Magnetron Enhanced Reactive Ion Etching in a Hexode System

1986 ◽  
Vol 68 ◽  
Author(s):  
Scott Bell ◽  
Thijs Bril
Keyword(s):  
Magnetic Field ◽  
Uniform Magnetic Field ◽  
Reactive Ion Etching ◽  
Ion Bombardment ◽  
Ion Flux ◽  
Ion Etching ◽  
Resulting Effect ◽  
Bombardment Energy

AbstractA method of forming a uniform magnetic field in a modified hexode type etch system is described.Experimental results of etching Si, SiO2 and photoresist with NF3 are presented.The magnetic field effectively increases the ion flux and decreases the energy of the ions bombarding the cathode.It was found that adding a magnetic field increases the etchrate of Si for the conditions studied, but for SiO2 and photoresist, the decreased ion bombardment energy leads to lower etchrates under certain conditions.The resulting effect on selectivities is discussed.

Reactive ion etching of Al alloy and silicon dioxide films in a rotating magnetic field

1994 ◽  
Author(s):  
Masafumi Tanabe ◽  
Akio Matsuda ◽  
Takeshi Sunada ◽  
Taro Nomura ◽  
Hideki Fujimoto ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Silicon Dioxide ◽  
Reactive Ion Etching ◽  
Rotating Magnetic Field ◽  
Al Alloy ◽  
Ion Etching ◽  
Silicon Dioxide Films

Magnetic field-assisted finishing for micropore X-ray focusing mirrors fabricated by deep reactive ion etching

CIRP Annals ◽  
2010 ◽  
Vol 59 (1) ◽  
pp. 351-354 ◽  
Author(s):  
H. Yamaguchi ◽  
R.E. Riveros ◽  
I. Mitsuishi ◽  
U. Takagi ◽  
Y. Ezoe ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
X Ray

Profile Simulation of Reactive Ion Etching for Silicon Tip-on-Post and Bottle-Neck Structures in Fed Applications

1997 ◽  
Vol 471 ◽  
Author(s):  
A. R. Zoulkarneev ◽  
J. M. Kim ◽  
J. P. Hong ◽  
J. H. Choi ◽  
V. V. Michine
Keyword(s):  
Angular Distribution ◽  
Field Emission ◽  
Analytical Study ◽  
Reactive Ion Etching ◽  
Ion Flux ◽  
Experimental Results ◽  
Ion Etching ◽  
Temporal Profile ◽  
Silicon Structures ◽  
Bottle Neck

ABSTRACTThis articles describes an investigation of the reactive ion etching of tip-on-post and bottle-neck silicon structures used for fabrication field emission devices. The analytical study for the angular distribution of incident etching ions is presented by the simulation with temporal profile evolution. The surface simulations are compared with experimental results. This comparison shows that numerical expression for the angular distribution could be applied for incident ion flux in case tip-on-post and bottle-neck silicon structures.

The Role of F Atoms in the Reactive Sputter Etching of Silicon Dioxide: Langmuir Probe and Optical Actinometry Measurements

1986 ◽  
Vol 76 ◽  
Author(s):  
C H. Steinbrüchel ◽  
B. J. Curtis
Keyword(s):  
Silicon Dioxide ◽  
Langmuir Probe ◽  
Constant Pressure ◽  
Reactive Ion Etching ◽  
Ion Flux ◽  
The Other ◽  
Ion Fluxes ◽  
Ion Etching ◽  
Sputter Etching

ABSTRACTReactive sputter etching of SiO2 in a low-pressure CF4 -O2 plasma has been investigated using a Langmuir probe to determine ion fluxes to the substrate and optical actinometry to monitor the concentration of F atoms, [F]. Etch yields Y, i.e. the number of substrate atoms removed per impinging ion, are obtained vs O2 composition and vs pressure. At constant pressure Y decreases slightly, but [F] increases considerably, with increasing O2 content. On the other hand, at constant O2 composition both Y and [F] increase strongly with increasing pressure. These results suggest that at low [F], relative to the ion flux to the substrate, the dominant etch mechanism is direct reactive ion etching, with the ions themselves as the main reactants, whereas at high [F] the overall etching is ion-enhanced, with F atoms as the main neutral reactants.

The Role of Oxygen In the CF2Cl2 Reactive Ion Etching of Pecvd Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Yue Kuo
Keyword(s):  
Etch Rate ◽  
Reactive Ion Etching ◽  
Extensive Study ◽  
Surface Chemical ◽  
Ion Etching ◽  
Chemical States ◽  
Plasma Phase ◽  
Bombardment Energy ◽  
Phase Chemistry

ABSTRACTAn extensive study on 02 effects on RIE of PECVD a-Si:H and SiNx has been carried out. Mixtures of CF2Cl2/HCI and CF2Cl2/CF3Cl were used as base gases. The addition of O2 into these gases changed the film etch rate and etch selectivity in different ways. Process results were interpreted by examining the plasma phase chemistry, the ion bombardment energy, and ESCA surface chemical states.

Low energy carbon ion bombardment on indium phosphide and its implications for alkane‐based reactive ion etching

1992 ◽  
Vol 71 (11) ◽  
pp. 5623-5628 ◽  
Author(s):  
P. F. A. Meharg ◽  
E. A. Ogryzlo ◽  
I. Bello ◽  
W. M. Lau
Keyword(s):  
Indium Phosphide ◽  
Reactive Ion Etching ◽  
Ion Bombardment ◽  
Low Energy ◽  
Ion Etching ◽  
Carbon Ion

Magnetic Ceramic Films from a Metallopolymer Resist Using Reactive Ion Etching in a Secondary Magnetic Field

2004 ◽  
Vol 16 (4) ◽  
pp. 291-296 ◽  
Author(s):  
S. B. Clendenning ◽  
S. Han ◽  
N. Coombs ◽  
C. Paquet ◽  
M. S. Rayat ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Ceramic Films

Charge Build-Up and Uniformity Control in Magnetically Enhanced Reactive Ion Etching Using a Curved Lateral Magnetic Field

1994 ◽  
Vol 33 (Part 1, No. 4B) ◽  
pp. 2194-2199 ◽  
Author(s):  
Satoshi Nakagawa ◽  
Tomoyuki Sasaki ◽  
Hajime Mori ◽  
Takashi Namura
Keyword(s):  
Magnetic Field ◽  
Reactive Ion Etching ◽  
Ion Etching
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