Effects of Pre-Gate Oxidation Cleaning and Gettering Upon The Very Thin Oxide Integrity

1986 ◽  
Vol 71 ◽  
Author(s):  
J. Lee ◽  
C. Y. Tung ◽  
S. Hahn ◽  
P. Chiao
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Gate Oxide ◽  
The Other ◽  
Time Dependent ◽  
Cleaning Process ◽  
Oxygen Precipitation ◽  
Other Hand ◽  
Thin Gate Oxide

AbstractVarious pre-gate oxide cleaning and gettering techniques on the integrity of thin gate oxide were investigated. A 100 Å thick oxide capacitor was used to study its time-dependent breakdown characteristics and minority carrier lifetime. It has been shown that the oxide integrity as measured by time-dependent breakdown and the minority carrier lifetime are very sensitive to the cleaning technique. On the other hand, given adequate cleaning process, different intrinsic gettering schemes may only influence the oxygen precipitation, as well as the minority carrier lifetime, but not the oxide integrity.

Effects of Pre-Gate Oxidation Intrinsic Gettering Upon Thin Gate Oxide Integrity In High Carbon Content CZ Si

1987 ◽  
Vol 105 ◽  
Author(s):  
S. Hahn ◽  
C. Y. Tung ◽  
J. Lee ◽  
T. Tuomi ◽  
J. Partanen
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Gate Oxide ◽  
High Carbon ◽  
High Carbon Content ◽  
Carbon Impurity ◽  
Oxygen Precipitation ◽  
Bulk Oxygen ◽  
Thin Gate Oxide

AbstractEffects of post-well drive intrinsic gettering (PWIG) upon the integrity of thin gate oxide in Cz Si wafers with carbon levels, Cs, ranged from 0.2 - ∼ 4 ppma were investigated. A 10 nm thick gate oxide capacitor was used to study its time-dependent breakdown characteristics and minority carrier lifetime. Our data have shown that PWIG cycles and/or carbon impurity affect both bulk oxygen precipitation and minority carrier lifetime, but not the oxide integrity.

Effect of Annealing Temperature on the Properties of Silicon Crystal

2011 ◽  
Vol 415-417 ◽  
pp. 1323-1326 ◽  
Author(s):  
Qiu Yan Hao ◽  
Xin Jian Xie ◽  
Bing Zhang Wang ◽  
Cai Chi Liu
Keyword(s):  
Annealing Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Silicon Crystal ◽  
Minority Carrier Lifetime ◽  
Interstitial Oxygen ◽  
Oxygen Precipitation ◽  
Oxygen Donor ◽  
Infrared Spectrometer ◽  
Effect Of Oxygen

In order to investigate the performance of silicon single crystal depended on the annealing temperature, the minority carrier lifetime, the resistivity and oxygen concentration after different temperature annealing in Ar ambient were examined. And the effect of oxygen and related defects formed during annealed on the minority carrier lifetime were analyzed by microwave photoconductivity method, Fourier transform infrared spectrometer and four-probe measurement. The results indicate that after 450°C annealing for 30h, the resistivity and minority carrier lifetime of silicon increase significantly, while the concentration of interstitial oxygen decreases. After the annealing at 650°C, oxygen donor can be removed and the resistivity and the minority carrier lifetime decrease. During the high-temperature (above 650°C) annealing, the oxygen precipitation can decrease the minority carrier lifetime silicon.

Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide

2015 ◽  
Vol 821-823 ◽  
pp. 351-354 ◽  
Author(s):  
Hussein M. Ayedh ◽  
Roberta Nipoti ◽  
Anders Hallén ◽  
Bengt Gunnar Svensson
Keyword(s):  
Cooling Rate ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Temperature Treatment ◽  
The Other ◽  
High Temperature Treatment ◽  
Isothermal Treatment ◽  
Equilibrium Conditions ◽  
Carbon Vacancy

The carbon vacancy (VC) is a minority carrier lifetime controlling defect in 4H-SiC and it is formed during high temperature treatment. In this study, we have performed heat treatment on two sets of n-type 4H-SiC epitaxial samples. The first set was isothermally treated at 1850 °C to follow the evolution of VCas a function of time. The VCconcentration is not affected by changing the duration. Samples of the other set were treated at 1950 °C for 10 min, but with different cooling rates and a reduction of the VCconcentration was indeed demonstrated by lowering the cooling rate. The VCconcentration in the slow-cooled sample is about 2 times less than in the fast-cooled one, reflecting a competition between equilibrium conditions and the cooling rate.

Gate oxide integrity and minority‐carrier lifetime correlated with Si wafer polish damage

1987 ◽  
Vol 51 (1) ◽  
pp. 54-56 ◽  
Author(s):  
J. Lee ◽  
C.‐C. D. Wong ◽  
C. Y. Tung ◽  
W. Lee Smith ◽  
S. Hahn ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Gate Oxide ◽  
Si Wafer ◽  
Gate Oxide Integrity

Interaction Between Deposited Film Extrinsic Gettering and Intrinsic Gettering in CZ Silicon During Simulated CMOS Process Cycles

1985 ◽  
Vol 59 ◽  
Author(s):  
S. Hahn ◽  
C.-C. D. Wong ◽  
F. A. Ponce ◽  
Z. U. Rek
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Gate Oxide ◽  
Cmos Process ◽  
Mos Capacitors ◽  
Oxide Breakdown ◽  
Deposited Film

ABSTRACTThe gettering effectiveness of various thin film structures on n-type CZ silicon wafers has been investigated using electron microscopy, synchrotron radiation topography and optical techniques. Polysilicon, silicon nitride, and poly/nitride films were deposited on etched wafer backsurfaces. The various materials characteristics were correlated with gate oxide breakdown voltage, minority carrier lifetime and yield of MOS capacitors. These studies show that the poly/nitride configuration is superior as a gettering technique.

On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
J. Vanhellemont ◽  
A. Kaniava ◽  
M. Libezny ◽  
E. Simoen ◽  
G. Kissinger ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Defect Density ◽  
Minority Carrier Lifetime ◽  
Excitation Level ◽  
Lattice Defects ◽  
Recombination Activity ◽  
Extended Defect ◽  
Oxygen Precipitation ◽  
Complementary Techniques

AbstractThe recombination activity of oxygen precipitation related lattice defects in p- and n-type silicon is studied with photoluminescence (PL) and microwave absorption (MWA) techniques. A direct correlation is observed between the amount of precipitated oxygen and the extended defect density on one hand and the minority carrier lifetime and PL activity on the other hand. The PL analyses show as dominant features in the spectra the Dl and D2 lines. The relative amplitude of the D-lines in the different samples is investigated as a function of the oxygen content, defect density and excitation level. The results are correlated with those of complementary techniques and are interrelated on the basis of Shockley-Read-Hall (SRH) theory.

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission
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