Profile Simulation of Reactive Ion Etching for Silicon Tip-on-Post and Bottle-Neck Structures in Fed Applications

1997 ◽  
Vol 471 ◽  
Author(s):  
A. R. Zoulkarneev ◽  
J. M. Kim ◽  
J. P. Hong ◽  
J. H. Choi ◽  
V. V. Michine
Keyword(s):  
Angular Distribution ◽  
Field Emission ◽  
Analytical Study ◽  
Reactive Ion Etching ◽  
Ion Flux ◽  
Experimental Results ◽  
Ion Etching ◽  
Temporal Profile ◽  
Silicon Structures ◽  
Bottle Neck

ABSTRACTThis articles describes an investigation of the reactive ion etching of tip-on-post and bottle-neck silicon structures used for fabrication field emission devices. The analytical study for the angular distribution of incident etching ions is presented by the simulation with temporal profile evolution. The surface simulations are compared with experimental results. This comparison shows that numerical expression for the angular distribution could be applied for incident ion flux in case tip-on-post and bottle-neck silicon structures.

50−nm silicon structures fabricated with trilevel electron beam resist and reactive‐ion etching

1981 ◽  
Vol 39 (3) ◽  
pp. 268-270 ◽  
Author(s):  
L. D. Jackel ◽  
R. E. Howard ◽  
E. L. Hu ◽  
D. M. Tennant ◽  
P. Grabbe
Keyword(s):  
Electron Beam ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Silicon Structures

Deep reactive ion etching for lateral field emission devices

2000 ◽  
Vol 21 (6) ◽  
pp. 271-273 ◽  
Author(s):  
V. Milanovic ◽  
L. Doherty ◽  
D.A. Teasdale ◽  
C. Zhang ◽  
S. Parsa ◽  
...  
Keyword(s):  
Field Emission ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Lateral Field ◽  
Deep Reactive Ion Etching ◽  
Field Emission Devices

scholarly journals Особенности согласования нижнего электрода с высокочастотным генератором смещения при реактивно-ионном травлении массивных подложек

2021 ◽  
Vol 91 (4) ◽  
pp. 657
Author(s):  
С.Д. Полетаев ◽  
А.И. Любимов
Keyword(s):  
Numerical Simulation ◽  
Reactive Ion Etching ◽  
Experimental Results ◽  
Substrate Holder ◽  
Rf Power ◽  
Special Design ◽  
Reactive Component ◽  
Lower Electrode ◽  
Ion Etching ◽  
Simulation Results

This paper presents theoretical and experimental results on reactive ion etching of massive substrates in freon-14 with RF bias at the lower electrode. A hypothesis is proposed according to which a large-sized substrate violates the matching of the lower electrode with the RF generator by adding an additional reactive component to the impedance of the lower electrode. A numerical simulation of reactive ion etching with substrates of various sizes in a CF4 environment is performed . The simulation results showed a significant increase in the reactive component of RF power at the lower electrode if the substrate area exceeds 50% of the area of the lower electrode, which is consistent with the proposed hypothesis. It has been experimentally shown that the etching of massive substrates violates the matching of the lower electrode with the RF generator. A special design of the substrate holder for massive substrates has been developed. It is shown that such a substrate holder significantly improves the matching of the RF generator with the lower electrode, especially when adding 0.3-0.9 l/h argon to the plasma-forming mixture.

scholarly journals Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Robert Damian Lawrowski ◽  
Christian Prommesberger ◽  
Christoph Langer ◽  
Florian Dams ◽  
Rupert Schreiner
Keyword(s):  
Aspect Ratio ◽  
Field Emission ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Strong Impact ◽  
Observable Effect ◽  
Ion Etching ◽  
Anisotropic Factor ◽  
The Impact ◽  
Field Emission Arrays

The homogeneity of emitters is very important for the performance of field emission (FE) devices. Reactive-ion etching (RIE) and oxidation have significant influences on the geometry of silicon tips. The RIE influences mainly the anisotropy of the emitters. Pressure has a strong impact on the anisotropic factor. Reducing the pressure results in a higher anisotropy, but the etch rate is also lower. A longer time of etching compensates this effect. Furthermore an improvement of homogeneity was observed. The impact of uprating is quite low for the anisotropic factor, but significant for the homogeneity. At low power the height and undercut of the emitters are more constant over the whole wafer. The oxidation itself is very homogeneous and has no observable effect on further variation of the homogeneity. This modified fabrication process allows solving the problem of inhomogeneity of previous field emission arrays.

The Role of F Atoms in the Reactive Sputter Etching of Silicon Dioxide: Langmuir Probe and Optical Actinometry Measurements

1986 ◽  
Vol 76 ◽  
Author(s):  
C H. Steinbrüchel ◽  
B. J. Curtis
Keyword(s):  
Silicon Dioxide ◽  
Langmuir Probe ◽  
Constant Pressure ◽  
Reactive Ion Etching ◽  
Ion Flux ◽  
The Other ◽  
Ion Fluxes ◽  
Ion Etching ◽  
Sputter Etching

ABSTRACTReactive sputter etching of SiO2 in a low-pressure CF4 -O2 plasma has been investigated using a Langmuir probe to determine ion fluxes to the substrate and optical actinometry to monitor the concentration of F atoms, [F]. Etch yields Y, i.e. the number of substrate atoms removed per impinging ion, are obtained vs O2 composition and vs pressure. At constant pressure Y decreases slightly, but [F] increases considerably, with increasing O2 content. On the other hand, at constant O2 composition both Y and [F] increase strongly with increasing pressure. These results suggest that at low [F], relative to the ion flux to the substrate, the dominant etch mechanism is direct reactive ion etching, with the ions themselves as the main reactants, whereas at high [F] the overall etching is ion-enhanced, with F atoms as the main neutral reactants.

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