Cu-Cu bonding for 3-D stacking of integrated circuits

2012 ◽  
Author(s):  
Lan Peng
Keyword(s):  
Integrated Circuits ◽  
Wafer Level ◽  
Fine Pitch ◽  
Cu Bonding

Wafer level underfill study for high density ultra-fine pitch Cu-Cu bonding for 3D IC stacking

2014 ◽  
Author(s):  
Ling Xie ◽  
Sunil Wickramanayaka ◽  
Boo Yung Jung ◽  
Jerry Aw Jie Li ◽  
Lim Jung-kai ◽  
...  
Keyword(s):  
High Density ◽  
Wafer Level ◽  
3D Ic ◽  
Fine Pitch ◽  
Cu Bonding

scholarly journals Reliability Evaluation of Fan-Out Type 3D Packaging-On-Packaging

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 295
Author(s):  
Pao-Hsiung Wang ◽  
Yu-Wei Huang ◽  
Kuo-Ning Chiang
Keyword(s):  
Finite Element ◽  
Thermal Cycling ◽  
Glass Substrate ◽  
High Speed ◽  
Coefficient Of Thermal Expansion ◽  
Three Dimensional ◽  
Design Parameters ◽  
Time To Failure ◽  
Wafer Level ◽  
Fine Pitch

The development of fan-out packaging technology for fine-pitch and high-pin-count applications is a hot topic in semiconductor research. To reduce the package footprint and improve system performance, many applications have adopted packaging-on-packaging (PoP) architecture. Given its inherent characteristics, glass is a good material for high-speed transmission applications. Therefore, this study proposes a fan-out wafer-level packaging (FO-WLP) with glass substrate-type PoP. The reliability life of the proposed FO-WLP was evaluated under thermal cycling conditions through finite element simulations and empirical calculations. Considering the simulation processing time and consistency with the experimentally obtained mean time to failure (MTTF) of the packaging, both two- and three-dimensional finite element models were developed with appropriate mechanical theories, and were verified to have similar MTTFs. Next, the FO-WLP structure was optimized by simulating various design parameters. The coefficient of thermal expansion of the glass substrate exerted the strongest effect on the reliability life under thermal cycling loading. In addition, the upper and lower pad thicknesses and the buffer layer thickness significantly affected the reliability life of both the FO-WLP and the FO-WLP-type PoP.

High-precision wafer-level Cu-Cu bonding for 3DICs

2014 ◽  
Author(s):  
Masashi Okada ◽  
Isao Sugaya ◽  
Hajime Mitsuishi ◽  
Hidehiro Maeda ◽  
Toshimasa Shimoda ◽  
...  
Keyword(s):  
High Precision ◽  
Wafer Level ◽  
Cu Bonding

scholarly journals Bonding-Based Wafer-Level Vacuum Packaging Using Atomic Hydrogen Pre-Treated Cu Bonding Frames

Micromachines ◽  
2018 ◽  
Vol 9 (4) ◽  
pp. 181 ◽  
Author(s):  
Koki Tanaka ◽  
Hideki Hirano ◽  
Masafumi Kumano ◽  
Joerg Froemel ◽  
Shuji Tanaka
Keyword(s):  
Atomic Hydrogen ◽  
Vacuum Packaging ◽  
Wafer Level ◽  
Cu Bonding

scholarly journals Cu/SiO2CMP Process for Wafer Level Cu Bonding

2013 ◽  
Vol 20 (2) ◽  
pp. 47-51 ◽  
Author(s):  
Minjae Lee ◽  
Sarah Eunkyung Kim ◽  
Sungdong Kim
Keyword(s):  
Wafer Level ◽  
Cu Bonding
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