The effect of an electrical field on the radiation tolerance of float zone and magnetic Czochralski silicon particle detectors

2011 ◽  
Vol 637 (1) ◽  
pp. 95-99 ◽  
Author(s):  
S. Väyrynen ◽  
J. Härkönen ◽  
E. Tuominen ◽  
I. Kassamakov ◽  
E. Tuovinen ◽  
...  
Keyword(s):  
Silicon Particle ◽  
Radiation Tolerance ◽  
Electrical Field ◽  
Particle Detectors ◽  
Czochralski Silicon ◽  
Float Zone

Effect of Hydrogenation on Defect Reactions in Silicon Particle Detectors

2005 ◽  
Vol 108-109 ◽  
pp. 217-222
Author(s):  
L.F. Makarenko ◽  
F.P. Korshunov ◽  
S.B. Lastovski ◽  
Stanislav B. Lastovskii ◽  
N.M. Kazuchits ◽  
...  
Keyword(s):  
Silicon Particle ◽  
Hydrogen Plasma ◽  
Preliminary Treatment ◽  
Radiation Defects ◽  
Particle Detectors ◽  
Annealing Temperatures ◽  
Float Zone ◽  
New Type ◽  
Defect Reactions ◽  
Preliminary Irradiation

The influence of preliminary treatment in hydrogen plasma on elimination of radiation defects and formation of thermal donors has been studied in detector structures made of standard and oxygenated float zone silicon has been studied. A new type of thermal donors has been found in as-treated diodes. These thermal donors are unstable and can be eliminated by heat-treatment at 200-250°C. After irradiation with 3.5 MeV electrons the detectors had been annealed at temperatures of 50-350 °C. It has been found that preliminary hydrogenation at 300 °C leads to disappearance of main vacancy-type radiation defects at lower annealing temperatures. The annealing of hydrogenated and irradiated crystals is accompanied by hydrogen redistribution and formation of hydrogen-related donors. Preliminary irradiation influences on both these processes.

Intrinsic Gettering in Oxygen-Free Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
K. Nauka ◽  
J. Lagowski ◽  
H. C. Gatos
Keyword(s):  
Magnetic Field ◽  
Czochralski Silicon ◽  
Float Zone ◽  
Free Silicon

ABSTRACTWe found that the intrinsic gettering can be effectively realized in oxygen-lean Czochralski silicon grown in a magnetic field as well as in oxygen-free float-zone silicon. The intrinsic gettering has been observed thus far only in oxygen-rich Czochralski silicon and it has been believed to be intimately related to oxygen. We present experimental characteristics of the new intrinsic gettering process, and we propose a model involving outdiffusion and precipitation of silicon interstitials rather than oxygen which is involved in the standard intrinsic gettering.

Qualification of a new supplier for silicon particle detectors

2013 ◽  
Vol 732 ◽  
pp. 74-78 ◽  
Author(s):  
M. Dragicevic ◽  
U. Bartl ◽  
T. Bergauer ◽  
E. Frühwirth ◽  
S. Gamerith ◽  
...  
Keyword(s):  
Silicon Particle ◽  
Particle Detectors

Effect of Hydrogenation on Defect Reactions in Silicon Particle Detectors

2005 ◽  
pp. 217-222
Author(s):  
L.F. Makarenko ◽  
F.P. Korshunov ◽  
S.B. Lastovski ◽  
S.B. Lastovskii ◽  
N.M. Kazuchits ◽  
...  
Keyword(s):  
Silicon Particle ◽  
Particle Detectors ◽  
Defect Reactions

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments

2005 ◽  
Vol 202 (5) ◽  
pp. 926-930 ◽  
Author(s):  
J. D. Murphy ◽  
A. Giannattasio ◽  
S. Senkader ◽  
R. J. Falster ◽  
P. R. Wilshaw
Keyword(s):  
Nitrogen Transport ◽  
Czochralski Silicon ◽  
Float Zone

Defect characterization in silicon particle detectors irradiated with Li ions

2006 ◽  
Vol 53 (2) ◽  
pp. 589-594 ◽  
Author(s):  
M. Scaringella ◽  
D. Menichelli ◽  
A. Candelori ◽  
R. Rando ◽  
M. Bruzzi
Keyword(s):  
Silicon Particle ◽  
Defect Characterization ◽  
Particle Detectors

Interdefect charge exchange in silicon particle detectors at cryogenic temperatures

2002 ◽  
Vol 49 (4) ◽  
pp. 1750-1755 ◽  
Author(s):  
B. MacEvoy ◽  
A. Santocchia ◽  
G. Hall ◽  
F. Moscatelli ◽  
D. Passeri ◽  
...  
Keyword(s):  
Charge Exchange ◽  
Silicon Particle ◽  
Cryogenic Temperatures ◽  
Particle Detectors
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