Silicon Membrane Studies of Point Defect Transport Kinetics During Thermal Oxidation

1986 ◽  
Vol 77 ◽  
Author(s):  
S. T. Ahn ◽  
J. D. Shott ◽  
W. A. Tiller
Keyword(s):  
Point Defect ◽  
Thermal Oxidation ◽  
Transport Kinetics ◽  
Silicon Membrane ◽  
Czochralski Silicon ◽  
Float Zone ◽  
Interstitial Transport ◽  
Silicon Membranes ◽  
Bulk Effect

ABSTRACTSelf-interstitial transport kinetics in float-zone and Czochralski silicon was studied during thermal oxidation of silicon membranes. Bulk recombination of interstitials is higher in the CZ than in the FZ silicon. The low apparent interstitial diffusivity obtained in this study is explained by a bulk effect.

The Effect of HCl on Silicon Point Defect Formation During Thermal Oxidatign of (100) Float Zone Silicon Wafers: A Theoretical Analysis

1986 ◽  
Vol 71 ◽  
Author(s):  
Seajin Oh ◽  
W.A. Tiller ◽  
Soo Kap Hahin
Keyword(s):  
Theoretical Analysis ◽  
Partition Coefficient ◽  
Point Defect ◽  
Thermal Oxidation ◽  
Defect Formation ◽  
The Self ◽  
Blocking Layer ◽  
Layer Model ◽  
Float Zone ◽  
Diffusion Technique

AbstractThe effect of HCl in an oxidizing ambient on Si interstitial formation during oxidation has been studied by the buried marker diffusion technique. Adding HCl reduces the self-interstitial flux generated at the oxidation front but it does not completely eliminate it. A uniform blocking layer model predicts fairly well the Cl effect on self-interstitial generation during the thermal oxidation. By reducing the rigidity of the SiO2, Cl incorporation into the SiO2 is strongly proposed to alter the Si interstitial partition coefficient at the interface.

Intrinsic Gettering in Oxygen-Free Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
K. Nauka ◽  
J. Lagowski ◽  
H. C. Gatos
Keyword(s):  
Magnetic Field ◽  
Czochralski Silicon ◽  
Float Zone ◽  
Free Silicon

ABSTRACTWe found that the intrinsic gettering can be effectively realized in oxygen-lean Czochralski silicon grown in a magnetic field as well as in oxygen-free float-zone silicon. The intrinsic gettering has been observed thus far only in oxygen-rich Czochralski silicon and it has been believed to be intimately related to oxygen. We present experimental characteristics of the new intrinsic gettering process, and we propose a model involving outdiffusion and precipitation of silicon interstitials rather than oxygen which is involved in the standard intrinsic gettering.

Point Defect Properties from Metal Diffusion Experiments — What Does the Data Really Tell Us?

1997 ◽  
Vol 469 ◽  
Author(s):  
Srinivasan Chakravarthit ◽  
Scott T. Dunham
Keyword(s):  
Point Defect ◽  
Equilibrium Concentration ◽  
Simulation Software ◽  
Published Data ◽  
Vacancy Diffusion ◽  
Metal Diffusion ◽  
Float Zone ◽  
Equilibrium Concentrations ◽  
Parameter Values ◽  
Carbon Concentrations

Point defect properties, including diffusivities and equilibrium concentrations for both interstitials and vacancies, are commonly extracted from metal diffusion experiments, and these values are widely used in process simulation software. However, in many cases, these parameter values were extracted using oversimplified models which ignore interactions between interstitial and vacancy diffusion mechanisms. Questions about the accuracy of these parameters have come from ab-initio defect calculations which conclude that vacancies diffuse faster than interstitials, in contrast with published reports on metal diffusion which find vacancies diffuse much more slowly than interstitials. We have reanalyzed published data for zinc and platinum diffusion and find that it is possible to match all of the data using fast vacancy diffusivity. The most direct evidence for slow vacancy diffusion (and a high equilibrium concentration) comes from platinum diffusion experiments. However, we are able to reproduce these results with fast V diffusion and carbon/interstitial clustering, using carbon concentrations typical of Czochralski and float zone silicon (1016cm−3). We evaluate the effectiveness of metal diffusion experiments in determining point defect parameters, and find that it is not possible to reliably determine both diffusivities and equilibrium concentrations for both interstitials and vacancies from metal diffusion results.

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments

2005 ◽  
Vol 202 (5) ◽  
pp. 926-930 ◽  
Author(s):  
J. D. Murphy ◽  
A. Giannattasio ◽  
S. Senkader ◽  
R. J. Falster ◽  
P. R. Wilshaw
Keyword(s):  
Nitrogen Transport ◽  
Czochralski Silicon ◽  
Float Zone

The Growth of Oxidation Stacking Faults and the Point Defect Generation at Si ‐ SiO Interface during Thermal Oxidation of Silicon

1981 ◽  
Vol 128 (5) ◽  
pp. 1121-1130 ◽  
Author(s):  
A. Miin‐Ron Lin ◽  
Robert W. Dutton ◽  
Dimitri A. Antoniadis ◽  
William A. Tiller
Keyword(s):  
Point Defect ◽  
Thermal Oxidation ◽  
Stacking Faults ◽  
Defect Generation
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