Improvement of silicon wafer minority carrier lifetime through the implementation of a pre-thermal donor anneal cleaning process

2002 ◽  
Author(s):  
L. Martines ◽  
C. Wang ◽  
T. Hardenburger ◽  
N. Barker ◽  
B. Sohmers
Keyword(s):  
Silicon Wafer ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Cleaning Process ◽  
Thermal Donor

Effects of Pre-Gate Oxidation Cleaning and Gettering Upon The Very Thin Oxide Integrity

1986 ◽  
Vol 71 ◽  
Author(s):  
J. Lee ◽  
C. Y. Tung ◽  
S. Hahn ◽  
P. Chiao
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Gate Oxide ◽  
The Other ◽  
Time Dependent ◽  
Cleaning Process ◽  
Oxygen Precipitation ◽  
Other Hand ◽  
Thin Gate Oxide

AbstractVarious pre-gate oxide cleaning and gettering techniques on the integrity of thin gate oxide were investigated. A 100 Å thick oxide capacitor was used to study its time-dependent breakdown characteristics and minority carrier lifetime. It has been shown that the oxide integrity as measured by time-dependent breakdown and the minority carrier lifetime are very sensitive to the cleaning technique. On the other hand, given adequate cleaning process, different intrinsic gettering schemes may only influence the oxygen precipitation, as well as the minority carrier lifetime, but not the oxide integrity.

Influences of Phosphorous Gettering on Minority Carrier Lifetime Distribution of Polycrystalline Silicon Wafer

2012 ◽  
Vol 569 ◽  
pp. 229-232
Author(s):  
Shi Hui Ma ◽  
Cai Zhe Hao ◽  
Xian Jiang
Keyword(s):  
Silicon Wafer ◽  
Polycrystalline Silicon ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Metal Elements ◽  
Pn Junction ◽  
Junction Formation ◽  
Defects And Impurities ◽  
Impurities And Defects

The influences of the phosphorus gettering in PN junction formation on the distribution of minority carrier lifetime of polycrystalline silicon wafer in solar cell production process were studied. The experimental results shows that the distribution of internal defects and impurities in polycrystalline silicon wafer significantly impact on the effectiveness of the phosphorus gettering during preparation of PN junction through the phosphorus diffusion technology. Especially when the impurities were transition metal elements, it caused a large difference of the phosphorus gettering effectiveness in PN junction preparation, which was due to the presence and interaction of defects and impurities on polycrystalline silicon wafer, such as grain boundaries, dislocations, oxygen and carbon, and other metal elements. In addition, the uneven distribution of impurities and defects of also influenced the phosphorus gettering effectiveness.

scholarly journals Surface Passivation of Crystalline Silicon Wafer Using H2S Gas

2021 ◽  
Vol 11 (8) ◽  
pp. 3527
Author(s):  
Jian Lin ◽  
Hongsub Jee ◽  
Jangwon Yoo ◽  
Junsin Yi ◽  
Chaehwan Jeong ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Photoelectron Spectroscopy ◽  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Annealing Treatment ◽  
Minority Carrier Lifetime ◽  
Wafer Surface ◽  
Sulfur Passivation

We report the effects of H2S passivation on the effective minority carrier lifetime of crystalline silicon (c-Si) wafers. c-Si wafers were thermally annealed under an H2S atmosphere at various temperatures. The initial minority carrier lifetime (6.97 μs) of a c-Si wafer without any passivation treatments was also measured for comparison. The highest minority carrier lifetime gain of 2030% was observed at an annealing temperature of 600 °C. The X-ray photoelectron spectroscopy analysis revealed that S atoms were bonded to Si atoms after H2S annealing treatment. This indicates that the increase in minority carrier lifetime originating from the effect of sulfur passivation on the silicon wafer surface involves dangling bonds.

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission

scholarly journals Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Marked Enhancement
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