Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/

2000 ◽  
Vol 21 (7) ◽  
pp. 341-343 ◽  
Author(s):  
Y.H. Wu ◽  
M.Y. Yang ◽  
A. Chin ◽  
W.J. Chen ◽  
C.M. Kwei
Keyword(s):  
Gate Dielectric ◽  
Oxide Thickness ◽  
Electrical Characteristics ◽  
Equivalent Oxide Thickness ◽  
High Quality

Electrical Characteristics of TaOxNy for High-k MOS Gate Dielectric Applications

2000 ◽  
Vol 611 ◽  
Author(s):  
Kiju Im ◽  
Hyungsuk Jung ◽  
Sanghun Jeon ◽  
Dooyoung Yang ◽  
Hyunsang Hwang
Keyword(s):  
Electron Spectroscopy ◽  
Gate Dielectric ◽  
Tantalum Oxide ◽  
Charge Trapping ◽  
Oxide Thickness ◽  
Electrical Characteristics ◽  
Equivalent Oxide Thickness ◽  
Ammonia Treatment ◽  
High K ◽  
Mos Gate

ABSTRACTIn this paper, we report a process for the preparation of high quality amorphous tantalum oxynitride (TaOxNy) via ammonia annealing of Ta2O5 followed by wet reoxidation for use in gate dielectric applications. Compared with tantalum oxide(Ta2O5), a significant improvement in the dielectric constant was obtained by the ammonia treatment followed by light reoxidation in a wet ambient. We confirmed nitrogen incorporation in the tantalum oxynitride (TaOxNy) by Auger Electron Spectroscopy. By optimizing the nitridation and reoxidation process, we obtained an equivalent oxide thickness of less than 1.6nm and a leakage current of less than 10mA/cm2 at -1.5V. Compared with NH3 nitridation, nitridation of Ta2O5 in ND3 improve charge trapping and charge-to-breakdown characteristics of tantalum oxynitride.

Electrical Characteristics of Crystalline Gd2O3 Film on Si (111): Impacts of Growth Temperature and Post Deposition Annealing

2010 ◽  
Vol 1252 ◽  
Author(s):  
Gang Niu ◽  
Bertrand Vilquin ◽  
Nicolas Baboux ◽  
Guillaume Saint-Girons ◽  
Carole Plossu ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Defect Density ◽  
Oxide Thickness ◽  
Electrical Characteristics ◽  
Equivalent Oxide Thickness ◽  
Optimal Temperature ◽  
Post Deposition Annealing ◽  
High K ◽  
Electrical Characterizations ◽  
Post Deposition

AbstractThis work reports on the epitaxial growth of crystalline high-k Gd2O3 on Si (111) by Molecular Beam Epitaxy (MBE) for CMOS gate application. Epitaxial Gd2O3 films of different thicknesses have been deposited on Si (111) between 650°C~750°C. Electrical characterizations reveal that the sample grown at the optimal temperature (700°C) presents an equivalent oxide thickness (EOT) of 0.73nm with a leakage current density of 3.6×10-2 A/cm2 at |Vg-VFB|=1V. Different Post deposition Annealing (PDA) treatments have been performed for the samples grown under optimal condition. The Gd2O3 films exhibit good stability and the PDA process can effectively reduce the defect density in the oxide layer, which results in higher performances of the Gd2O3/Si (111) capacitor.

Study on ZrO2 Deposited Directly on Si as an Alternative Gate Dielectric Material

1999 ◽  
Vol 606 ◽  
Author(s):  
Wen-Jie Qi ◽  
Renee Nieh ◽  
Byoung Hun Lee ◽  
Youngjoo Jeon ◽  
Laegu Kang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Dielectric Material ◽  
Oxide Thickness ◽  
Amorphous Structure ◽  
Flat Band ◽  
Equivalent Oxide Thickness ◽  
Low Leakage ◽  
Quantum Mechanical Effects

AbstractReactive-magnetron-sputtered ZrO2 thin film has been deposited on Si directly for gate dielectric application. Both structural and electrical properties of the ZrO2 film have been investigated. An amorphous structure for 30Å ZrO2 and a semi-amorphous structure for 200Å ZrO2 have been revealed. The sputtered film shows a good stoichiometry and a good structural stability of ZrO2 based on the X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy data. Thin equivalent oxide thickness of about 11.5Å was obtained without the consideration of quantum mechanical effects. A low leakage of less than 10−2 A/cm2 at ±1V relative to the flat band voltage was obtained for this 11.5Å equivalent oxide thickness Pt/ZrO2/Si structure. High effective dielectric breakdown and superior reliability properties have been demonstrated for ZrO2 gate dielectric.

High Quality Ultra Thin CVD Si3N4Gate Dielectrics Fabricated By Rapid Thermal Process

1999 ◽  
Vol 567 ◽  
Author(s):  
S. C. Song ◽  
H. F. Luan ◽  
M. Gardner ◽  
J. Fulford ◽  
M. Allen ◽  
...  
Keyword(s):  
Thermal Process ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Complete Suppression ◽  
Gate Leakage Current ◽  
Equivalent Oxide Thickness ◽  
Rapid Thermal Process ◽  
Electrical Stress ◽  
Boron Penetration

ABSTRACTIn this paper, we report performance and reliability of CMOS devices with ultra thin (<20Å) Si3N4gate dielectric fabricated by in-situ rapid thermal CVD (RTCVD) process, and compare with control SiO2devices of identical equivalent oxide thickness (Tox,eq). Ultra thin CVD Si3N4 devices show significantly lower gate leakage current, complete suppression of boron penetration, improved MOSFET performance, and enhanced reliability against electrical stress.

High temperature (1000 °C) compatible Y–La–Si–O silicate gate dielectric in direct contact with Si with 7.7 Å equivalent oxide thickness

2011 ◽  
Vol 98 (25) ◽  
pp. 252901 ◽  
Author(s):  
C. Dubourdieu ◽  
E. Cartier ◽  
J. Bruley ◽  
M. Hopstaken ◽  
M. M. Frank ◽  
...  
Keyword(s):  
High Temperature ◽  
Direct Contact ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness

A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric

2011 ◽  
Vol 88 (7) ◽  
pp. 1309-1311 ◽  
Author(s):  
C.H. Fu ◽  
K.S. Chang-Liao ◽  
Y.A. Chang ◽  
Y.Y. Hsu ◽  
T.H. Tzeng ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Gate Leakage Current ◽  
Equivalent Oxide Thickness ◽  
Gate Leakage ◽  
High K ◽  
High K Gate Dielectric
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