On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
J. Vanhellemont ◽  
A. Kaniava ◽  
M. Libezny ◽  
E. Simoen ◽  
G. Kissinger ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Defect Density ◽  
Minority Carrier Lifetime ◽  
Excitation Level ◽  
Lattice Defects ◽  
Recombination Activity ◽  
Extended Defect ◽  
Oxygen Precipitation ◽  
Complementary Techniques

AbstractThe recombination activity of oxygen precipitation related lattice defects in p- and n-type silicon is studied with photoluminescence (PL) and microwave absorption (MWA) techniques. A direct correlation is observed between the amount of precipitated oxygen and the extended defect density on one hand and the minority carrier lifetime and PL activity on the other hand. The PL analyses show as dominant features in the spectra the Dl and D2 lines. The relative amplitude of the D-lines in the different samples is investigated as a function of the oxygen content, defect density and excitation level. The results are correlated with those of complementary techniques and are interrelated on the basis of Shockley-Read-Hall (SRH) theory.

Effects of Pre-Gate Oxidation Cleaning and Gettering Upon The Very Thin Oxide Integrity

1986 ◽  
Vol 71 ◽  
Author(s):  
J. Lee ◽  
C. Y. Tung ◽  
S. Hahn ◽  
P. Chiao
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Gate Oxide ◽  
The Other ◽  
Time Dependent ◽  
Cleaning Process ◽  
Oxygen Precipitation ◽  
Other Hand ◽  
Thin Gate Oxide

AbstractVarious pre-gate oxide cleaning and gettering techniques on the integrity of thin gate oxide were investigated. A 100 Å thick oxide capacitor was used to study its time-dependent breakdown characteristics and minority carrier lifetime. It has been shown that the oxide integrity as measured by time-dependent breakdown and the minority carrier lifetime are very sensitive to the cleaning technique. On the other hand, given adequate cleaning process, different intrinsic gettering schemes may only influence the oxygen precipitation, as well as the minority carrier lifetime, but not the oxide integrity.

The Heteroepitaxy and Characterization of Inp and GaInP on Silicon for Solar Cell Applications

1990 ◽  
Vol 198 ◽  
Author(s):  
M.M. Al-Jassim ◽  
R.K. Ahrenkiel ◽  
M.W. Wanlass ◽  
J.M. Olson ◽  
S.M. Vernon
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Defect Density ◽  
Minority Carrier Lifetime ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
Si Substrates ◽  
Threading Dislocation Density ◽  
Direct Growth

ABSTRACTInP and GaInP layers were heteroepitaxially grown on (100) Si substrates by atmospheric pressure MOCVD. TEM and photoluminescence (PL) were used to measure the defect density and the minority carrier lifetime in these structures. The direct growth of InP on Si resulted in either polycrystalline or heavily faulted single-crystal layers. The use of GaAs buffer layers in InP/Si structures gave rise to significantly improved morphology and reduced the threading dislocation density. The best InP/Si layers in this study were obtained by using GaAs-GaInAs graded buffers. Additionally, the growth of high quality GaInP on Si was demonstrated. The minority carrier lifetime of 7 ns in these layers is the highest of any III-V/Si semiconductor measured in our laboratory.

Effect of Annealing Temperature on the Properties of Silicon Crystal

2011 ◽  
Vol 415-417 ◽  
pp. 1323-1326 ◽  
Author(s):  
Qiu Yan Hao ◽  
Xin Jian Xie ◽  
Bing Zhang Wang ◽  
Cai Chi Liu
Keyword(s):  
Annealing Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Silicon Crystal ◽  
Minority Carrier Lifetime ◽  
Interstitial Oxygen ◽  
Oxygen Precipitation ◽  
Oxygen Donor ◽  
Infrared Spectrometer ◽  
Effect Of Oxygen

In order to investigate the performance of silicon single crystal depended on the annealing temperature, the minority carrier lifetime, the resistivity and oxygen concentration after different temperature annealing in Ar ambient were examined. And the effect of oxygen and related defects formed during annealed on the minority carrier lifetime were analyzed by microwave photoconductivity method, Fourier transform infrared spectrometer and four-probe measurement. The results indicate that after 450°C annealing for 30h, the resistivity and minority carrier lifetime of silicon increase significantly, while the concentration of interstitial oxygen decreases. After the annealing at 650°C, oxygen donor can be removed and the resistivity and the minority carrier lifetime decrease. During the high-temperature (above 650°C) annealing, the oxygen precipitation can decrease the minority carrier lifetime silicon.

Mobility-Lifetime Products in a-Si:H and the Dangling Bond Recombination Model

1992 ◽  
Vol 258 ◽  
Author(s):  
E. Morgado
Keyword(s):  
Fermi Level ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Defect Density ◽  
Minority Carrier Lifetime ◽  
Localized States ◽  
Correlated Electrons ◽  
Recombination Model ◽  
Model Equations ◽  
Determinant Factor

ABSTRACTFermi level and light intensity dependences of electron and hole lifetimes have been calculated using a recombination model which considers positively correlated dangling bonds as the only localized states in the gap. The model equations have been solved numerically taking into account the non-equilibrium statistics of correlated electrons and the Fermi level dependence of the defect density. The results are in agreement with the anticorrelated behavior of the majority' and minority carrier μτ products observed in a-Si:H. The majority carrier lifetime is found to be more sensitive to the photogeneration rate than the minority carrier lifetime. The position of the Fermi level with respect to the energies of the D° and D- centers in the gap is a determinant factor of the (°τ)e/(μτ)h ratio.

Effects of Pre-Gate Oxidation Intrinsic Gettering Upon Thin Gate Oxide Integrity In High Carbon Content CZ Si

1987 ◽  
Vol 105 ◽  
Author(s):  
S. Hahn ◽  
C. Y. Tung ◽  
J. Lee ◽  
T. Tuomi ◽  
J. Partanen
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Gate Oxide ◽  
High Carbon ◽  
High Carbon Content ◽  
Carbon Impurity ◽  
Oxygen Precipitation ◽  
Bulk Oxygen ◽  
Thin Gate Oxide

AbstractEffects of post-well drive intrinsic gettering (PWIG) upon the integrity of thin gate oxide in Cz Si wafers with carbon levels, Cs, ranged from 0.2 - ∼ 4 ppma were investigated. A 10 nm thick gate oxide capacitor was used to study its time-dependent breakdown characteristics and minority carrier lifetime. Our data have shown that PWIG cycles and/or carbon impurity affect both bulk oxygen precipitation and minority carrier lifetime, but not the oxide integrity.

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission
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