Nitric Oxide Rapid Thermal Nitridation of Thin Gate Oxides

1997 ◽  
Vol 470 ◽  
Author(s):  
J. Kuehne ◽  
S. Hattangady ◽  
J. Piccirillo ◽  
G. C. Xing ◽  
G. E. Miner ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Secondary Ion Mass Spectrometry ◽  
Minority Carrier Lifetime ◽  
Oxide Thickness ◽  
Atomic Percent ◽  
Gate Oxides ◽  
Nitrogen Incorporation ◽  
Nitrogen Concentrations ◽  
Thermal Nitridation ◽  
Percent Nitrogen

ABSTRACTNitric oxide rapid thermal nitridation of thin gate oxides was investigated. Oxides from 25 to 55 Å were grown in O2 and subsequently nitrided in a nitric oxide (NO) ambient using an Applied Materials RTP Centura chamber. Nitrogen incorporation and film thickness growth during NO nitridation were evaluated. Peak nitrogen incorporation was most strongly influenced by temperature and time, with moderate influence by initial oxide thickness, and no significant influence due to NO flow rate. Peak nitrogen concentrations ranged from 1 to 9 atomic percent as characterized by Secondary Ion Mass Spectrometry (SIMS) analysis. Oxide growth during nitridation ranged from 2 Å to 11 Å with no degradation in uniformity. These data were used in the design of two 40 Å oxynitride processes incorporating 2 and 4 peak atomic percent nitrogen. High quality MOS capacitors were demonstrated with these dielectrics. Performance was compared against a baseline furnace process as well as non-nitrided RTO. Throughout this work, the chamber integrity was monitored using visual inspection, minority carrier lifetime (MCLT) and surface photovoltage (SPV). No contamination, corrosion or other degradation of the process chamber was observed in over 6 months' operation with over 700 NO processes completed. The controllability, uniformity and high nitrogen incorporation of rapid thermal NO nitridation make it an attractive process for deep sub-micron gate insulators.

Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs

2013 ◽  
Vol 740-742 ◽  
pp. 707-710 ◽  
Author(s):  
Sarah Kay Haney ◽  
Veena Misra ◽  
Daniel J. Lichtenwalner ◽  
Anant K. Agarwal
Keyword(s):  
Nitric Oxide ◽  
Thermal Oxidation ◽  
Conduction Band ◽  
Field Effect ◽  
Atomic Layer ◽  
Gate Oxides ◽  
Thermal Oxide ◽  
Nitrogen Concentrations ◽  
Peak Field

MOSFETs and capacitors have been fabricated to investigate the atomic layer depositon (ALD) of SiO2onto SiC compared to thermal oxidation of SiC. Devices were fabricated on 4H-SiC with the following oxidation treatments: thermal oxidation at 1175°C, thermal oxidation at 1175°C followed by a nitric oxide (NO) anneal at 1175°C, and ALD of SiC at 150°C followed by an NO post oxidation anneal (POA) at 1175°C. ALD of the SiO2was performed using 3-aminopropyltriethoxysiliane (3-APTES), ozone and water. Capacitors fabricated with NO annealed ALD oxide and thermal oxide with NO POA exhibited similar CV behavior and yielded similar Dit of 1e11 at 0.5 eV from the conduction band. MOSFETs fabricated with NO PDA ALD oxide exhibited peak field effect mobilities ranging from 32 – 40.5 cm2/Vs compared to 30 –34.5 cm2/Vs for the MOSFETs with NO annealed thermal oxide. The higher mobilities exhibited by the ALD gate oxides were linked through SIMS to higher nitrogen concentrations at the SiO2/SiC interface.

Oxidation of Silicon and Nitridaticn of SiO2 by Rapid Thermal Processes

1987 ◽  
Vol 92 ◽  
Author(s):  
N. Chan Tung ◽  
Y. Caratini ◽  
J.L. Buevoz
Keyword(s):  
Oxide Thickness ◽  
Breakdown Field ◽  
Thermal Processes ◽  
Electrical Characteristics ◽  
Gate Oxides ◽  
A Value ◽  
High Resolution Tem ◽  
S Period ◽  
Thermal Nitridation ◽  
Mis Capacitors

ABSTRACTThin gate oxides of 30 to 150 Å have been grown in a rapid thermal annealing machine. Experiments were performed in the temperature range of 1000 to 1250°C for an oxidation time of 5 to 60 s. The fairly extensive kinetics data show that linear growth occurs with an activation energy Ea of 1.4 eV for the 5-60 s period. The oxide homogeneity was evaluated and gave a value of 1.9 A for a mean oxide thickness of 102 A. The electrical characteristics of Al-gate capacitors were assessed by C-V and I-V measurements. Rapid thermal nitridation of a 96 A SiO2 has been performed at a temperature of 1150°C for a nitridaticn time up to 150 s. An average breakdown field of 14.6 MV/cm has been obtained for MIS capacitors. High resolution TEM show a good interface SioXNY-Si.

Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interface during Nitric Oxide Passivation – A First Principles Study

2016 ◽  
Vol 858 ◽  
pp. 465-468 ◽  
Author(s):  
D.P. Ettisserry ◽  
Neil Goldsman ◽  
Akin Akturk ◽  
Aivars J. Lelis
Keyword(s):  
Nitric Oxide ◽  
Silicon Dioxide ◽  
First Principles ◽  
Density Functional ◽  
Oxygen Vacancies ◽  
Functional Theory ◽  
Power Mosfets ◽  
Voltage Instability ◽  
Nitrogen Incorporation ◽  
Effective Mobility

In this work, we investigate the behavior of Nitrogen atoms at 4H-Silicon Carbide (4H-SiC)/Silicon dioxide (SiO2) interface during nitric oxide passivation using ab-initio Density Functional Theory. Our calculations suggest different possible energetically favorable and competing mechanisms by which nitrogen atoms could a) incorporate themselves into the oxide, just above the 4H-SiC substrate, and b) substitute for carbon atoms at the 4H-SiC surface. We attribute the former process to cause increased threshold voltage instability (hole traps), and the latter to result in improved effective mobility through channel counter-doping, apart from removing interface traps in 4H-SiC power MOSFETs. These results support recent electrical and XPS measurements. Additionally, Nitric Oxide passivation is shown to energetically favor re-oxidation of the 4H-SiC surface accompanied by the generation of oxygen vacancies under the conditions considered in this work.

Effects of nitridation by nitric oxide on the leakage current of thin SiO2 gate oxides

2000 ◽  
Vol 87 (1) ◽  
pp. 498-501 ◽  
Author(s):  
C. Gerardi ◽  
M. Melanotte ◽  
S. Lombardo ◽  
M. Alessandri ◽  
B. Crivelli ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Leakage Current ◽  
Gate Oxides

Some Observations on the Electrical Characterization of the Heteroepitaxially Grown Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
B. Molnar ◽  
G. Kelner
Keyword(s):  
Activation Energy ◽  
Secondary Ion Mass Spectrometry ◽  
Nitrogen Concentration ◽  
Electrical Characterization ◽  
Impurity Band ◽  
Thin Layers ◽  
Si Substrates ◽  
Nitrogen Concentrations ◽  
Band Conduction

ABSTRACTThis paper re-examines the electrical characterization of thin layers of cubic SiC, grown on (100) Si substrates. The resistivity and Hall coefficient for undoped SiC layers were measured between 10 K and 500 K. Electron spin resonance (ESR) and secondary ion mass spectrometry (SIMS) were used to identify and determine the nitrogen concentrations, which were higher than 1017/cm3. In all the samples examined the Hall measurements indicated impurity band conduction. Therefore, the temperature dependence of the resistivity has been used to derive an activation energy el. The value of el found to be in the range of 0.032–0.025 eV. The observed decrease in activation energy has been correlated with an increase in nitrogen concentration. The presence of substantial nitrogen leads to impurity band conduction and it is the most likely reason for the conflicting values reported for the dominant donor ionization energy by Hall and PL measurements.

Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing

2006 ◽  
Vol 527-529 ◽  
pp. 987-990 ◽  
Author(s):  
Tsunenobu Kimoto ◽  
H. Kawano ◽  
Masato Noborio ◽  
Jun Suda ◽  
Hiroyuki Matsunami
Keyword(s):  
Breakdown Strength ◽  
Oxide Thickness ◽  
Interface State ◽  
State Density ◽  
Interface Properties ◽  
Gate Oxides ◽  
Channel Mobility ◽  
Oxide Deposition ◽  
Mos Structures

Oxide deposition followed by high-temperature annealing in N2O has been investigated to improve the quality of 4H-SiC MOS structures. Annealing of deposited oxides in N2O at 1300oC significantly enhances the breakdown strength and decreases the interface state density to 3x1011 cm-2eV-1 at EC – 0.2 eV. As a result, high channel mobility of 34 cm2/Vs and 52 cm2/Vs has been attained for inversion-type MOSFETs fabricated on 4H-SiC(0001)Si and (000-1)C faces, respectively. The channel mobility shows a maximum when the increase of oxide thickness during N2O annealing is approximately 5 nm. A lateral RESURF MOSFET with gate oxides formed by the proposed process has blocked 1450 V and showed a low on-resistance of 75 mcm2, which is one of the best performances among lateral SiC MOSFETs reported.

Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature

2011 ◽  
Vol 679-680 ◽  
pp. 445-448 ◽  
Author(s):  
Muneharu Kato ◽  
Yuichiro Nanen ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
High Temperature ◽  
Thermal Oxidation ◽  
Field Effect ◽  
Secondary Ion Mass Spectrometry ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Gate Oxides ◽  
Secondary Ion ◽  
Improved Characteristics ◽  
Peak Value

Post-oxidation annealing (POA) in Ar at high temperature has been performed during fabrication of 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). The gate oxides were formed by thermal oxidation followed by N2O annealing, then annealed in Ar for 30 min or 5 h at 1300 °C. The results of Secondary Ion Mass Spectrometry (SIMS) measurements indicated that the C atoms accumulated at the SiO2/SiC interface by thermal oxidation diffused during the 5h-Ar annealing. The characteristics of n-channel MOSFETs were improved and the peak value of field effect mobility was increased to 33 cm2/Vs from 19 cm2/Vs by extending the Ar annealing time.

Epitaxial Growth And Electronic Characterization Of Carboncontaining Silicon-Based Heterostructures

1998 ◽  
Vol 533 ◽  
Author(s):  
J. L. Hoyt ◽  
T. O. Mitchell ◽  
K. Rim ◽  
D. V. Singh ◽  
J. F. Gibbons
Keyword(s):  
Conduction Band ◽  
Secondary Ion Mass Spectrometry ◽  
Early Stage ◽  
Compressive Strain ◽  
Chemical Vapor ◽  
Total Carbon ◽  
Atomic Percent ◽  
Energy Splitting ◽  
Strained Si ◽  
Band Energy

AbstractEpitaxial Si1-x-yGexCy and Si1-yCy layers grown on Si are opening up new possibilities for bandstructure engineering of electronic devices. Thin Si1-yCy layers containing a few atomic percent substitutional carbon, grown on Si substrates, experience biaxial tensile strain, which produces a conduction band energy splitting that is expected to be favorable for in-plane electron transport. For other applications, C may be useful as a means of compensating the compressive strain of Ge in ternary Si1-x-yGexCy alloys. Although the understanding of the electronic properties of these materials is still at an early stage, interesting trends are emerging.A key issue for synthesis of these alloys is the low equilibrium solubility of carbon in silicon. However, a number of non-equilibrium methods have been employed to grow these materials. This work focuses on the properties of Si1-yCy and Si1-x-yGexCy grown by chemical vapor deposition. There is a strong influence of the growth conditions on the fraction of the total carbon concentration which is substitutional on the silicon lattice. Using low temperatures (e.g. 550°C) and very high silane partial pressures for Si1-yCy growth, good agreement is obtained between the carbon contents determined by x-ray diffraction and secondary ion mass spectrometry, for carbon concentrations up to about 1.8 atomic percent. Metal-oxidesemiconductor capacitors fabricated on Si1-x-yGexCy and Si/Si1-yCy epitaxial layers show wellbehaved electrical characteristics. Temperature dependent capacitance-voltage analysis is used to extract the band offsets, and indicates that the conduction band energy is lowered as carbon is added to Si. Complementary to the case of strained Si1-xGex grown on Si, for which most of the energy offset is in the valence band, the band offset appears primarily in the conduction band for Si1-yCy/Si heterojunctions.

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