Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments

J. D. Murphy; A. Giannattasio; S. Senkader; R. J. Falster; P. R. Wilshaw

doi:10.1002/pssa.200460532

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments

physica status solidi (a) ◽

10.1002/pssa.200460532 ◽

2005 ◽

Vol 202 (5) ◽

pp. 926-930 ◽

Cited By ~ 11

Author(s):

J. D. Murphy ◽

A. Giannattasio ◽

S. Senkader ◽

R. J. Falster ◽

P. R. Wilshaw

Keyword(s):

Nitrogen Transport ◽

Czochralski Silicon ◽

Float Zone

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Intrinsic Gettering in Oxygen-Free Silicon

MRS Proceedings ◽

10.1557/proc-36-175 ◽

1984 ◽

Vol 36 ◽

Cited By ~ 1

Author(s):

K. Nauka ◽

J. Lagowski ◽

H. C. Gatos

Keyword(s):

Magnetic Field ◽

Czochralski Silicon ◽

Float Zone ◽

Free Silicon

ABSTRACTWe found that the intrinsic gettering can be effectively realized in oxygen-lean Czochralski silicon grown in a magnetic field as well as in oxygen-free float-zone silicon. The intrinsic gettering has been observed thus far only in oxygen-rich Czochralski silicon and it has been believed to be intimately related to oxygen. We present experimental characteristics of the new intrinsic gettering process, and we propose a model involving outdiffusion and precipitation of silicon interstitials rather than oxygen which is involved in the standard intrinsic gettering.

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The effect of an electrical field on the radiation tolerance of float zone and magnetic Czochralski silicon particle detectors

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/j.nima.2011.02.033 ◽

2011 ◽

Vol 637 (1) ◽

pp. 95-99 ◽

Cited By ~ 1

Author(s):

S. Väyrynen ◽

J. Härkönen ◽

E. Tuominen ◽

I. Kassamakov ◽

E. Tuovinen ◽

...

Keyword(s):

Silicon Particle ◽

Radiation Tolerance ◽

Electrical Field ◽

Particle Detectors ◽

Czochralski Silicon ◽

Float Zone

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Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in n-Type Float Zone and Czochralski Silicon

ECS Meeting Abstracts ◽

10.1149/ma2009-02/22/1950 ◽

2009 ◽

Keyword(s):

Electrical Characterization ◽

Subsequent Annealing ◽

Czochralski Silicon ◽

Float Zone ◽

Proton Implantation

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Radiation Response of Forward Biased Float Zone and Magnetic Czochralski Silicon Detectors of Different Geometry for 1-MeV Neutron Equivalent Fluence Monitoring

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2010.2077652 ◽

2010 ◽

Cited By ~ 1

Author(s):

Julien Mekki ◽

Michael Moll ◽

Maurice Glaser ◽

Laurent Dusseau ◽

Frédéric Saigne ◽

...

Keyword(s):

Radiation Response ◽

Silicon Detectors ◽

Czochralski Silicon ◽

Float Zone

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Comparison between swirl-type defects in float-zone and those in czochralski silicon single crystals

Kristall und Technik ◽

10.1002/crat.19780130515 ◽

1978 ◽

Vol 13 (5) ◽

pp. 553-560 ◽

Cited By ~ 1

Author(s):

B. Jakowlew ◽

W. Jeske ◽

J. Weyher

Keyword(s):

Single Crystals ◽

Czochralski Silicon ◽

Float Zone

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Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/j.nima.2003.11.018 ◽

2004 ◽

Vol 518 (1-2) ◽

pp. 346-348 ◽

Cited By ~ 22

Author(s):

J. Härkönen ◽

E. Tuovinen ◽

P. Luukka ◽

E. Tuominen ◽

K. Lassila-Perini ◽

...

Keyword(s):

Low Energy ◽

Radiation Hardness ◽

Czochralski Silicon ◽

Float Zone

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Silicon Membrane Studies of Point Defect Transport Kinetics During Thermal Oxidation

MRS Proceedings ◽

10.1557/proc-77-393 ◽

1986 ◽

Vol 77 ◽

Author(s):

S. T. Ahn ◽

J. D. Shott ◽

W. A. Tiller

Keyword(s):

Point Defect ◽

Thermal Oxidation ◽

Transport Kinetics ◽

Silicon Membrane ◽

Czochralski Silicon ◽

Float Zone ◽

Interstitial Transport ◽

Silicon Membranes ◽

Bulk Effect

ABSTRACTSelf-interstitial transport kinetics in float-zone and Czochralski silicon was studied during thermal oxidation of silicon membranes. Bulk recombination of interstitials is higher in the CZ than in the FZ silicon. The low apparent interstitial diffusivity obtained in this study is explained by a bulk effect.

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