The Growth of Oxidation Stacking Faults and the Point Defect Generation at Si ‐ SiO Interface during Thermal Oxidation of Silicon

1981 ◽  
Vol 128 (5) ◽  
pp. 1121-1130 ◽  
Author(s):  
A. Miin‐Ron Lin ◽  
Robert W. Dutton ◽  
Dimitri A. Antoniadis ◽  
William A. Tiller
Keyword(s):  
Point Defect ◽  
Thermal Oxidation ◽  
Stacking Faults ◽  
Defect Generation

Point Defect Injection Kinetics by N2O Oxidation of Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
C. Tsamis ◽  
D. N. Kouvatsos ◽  
D. Tsoukalas
Keyword(s):  
Point Defect ◽  
High Temperatures ◽  
Point Defects ◽  
Silicon Substrate ◽  
Oxidation Process ◽  
Stacking Faults ◽  
Defect Injection ◽  
Dry Oxidation ◽  
Kinetics Of

ABSTRACTThe influence of N2O oxidation of silicon on the kinetics of point defects at high temperatures is investigated. Oxidation Stacking Faults (OSF) are used to monitor the interstitials that are generated during the oxidation process. We show that at high temperatures (1050°-1150°C) the supersaturation of self-interstitials in the silicon substrate is enhanced when oxidation is performed in an N2O ambient compared to 100% dry oxidation. This behavior is attributed to the presence of nitrogen at the oxidizing interface. However, at lower temperatures this phenomenon is reversed and oxidation in N2O ambient leads to reduced supersaturation ratios.

Point‐defect generation during oxidation of silicon in dry oxygen. I. Theory

1986 ◽  
Vol 59 (7) ◽  
pp. 2541-2550 ◽  
Author(s):  
Scott T. Dunham ◽  
James D. Plummer
Keyword(s):  
Point Defect ◽  
Defect Generation

Point defect generation in pulsed impure solids

1976 ◽  
Vol 30 (3) ◽  
pp. 183-184
Author(s):  
J. S. Koehler
Keyword(s):  
Point Defect ◽  
Defect Generation
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