Effect of HCl on silicon point defect formation during thermal oxidation of (100) float zone silicon wafers

1986 ◽  
Vol 48 (17) ◽  
pp. 1125-1126 ◽  
Author(s):  
Seajin Oh ◽  
W. A. Tiller ◽  
SooKap Hahn
Keyword(s):  
Point Defect ◽  
Thermal Oxidation ◽  
Defect Formation ◽  
Silicon Wafers ◽  
Float Zone

The Effect of HCl on Silicon Point Defect Formation During Thermal Oxidatign of (100) Float Zone Silicon Wafers: A Theoretical Analysis

1986 ◽  
Vol 71 ◽  
Author(s):  
Seajin Oh ◽  
W.A. Tiller ◽  
Soo Kap Hahin
Keyword(s):  
Theoretical Analysis ◽  
Partition Coefficient ◽  
Point Defect ◽  
Thermal Oxidation ◽  
Defect Formation ◽  
The Self ◽  
Blocking Layer ◽  
Layer Model ◽  
Float Zone ◽  
Diffusion Technique

AbstractThe effect of HCl in an oxidizing ambient on Si interstitial formation during oxidation has been studied by the buried marker diffusion technique. Adding HCl reduces the self-interstitial flux generated at the oxidation front but it does not completely eliminate it. A uniform blocking layer model predicts fairly well the Cl effect on self-interstitial generation during the thermal oxidation. By reducing the rigidity of the SiO2, Cl incorporation into the SiO2 is strongly proposed to alter the Si interstitial partition coefficient at the interface.

Silicon Membrane Studies of Point Defect Transport Kinetics During Thermal Oxidation

1986 ◽  
Vol 77 ◽  
Author(s):  
S. T. Ahn ◽  
J. D. Shott ◽  
W. A. Tiller
Keyword(s):  
Point Defect ◽  
Thermal Oxidation ◽  
Transport Kinetics ◽  
Silicon Membrane ◽  
Czochralski Silicon ◽  
Float Zone ◽  
Interstitial Transport ◽  
Silicon Membranes ◽  
Bulk Effect

ABSTRACTSelf-interstitial transport kinetics in float-zone and Czochralski silicon was studied during thermal oxidation of silicon membranes. Bulk recombination of interstitials is higher in the CZ than in the FZ silicon. The low apparent interstitial diffusivity obtained in this study is explained by a bulk effect.

Surface and bulk point defect generation in Czochralski and float zone type silicon wafers

1996 ◽  
Vol 68 (15) ◽  
pp. 2085-2087 ◽  
Author(s):  
Wingra T. C. Fang ◽  
Tilden T. Fang ◽  
Peter B. Griffin ◽  
James D. Plummer
Keyword(s):  
Point Defect ◽  
Silicon Wafers ◽  
Defect Generation ◽  
Type Silicon ◽  
Float Zone

Energetics of point defect formation in Ni3Al

2002 ◽  
Vol 46 (1) ◽  
pp. 37-41 ◽  
Author(s):  
Hannes Schweiger ◽  
Olga Semenova ◽  
Walter Wolf ◽  
Wolfgang Püschl ◽  
Wolfgang Pfeiler ◽  
...  
Keyword(s):  
Point Defect ◽  
Defect Formation

Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

2019 ◽  
Vol 8 (1) ◽  
pp. P35-P40 ◽  
Author(s):  
Haruo Sudo ◽  
Kozo Nakamura ◽  
Susumu Maeda ◽  
Hideyuki Okamura ◽  
Koji Izunome ◽  
...  
Keyword(s):  
Point Defect ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Defect Reaction

Point Defect Properties from Metal Diffusion Experiments — What Does the Data Really Tell Us?

1997 ◽  
Vol 469 ◽  
Author(s):  
Srinivasan Chakravarthit ◽  
Scott T. Dunham
Keyword(s):  
Point Defect ◽  
Equilibrium Concentration ◽  
Simulation Software ◽  
Published Data ◽  
Vacancy Diffusion ◽  
Metal Diffusion ◽  
Float Zone ◽  
Equilibrium Concentrations ◽  
Parameter Values ◽  
Carbon Concentrations

Point defect properties, including diffusivities and equilibrium concentrations for both interstitials and vacancies, are commonly extracted from metal diffusion experiments, and these values are widely used in process simulation software. However, in many cases, these parameter values were extracted using oversimplified models which ignore interactions between interstitial and vacancy diffusion mechanisms. Questions about the accuracy of these parameters have come from ab-initio defect calculations which conclude that vacancies diffuse faster than interstitials, in contrast with published reports on metal diffusion which find vacancies diffuse much more slowly than interstitials. We have reanalyzed published data for zinc and platinum diffusion and find that it is possible to match all of the data using fast vacancy diffusivity. The most direct evidence for slow vacancy diffusion (and a high equilibrium concentration) comes from platinum diffusion experiments. However, we are able to reproduce these results with fast V diffusion and carbon/interstitial clustering, using carbon concentrations typical of Czochralski and float zone silicon (1016cm−3). We evaluate the effectiveness of metal diffusion experiments in determining point defect parameters, and find that it is not possible to reliably determine both diffusivities and equilibrium concentrations for both interstitials and vacancies from metal diffusion results.

Point defect formation near the epitaxial Ge(001) growth surface and the impact on phosphorus doping activation

2021 ◽  
Vol 130 (12) ◽  
pp. 125702
Author(s):  
Anurag Vohra ◽  
Geoffrey Pourtois ◽  
Roger Loo ◽  
Wilfried Vandervorst
Keyword(s):  
Point Defect ◽  
Defect Formation ◽  
Growth Surface ◽  
Phosphorus Doping ◽  
The Impact

scholarly journals On the ab initio calculation of vibrational formation entropy of point defect: the case of the silicon vacancy

2017 ◽  
Vol 8 ◽  
pp. 85505 ◽  
Author(s):  
Pia Seeberger ◽  
Julien Vidal
Keyword(s):  
Point Defect ◽  
First Principles ◽  
Defect Formation ◽  
Finite Size ◽  
Direct Calculation ◽  
Finite Size Effects ◽  
Numerical Errors ◽  
Silicon Vacancy ◽  
Size Dependent ◽  
Very High

Formation entropy of point defects is one of the last crucial elements required to fully describe the temperature dependence of point defect formation. However, while many attempts have been made to compute them for very complicated systems, very few works have been carried out such as to assess the different effects of finite size effects and precision on such quantity. Large discrepancies can be found in the literature for a system as primitive as the silicon vacancy. In this work, we have proposed a systematic study of formation entropy for silicon vacancy in its 3 stable charge states: neutral, +2 and –2 for supercells with size not below 432 atoms. Rationalization of the formation entropy is presented, highlighting importance of finite size error and the difficulty to compute such quantities due to high numerical requirement. It is proposed that the direct calculation of formation entropy of VSi using first principles methods will be plagued by very high computational workload (or large numerical errors) and finite size dependent results.

Sign in / Sign up

Export Citation Format

Share Document