The Effect of HCl on Silicon Point Defect Formation During Thermal Oxidatign of (100) Float Zone Silicon Wafers: A Theoretical Analysis

1986 ◽  
Vol 71 ◽  
Author(s):  
Seajin Oh ◽  
W.A. Tiller ◽  
Soo Kap Hahin
Keyword(s):  
Theoretical Analysis ◽  
Partition Coefficient ◽  
Point Defect ◽  
Thermal Oxidation ◽  
Defect Formation ◽  
The Self ◽  
Blocking Layer ◽  
Layer Model ◽  
Float Zone ◽  
Diffusion Technique

AbstractThe effect of HCl in an oxidizing ambient on Si interstitial formation during oxidation has been studied by the buried marker diffusion technique. Adding HCl reduces the self-interstitial flux generated at the oxidation front but it does not completely eliminate it. A uniform blocking layer model predicts fairly well the Cl effect on self-interstitial generation during the thermal oxidation. By reducing the rigidity of the SiO2, Cl incorporation into the SiO2 is strongly proposed to alter the Si interstitial partition coefficient at the interface.

Silicon Membrane Studies of Point Defect Transport Kinetics During Thermal Oxidation

1986 ◽  
Vol 77 ◽  
Author(s):  
S. T. Ahn ◽  
J. D. Shott ◽  
W. A. Tiller
Keyword(s):  
Point Defect ◽  
Thermal Oxidation ◽  
Transport Kinetics ◽  
Silicon Membrane ◽  
Czochralski Silicon ◽  
Float Zone ◽  
Interstitial Transport ◽  
Silicon Membranes ◽  
Bulk Effect

ABSTRACTSelf-interstitial transport kinetics in float-zone and Czochralski silicon was studied during thermal oxidation of silicon membranes. Bulk recombination of interstitials is higher in the CZ than in the FZ silicon. The low apparent interstitial diffusivity obtained in this study is explained by a bulk effect.

Energetics of point defect formation in Ni3Al

2002 ◽  
Vol 46 (1) ◽  
pp. 37-41 ◽  
Author(s):  
Hannes Schweiger ◽  
Olga Semenova ◽  
Walter Wolf ◽  
Wolfgang Püschl ◽  
Wolfgang Pfeiler ◽  
...  
Keyword(s):  
Point Defect ◽  
Defect Formation

Point Defect Properties from Metal Diffusion Experiments — What Does the Data Really Tell Us?

1997 ◽  
Vol 469 ◽  
Author(s):  
Srinivasan Chakravarthit ◽  
Scott T. Dunham
Keyword(s):  
Point Defect ◽  
Equilibrium Concentration ◽  
Simulation Software ◽  
Published Data ◽  
Vacancy Diffusion ◽  
Metal Diffusion ◽  
Float Zone ◽  
Equilibrium Concentrations ◽  
Parameter Values ◽  
Carbon Concentrations

Point defect properties, including diffusivities and equilibrium concentrations for both interstitials and vacancies, are commonly extracted from metal diffusion experiments, and these values are widely used in process simulation software. However, in many cases, these parameter values were extracted using oversimplified models which ignore interactions between interstitial and vacancy diffusion mechanisms. Questions about the accuracy of these parameters have come from ab-initio defect calculations which conclude that vacancies diffuse faster than interstitials, in contrast with published reports on metal diffusion which find vacancies diffuse much more slowly than interstitials. We have reanalyzed published data for zinc and platinum diffusion and find that it is possible to match all of the data using fast vacancy diffusivity. The most direct evidence for slow vacancy diffusion (and a high equilibrium concentration) comes from platinum diffusion experiments. However, we are able to reproduce these results with fast V diffusion and carbon/interstitial clustering, using carbon concentrations typical of Czochralski and float zone silicon (1016cm−3). We evaluate the effectiveness of metal diffusion experiments in determining point defect parameters, and find that it is not possible to reliably determine both diffusivities and equilibrium concentrations for both interstitials and vacancies from metal diffusion results.

Point defect formation near the epitaxial Ge(001) growth surface and the impact on phosphorus doping activation

2021 ◽  
Vol 130 (12) ◽  
pp. 125702
Author(s):  
Anurag Vohra ◽  
Geoffrey Pourtois ◽  
Roger Loo ◽  
Wilfried Vandervorst
Keyword(s):  
Point Defect ◽  
Defect Formation ◽  
Growth Surface ◽  
Phosphorus Doping ◽  
The Impact

scholarly journals On the ab initio calculation of vibrational formation entropy of point defect: the case of the silicon vacancy

2017 ◽  
Vol 8 ◽  
pp. 85505 ◽  
Author(s):  
Pia Seeberger ◽  
Julien Vidal
Keyword(s):  
Point Defect ◽  
First Principles ◽  
Defect Formation ◽  
Finite Size ◽  
Direct Calculation ◽  
Finite Size Effects ◽  
Numerical Errors ◽  
Silicon Vacancy ◽  
Size Dependent ◽  
Very High

Formation entropy of point defects is one of the last crucial elements required to fully describe the temperature dependence of point defect formation. However, while many attempts have been made to compute them for very complicated systems, very few works have been carried out such as to assess the different effects of finite size effects and precision on such quantity. Large discrepancies can be found in the literature for a system as primitive as the silicon vacancy. In this work, we have proposed a systematic study of formation entropy for silicon vacancy in its 3 stable charge states: neutral, +2 and –2 for supercells with size not below 432 atoms. Rationalization of the formation entropy is presented, highlighting importance of finite size error and the difficulty to compute such quantities due to high numerical requirement. It is proposed that the direct calculation of formation entropy of VSi using first principles methods will be plagued by very high computational workload (or large numerical errors) and finite size dependent results.

scholarly journals Self-realisation, self-actualisation and self-efficacy concepts theoretical analysis

2021 ◽  
Vol 27 (2) ◽  
pp. 7-15
Author(s):  
Tatyana Petrovna Opekina ◽  
Natalya Sergeevna Shipova
Keyword(s):  
Comparative Analysis ◽  
Theoretical Analysis ◽  
Goal Setting ◽  
Self Efficacy ◽  
Theoretical Study ◽  
The Self ◽  
Social Orientation ◽  
Similarities And Differences ◽  
The Individual ◽  
External Forces

This article presents the results of a theoretical study of self-realisation, self-actualisation and self-efficacy phenomena. The main aspects of understanding and correlating these phenomena in classical and modern Russian and foreign psychology are described. The highlighted concepts related to the phenomenon of self-realisation, both in the field of psychology and pedagogy. The similarities and differences of the self-realisation, self-actualisation, self-efficacy phenomena, as well as their correlation and comparison are presented. A comparative analysis of the studied concepts is given. According to the results of the theoretical analysis, the processes of self-realisation and self-actualisation are based on the inner motivation of a person to grow, develop personality, realise its potential. Both of these processes, due to their subjectivity, are difficult to observe and measure from the outside. We have highlighted the main differences, consisting in a greater awareness and orderliness of the process of self-realisation, as well as its predominantly "social" orientation, while self-actualisation is often associated with the struggle with external forces, the desire for self-realisation is rather approved and supported by the society. The concepts of self-realisation and self-efficacy are united by their inherent representation in the external plane of the life of the individual, as well as awareness, activity, goal-setting, and an orientation towards achieving success. In contrast to self-efficacy, self-release is a process rather than a sustainable phenomenon, and can be expressed both externally and internally through a connection with the value-semantic, motivational spheres of the individual.

scholarly journals The representation features of the personal experience substructures of students with different self-concept profiles

2019 ◽  
Vol 32 (2) ◽  
pp. 30-35
Author(s):  
P. Sevostianov
Keyword(s):  
Theoretical Analysis ◽  
Personal Experience ◽  
Self Regulation ◽  
Well Being ◽  
The Self ◽  
Negative Evaluation ◽  
Self Concept ◽  
General Level ◽  
Individual Experience ◽  
Self Perception

 The article is devoted to the substructures of the personal component of individual experience research. In the framework of theoretical analysis, the structural organization of individual experience is reviewed. The author's position consists in sticking to the O.M. Laktionov three-component model of the experience. During the theoretical analysis contemporary studies devoted to the study of individual experience are reviewed. Several substructures of the personal component of individual experience, that require attentive study, are defined. The self-concept notion is analyzed. For the first time, an analysis of the features of relationship between the feeling of self-concept well-being and the personal experience substructures are presented. The analysis, described in this article, is a continuation of the research, which devoted to the study of self-concept in the framework of the structure of the students` personal component of individual experience, during which on the basis of analysis the substructures of personal experience formation features the self-concept profiles were received. Four self-concept profiles were taken into consideration out of the results of the study: the "Conflict profile": persons for whom the simultaneous inclusion of the prosperous and problematic types of self-perception is inherent; "Prosperous profile": persons for whom the prosperous self-concept perception, that combines with low level of problem self-concept perception, is inherent; "Tendency to well-being": persons who are characterized by the tendency to decrease the negative evaluation of their self-concept, having the average indicators of their self-concept well-being; "Tendency to conflict": individuals, who are characterized by average indicators of their self-concept perception in a problematic context in a tendency to decrease the assessment of their self-concept well-being. Directly in the course of the work, described in the article, a comparative analysis of students with different profiles was performed, that was based on the degree of representation of individual experience personal component substructures. The comparison was made using the rank criterion of Kruskal-Wallis. During the comparison, the following results were obtained: for the students with different self-concept profiles was not revealed any differences in the indicators of self-esteem, neuroticism, extraversion, cooperation, conscientiousness, planning self-regulation, self-regulation flexibility, goal purpose in life orientation, and such values as conformance, traditions, kindness, universality and security. Openness to experience, modeling, results estimation, independence, general level of self-regulation, process and result orientation, locus of control myself, general life meaningfulness and independence as a value were the most expressive for students with a prosperous self-concept profile, and the least expressive – for students with a conflict profile and profile with a tendency to conflict. Programming, as well as the stimulation, achievement and power values were the most expressive for the students with a tendency to a prosperous self-perception. The locus of life control and hedonism as the value was found the most expressive among the students with a tendency to a conflict in their own self-perception; the least expressive it was for students with a prosperous profile.

On minimum of static breakdown voltage for gas-filled gap

2021 ◽  
pp. 59-64
Author(s):  
A.V. Kozyrev ◽  
◽  
V.Yu. Kozhevnikov ◽  
A.O. Kokovin ◽  
S.Y. Medvedev ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Electric Field ◽  
Breakdown Voltage ◽  
Spherical Geometry ◽  
The Self ◽  
Planar Geometry ◽  
Plane Parallel ◽  
Discharge Gap

Based on the self-sustaining condition of the discharge, a theoretical analysis was carried out in order to identify the minimum possible breakdown voltage. It is shown that a weak nonuniformity of the electric field in the discharge gap leads to an increase in the static breakdown voltage in comparison with the Paschen’s law. A strong nonuniformity of the field in diodes of coaxial and spherical geometry also cannot provide a decrease in the minimum breakdown voltage in comparison with the case of a plane-parallel gap. It is proved that of all symmetric geometries of a gas-filled diode, the planar geometry has the lowest breakdown voltage.

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