Oxidation of Silicon and Nitridaticn of SiO2 by Rapid Thermal Processes

1987 ◽  
Vol 92 ◽  
Author(s):  
N. Chan Tung ◽  
Y. Caratini ◽  
J.L. Buevoz
Keyword(s):  
Oxide Thickness ◽  
Breakdown Field ◽  
Thermal Processes ◽  
Electrical Characteristics ◽  
Gate Oxides ◽  
A Value ◽  
High Resolution Tem ◽  
S Period ◽  
Thermal Nitridation ◽  
Mis Capacitors

ABSTRACTThin gate oxides of 30 to 150 Å have been grown in a rapid thermal annealing machine. Experiments were performed in the temperature range of 1000 to 1250°C for an oxidation time of 5 to 60 s. The fairly extensive kinetics data show that linear growth occurs with an activation energy Ea of 1.4 eV for the 5-60 s period. The oxide homogeneity was evaluated and gave a value of 1.9 A for a mean oxide thickness of 102 A. The electrical characteristics of Al-gate capacitors were assessed by C-V and I-V measurements. Rapid thermal nitridation of a 96 A SiO2 has been performed at a temperature of 1150°C for a nitridaticn time up to 150 s. An average breakdown field of 14.6 MV/cm has been obtained for MIS capacitors. High resolution TEM show a good interface SioXNY-Si.

Nitric Oxide Rapid Thermal Nitridation of Thin Gate Oxides

1997 ◽  
Vol 470 ◽  
Author(s):  
J. Kuehne ◽  
S. Hattangady ◽  
J. Piccirillo ◽  
G. C. Xing ◽  
G. E. Miner ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Secondary Ion Mass Spectrometry ◽  
Minority Carrier Lifetime ◽  
Oxide Thickness ◽  
Atomic Percent ◽  
Gate Oxides ◽  
Nitrogen Incorporation ◽  
Nitrogen Concentrations ◽  
Thermal Nitridation ◽  
Percent Nitrogen

ABSTRACTNitric oxide rapid thermal nitridation of thin gate oxides was investigated. Oxides from 25 to 55 Å were grown in O2 and subsequently nitrided in a nitric oxide (NO) ambient using an Applied Materials RTP Centura chamber. Nitrogen incorporation and film thickness growth during NO nitridation were evaluated. Peak nitrogen incorporation was most strongly influenced by temperature and time, with moderate influence by initial oxide thickness, and no significant influence due to NO flow rate. Peak nitrogen concentrations ranged from 1 to 9 atomic percent as characterized by Secondary Ion Mass Spectrometry (SIMS) analysis. Oxide growth during nitridation ranged from 2 Å to 11 Å with no degradation in uniformity. These data were used in the design of two 40 Å oxynitride processes incorporating 2 and 4 peak atomic percent nitrogen. High quality MOS capacitors were demonstrated with these dielectrics. Performance was compared against a baseline furnace process as well as non-nitrided RTO. Throughout this work, the chamber integrity was monitored using visual inspection, minority carrier lifetime (MCLT) and surface photovoltage (SPV). No contamination, corrosion or other degradation of the process chamber was observed in over 6 months' operation with over 700 NO processes completed. The controllability, uniformity and high nitrogen incorporation of rapid thermal NO nitridation make it an attractive process for deep sub-micron gate insulators.

Electrical Characteristics of Metal - (La0.27Y0.73)2O3 - Silicon Capacitors

2003 ◽  
Vol 786 ◽  
Author(s):  
E. J. Preisler ◽  
N. A. Bojarczuk ◽  
S. Guha
Keyword(s):  
Silicon Oxide ◽  
Oxide Thickness ◽  
Electrical Characteristics ◽  
Metal Insulator ◽  
Silicon Oxide Layer ◽  
Flat Interface ◽  
Capacitance Voltage ◽  
Mis Capacitors ◽  
Atomically Flat ◽  
Density Of Interface States

ABSTRACTAn investigation of metal-insulator-silicon capacitors, utilizing single crystal (La0.27Y0.73)2O3 as the insulator is presented. Crystalline insulators are of interest because of the possibilities of obtaining an atomically flat interface and entirely eliminating the presence of dangling bonds at the interface.Capacitance – voltage measurements performed on MIS capacitors demonstrate a dielectric constant of 11.4 and suggest the absence of any interfacial silicon oxide layer. The equivalent oxide thickness of the sample with the thinnest dielectric layer is 15 Å. The density of interface states for the best samples is found to be in the mid 1012 cm−2eV−1 range and did not vary significantly after typical annealing treatments.

Silicon Surface Chemical Treatments in Oxide/Nitride Dielectric Stack Properties

2002 ◽  
Vol 716 ◽  
Author(s):  
D. Jacques ◽  
S. Petitdidier ◽  
J.L. Regolini ◽  
K. Barla
Keyword(s):  
Oxygen Content ◽  
Oxide Thickness ◽  
Morphological Data ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Chemical Cleaning ◽  
Force Microscopy ◽  
Chemical Treatments ◽  
Atomic Force ◽  
Interfacial Oxygen

AbstractOxide/Nitride dielectric stack is widely used as the standard dielectric for DRAM capacitors. The influence of the chemical cleaning prior to the stack formation has been studied in this work. As a result, morphological data such as stack surface roughness (Atomic Force Microscopy) and silicon nitride (SiN) incubation time for growth are comparable for all the studied cases on <Si>. However, Tof-SIMS exhibits different oxygen content at the Si/stack interface following the different chemical treatments. Electrical measurements show comparable C-V and I-V results, for the same Equivalent Oxide Thickness (same capacitance at strong accumulation i.e.-3V) while the different studied interfaces bring different interface states density with lower values for higher interfacial oxygen content. For DRAM applications, a clear improvement in electrical characteristics is obtained under low interfacial oxygen content conditions. Results are compared in embedded-DRAM cells for which we developed an industrially compatible dielectric deposition sequence to obtain minimum leakage current with maximum specific capacitance and no particular linking constraints.

Impact of Organic Contaminants from the Environment on Electrical Characteristics of Thin Gate Oxides

1998 ◽  
Vol 37 (Part 1, No. 5A) ◽  
pp. 2468-2471 ◽  
Author(s):  
Tamotsu Ogata ◽  
Cozy Ban ◽  
Akemi Ueyama ◽  
Seiji Muranaka ◽  
Tomohiko Hayashi ◽  
...  
Keyword(s):  
Organic Contaminants ◽  
Electrical Characteristics ◽  
Gate Oxides

scholarly journals Electrical and Chemical Characterization of FIB-Deposited Insulators

1997 ◽  
Author(s):  
A. N. Campbell ◽  
D. M. Tanner ◽  
J. M. Soden ◽  
D. K. Stewart ◽  
A. Doyle ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Chemical Properties ◽  
Chemical Characterization ◽  
Breakdown Field ◽  
Gate Oxides ◽  
Spectrometry Analysis ◽  
Metal Insulator Metal

Abstract The electrical and chemical properties of insulators produced by codeposition of siloxane compounds or TEOS with oxygen in a focused ion beam (FIB) system were investigated. Metal-insulator-metal capacitor structures were fabricated and tested. Specifically, leakage current and breakdown voltage were measured and used to calculate the effective resistance and breakdown field. Capacitance measurements were performed on a subset of the structures. It was found that the siloxanebased FIB-insulators had superior electrical properties to those based on TEOS. Microbeam Rutherford backscattering spectrometry analysis and Fourier transform infrared spectroscopy were used to characterize the films and to help understand the differences in electrical behavior as a function of gas chemistry and deposition conditions. Finally, a comparison is made between the results presented here, previous results for FIB-deposited insulators, and typical thermally-grown gate oxides and interlevel dielectric Si02 insulators.

Effect of the Field Oxidation Process on the Electrical Characteristics of 6500V 4H-SiC JBS Diodes

2020 ◽  
Vol 1014 ◽  
pp. 144-148
Author(s):  
Ling Sang ◽  
Jing Hua Xia ◽  
Liang Tian ◽  
Fei Yang ◽  
Rui Jin ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Oxide Layer ◽  
Vapor Deposition ◽  
Oxidation Process ◽  
Chemical Vapor ◽  
Oxide Thickness ◽  
Electrical Characteristics ◽  
Field Plate ◽  
Plate Length ◽  
Field Oxide

The effect of the field oxidation process on the electrical characteristics of 6500V 4H-SiC JBS diodes is studied. The oxide thickness and field plate length have an effect on the reverse breakdown voltage of the SiC JBS diode. According the simulation results, we choose the optimal thickness of the oxide layer and field plate length of the SiC JBS diode. Two different field oxide deposition processes, which are plasma enhanced chemical vapor deposition (PECVD) and low pressure chemical vapor deposition (LPCVD), are compared in our paper. When the reverse voltage is 6600V, the reverse leakage current of SiC JBS diodes with the field oxide layer obtained by LPCVD process is 0.7 μA, which is 60% lower than that of PECVD process. When the forward current is 25 A, the forward voltage of SiC JBS diodes with the field oxide layer obtained by LPCVD process is 3.75 V, which is 10% higher than that of PECVD process. There should be a trade-off between the forward and reverse characteristics in the actual high power and high temperature applications.

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