The Role of Oxygen In the CF2Cl2 Reactive Ion Etching of Pecvd Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Yue Kuo
Keyword(s):  
Etch Rate ◽  
Reactive Ion Etching ◽  
Extensive Study ◽  
Surface Chemical ◽  
Ion Etching ◽  
Chemical States ◽  
Plasma Phase ◽  
Bombardment Energy ◽  
Phase Chemistry

ABSTRACTAn extensive study on 02 effects on RIE of PECVD a-Si:H and SiNx has been carried out. Mixtures of CF2Cl2/HCI and CF2Cl2/CF3Cl were used as base gases. The addition of O2 into these gases changed the film etch rate and etch selectivity in different ways. Process results were interpreted by examining the plasma phase chemistry, the ion bombardment energy, and ESCA surface chemical states.

Mechanism of Reactive Ion Etching of Polymeric Films in Oxygen-Based Plasmas

1992 ◽  
Vol 282 ◽  
Author(s):  
Sandra W. Graham ◽  
Christoph Steinbrüchel
Keyword(s):  
Etch Rate ◽  
Reactive Ion Etching ◽  
Polymeric Films ◽  
Surface Chemical ◽  
Ion Etching ◽  
Atom Concentration ◽  
Modified Model ◽  
Physical Sputtering ◽  
Low Pressures ◽  
The Relationship

ABSTRACTThe etching of polymeric films in O2 plasmas containing small amounts of CF4 has been studied at low pressures (10–60 mtorr) in an RIE reactor. The relationship between etch rate, ion flux, and O atom concentration is investigated for photoresist, polyimide, and amorphous carbon. The applicability of a surface-chemical model proposed by Joubert, et al. (J. Appl. Phys. 65(12) 1989, 5096) is explored. Modifications to the model are made to include physical sputtering and direct reactive ion etching. The modified model provides an improved description of the process, showing the various contributions of the ions and O atoms to the overall etching.

Reactive Ion Etching Processes for Amorphous Germanium Alloys

1993 ◽  
Vol 316 ◽  
Author(s):  
Yue Kuo
Keyword(s):  
Reactive Ion Etching ◽  
Germanium Oxide ◽  
Plasma Damage ◽  
Silicon Alloys ◽  
Ion Etching ◽  
Amorphous Germanium ◽  
Process Characteristics ◽  
Bombardment Energy ◽  
Phase Chemistry ◽  
Germanium Silicon

ABSTRACTThis paper presents results on reactive ion etching (RIE) processes of amorphous germanium (a-Ge:H), germanium silicon alloys (a-GeSix:H) and germanium oxide (GeOx). Their process characteristics are compared with those of the amorphous silicon (a-Si:H) and silicon nitride (SiNx). Various combinations of feeding gases, i.e., from CF4, CF2Cl2, CH3F, and O2, over a pressure range of 100 to 300 mTorr and a power range of 500 to 1500 W were used in this study. The following conclusions are drawn from the results: 1) the a-Ge:H and a-GeSix:H etch mechanisms are similar to that of a-Si:H, but the former have higher etch rates than the latter; 2) a-GeSix:H etch rate falls between those of a-Ge:H and a-Si:H; 3) the GeOx etch mechanism is similar to that of SiNx; 4) although plasma phase chemistry, ion bombardment energy, and surface reactions are all important to the etch process, the film component selectivity is greatly dependent on the feeding gas; 5) to obtain a high etch selectivity between a-GeSix:H and PECVD SiNx a chlorine-containing gas has to be used; 6) RIE plasma damage to a-Si:H TFT is decreased when it is covered with an a-GeSix:H layer.

The role of surface chemical states on the photocatalytic behavior of all-inorganic mixed halide perovskite nanocrystals

2019 ◽  
Author(s):  
Andrés Fabián Gualdrón-Reyes ◽  
Iván Mora-Seró ◽  
Eliseo Amado-González ◽  
Jorge-Enrique Rueda-P ◽  
Rogelio Ospina ◽  
...  
Keyword(s):  
Surface Chemical ◽  
Perovskite Nanocrystals ◽  
Chemical States ◽  
Halide Perovskite

Reactive Ion Etching of GaSb, (Ai,Ga)Sb, and InAs for Novel Device Applications.

1990 ◽  
Vol 216 ◽  
Author(s):  
D.C. La Tulipe ◽  
D.J. Frank ◽  
H. Munekata
Keyword(s):  
Etch Rate ◽  
Reactive Ion Etching ◽  
Scanning Electron Micrographs ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Novel Device ◽  
Physical Sputtering ◽  
Chlorine Gas ◽  
Device Applications ◽  
Scanning Electron

ABSTRACT-Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. We have studied the reactive ion etching characteristics of GaSb, (AI,Ga)Sb, and InAs in both methane/ hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH4/H2, the etch rate of (AI,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200Å/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl2 was found to yield anisotropic profiles, with the etch rate of (AI,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to an InAs “stop layer” was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs-channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics.

Study on Reactive Ion Etching of Vanadium Oxide Thin Film by Taguchi Method

2014 ◽  
Vol 909 ◽  
pp. 91-94
Author(s):  
Jun Gou ◽  
Hui Ling Tai ◽  
Jun Wang ◽  
De En Gu ◽  
Xiong Bang Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Taguchi Method ◽  
Vanadium Oxide ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Optimum Process ◽  
Rf Power ◽  
Ion Etching ◽  
Vanadium Oxide Thin Film

A high selectivity patterning technology of vanadium oxide (VOx) thin film was suggested in this paper. VOxthin film was etched through a photoresist (PR) mask using Cl/N based gases in a reactive ion etching (RIE) system. Taguchi method was used for process design to identify factors that influence the patterning and find optimum process parameters. Experimental results suggested that RF power was the largest contribution factor for VOxetch rate, PR selectivity and uniformity on 6 inch diameter wafer. Uniformity and PR selectivity were improved by introducing a small amount of N2. High resolution and low roughness patterning transfer was achieved with a non uniformity of 2.4 %, an VOxetch rate of 74 nm/min, a PR selectivity of 0.96, a Si3N4selectivity of 5 and a SiO2selectivity of 10.

The effect of BCl3 pretreatment on the etching of AlN in Cl2-based plasma

2008 ◽  
Vol 1108 ◽  
Author(s):  
Xiaoyan Xu ◽  
Vladimir Kuryatkov ◽  
Boris Borisov ◽  
Mahesh Pandikunta ◽  
Sergey A Nikishin ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Native Oxide ◽  
Short Exposure ◽  
Ion Etching ◽  
Inductively Coupled ◽  
High Etch Rate

AbstractThe effect of BCl3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AlN is investigated using inductively coupled plasma reactive ion etching. The native AlN oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar plasma. Compared to the chlorine based plasma etching, BCl3/Ar is found to have the highest etch rate for both AlN and its native oxide. Following removal of the native oxide, Cl2/Ar/BCl3 plasma etching with 15% BCl3 fraction results in a high etch rate ˜ 87 nm/min and modest increases in the surface roughness.

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