Gate oxide integrity and minority‐carrier lifetime correlated with Si wafer polish damage

1987 ◽  
Vol 51 (1) ◽  
pp. 54-56 ◽  
Author(s):  
J. Lee ◽  
C.‐C. D. Wong ◽  
C. Y. Tung ◽  
W. Lee Smith ◽  
S. Hahn ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Gate Oxide ◽  
Si Wafer ◽  
Gate Oxide Integrity

Effects of Pre-Gate Oxidation Cleaning and Gettering Upon The Very Thin Oxide Integrity

1986 ◽  
Vol 71 ◽  
Author(s):  
J. Lee ◽  
C. Y. Tung ◽  
S. Hahn ◽  
P. Chiao
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Gate Oxide ◽  
The Other ◽  
Time Dependent ◽  
Cleaning Process ◽  
Oxygen Precipitation ◽  
Other Hand ◽  
Thin Gate Oxide

AbstractVarious pre-gate oxide cleaning and gettering techniques on the integrity of thin gate oxide were investigated. A 100 Å thick oxide capacitor was used to study its time-dependent breakdown characteristics and minority carrier lifetime. It has been shown that the oxide integrity as measured by time-dependent breakdown and the minority carrier lifetime are very sensitive to the cleaning technique. On the other hand, given adequate cleaning process, different intrinsic gettering schemes may only influence the oxygen precipitation, as well as the minority carrier lifetime, but not the oxide integrity.

Contactless Evaluation Of The Stress In X-Ray Mask Wafers (SiN/Si) Using A Laser/Microwave Method.

1993 ◽  
Vol 306 ◽  
Author(s):  
Masatoshi Oda ◽  
Akira Usami ◽  
Takahisa Nakai ◽  
Akira Ito ◽  
Masaya Ichimura ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Microwave Method ◽  
Carrier Injection ◽  
X Ray ◽  
Semiconductor Laser Diode ◽  
Membrane Fabrication ◽  
Microwave System ◽  
Si Wafer

AbstractHighly accurate X-ray masks are strongly required to establish SR lithography technology. X-ray masks must be produced as accurately as the LSI devices, because a one-toone projection aligner system is used. To minimize the in-plane mask distortion, it is desirable to estimate the value of the stress and the non-uniformity in the membrane fabrication (SiN) process. The values of the stress were estimated from the measurement of the warpage and the calculation. It is very difficult to obtain the stress distribution in the SiN/Si wafer. Thus, we measured the minority carrier lifetime distribution using the non-contact laser/microwave method. The carrier injection was done by a 774nm or 904nm semiconductor laser diode, and their beam was focused to about 500 μmφ. The surface lifetime, τ s, of the SiN/Si wafer with the stress over ˜ 108dyn/cm2 decreased to 60–70% of that of the bare Si wafer. Thus, the contactless laser/microwave system can be adaptable for the characterization in the X-ray mask process.

Effects of Pre-Gate Oxidation Intrinsic Gettering Upon Thin Gate Oxide Integrity In High Carbon Content CZ Si

1987 ◽  
Vol 105 ◽  
Author(s):  
S. Hahn ◽  
C. Y. Tung ◽  
J. Lee ◽  
T. Tuomi ◽  
J. Partanen
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Gate Oxide ◽  
High Carbon ◽  
High Carbon Content ◽  
Carbon Impurity ◽  
Oxygen Precipitation ◽  
Bulk Oxygen ◽  
Thin Gate Oxide

AbstractEffects of post-well drive intrinsic gettering (PWIG) upon the integrity of thin gate oxide in Cz Si wafers with carbon levels, Cs, ranged from 0.2 - ∼ 4 ppma were investigated. A 10 nm thick gate oxide capacitor was used to study its time-dependent breakdown characteristics and minority carrier lifetime. Our data have shown that PWIG cycles and/or carbon impurity affect both bulk oxygen precipitation and minority carrier lifetime, but not the oxide integrity.

scholarly journals Light-Induced Passivation of Si by Iodine Ethanol Solution

2008 ◽  
Vol 1123 ◽  
Author(s):  
Bhushan Sopori ◽  
Przemyslaw Rupnowski ◽  
Jesse Appel ◽  
Debraj Guhabiswas ◽  
LaTecia Anderson-Jackson
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Ethanol Solution ◽  
Experimental Results ◽  
Material Parameters ◽  
Laboratory Conditions ◽  
Wafer Cleaning ◽  
Normal Laboratory ◽  
Si Wafer

AbstractWe report on our observations of light-activated passivation (LIP) of Si surfaces by iodine-ethanol (I-E) solution. Based on our experimental results, the mechanism of passivation appears to be related to dissociation of iodine by the photo-carriers injected from the Si wafer into the I-E solution. The ionized iodine (I−) then participates in the formation of a Si-ethoxylate bond that passivates the Si surface. Experiments with a large number of wafers of different material parameters indicate that under normal laboratory conditions, LIP can be observed only in some samples–samples that have moderate minority-carrier lifetime. We explain this observation and also show that wafer cleaning plays an extremely important role in passivation.

Interaction Between Deposited Film Extrinsic Gettering and Intrinsic Gettering in CZ Silicon During Simulated CMOS Process Cycles

1985 ◽  
Vol 59 ◽  
Author(s):  
S. Hahn ◽  
C.-C. D. Wong ◽  
F. A. Ponce ◽  
Z. U. Rek
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Gate Oxide ◽  
Cmos Process ◽  
Mos Capacitors ◽  
Oxide Breakdown ◽  
Deposited Film

ABSTRACTThe gettering effectiveness of various thin film structures on n-type CZ silicon wafers has been investigated using electron microscopy, synchrotron radiation topography and optical techniques. Polysilicon, silicon nitride, and poly/nitride films were deposited on etched wafer backsurfaces. The various materials characteristics were correlated with gate oxide breakdown voltage, minority carrier lifetime and yield of MOS capacitors. These studies show that the poly/nitride configuration is superior as a gettering technique.

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission

scholarly journals Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Marked Enhancement
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