Magnetic Ceramic Films from a Metallopolymer Resist Using Reactive Ion Etching in a Secondary Magnetic Field

2004 ◽  
Vol 16 (4) ◽  
pp. 291-296 ◽  
Author(s):  
S. B. Clendenning ◽  
S. Han ◽  
N. Coombs ◽  
C. Paquet ◽  
M. S. Rayat ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Ceramic Films

Reactive ion etching of Al alloy and silicon dioxide films in a rotating magnetic field

1994 ◽  
Author(s):  
Masafumi Tanabe ◽  
Akio Matsuda ◽  
Takeshi Sunada ◽  
Taro Nomura ◽  
Hideki Fujimoto ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Silicon Dioxide ◽  
Reactive Ion Etching ◽  
Rotating Magnetic Field ◽  
Al Alloy ◽  
Ion Etching ◽  
Silicon Dioxide Films

Magnetic field-assisted finishing for micropore X-ray focusing mirrors fabricated by deep reactive ion etching

CIRP Annals ◽  
2010 ◽  
Vol 59 (1) ◽  
pp. 351-354 ◽  
Author(s):  
H. Yamaguchi ◽  
R.E. Riveros ◽  
I. Mitsuishi ◽  
U. Takagi ◽  
Y. Ezoe ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
X Ray

Charge Build-Up and Uniformity Control in Magnetically Enhanced Reactive Ion Etching Using a Curved Lateral Magnetic Field

1994 ◽  
Vol 33 (Part 1, No. 4B) ◽  
pp. 2194-2199 ◽  
Author(s):  
Satoshi Nakagawa ◽  
Tomoyuki Sasaki ◽  
Hajime Mori ◽  
Takashi Namura
Keyword(s):  
Magnetic Field ◽  
Reactive Ion Etching ◽  
Ion Etching

scholarly journals The effects of a surface magnetic field on reactive ion etching

1991 ◽  
Vol 69 (1) ◽  
pp. 447-451
Author(s):  
Haewook Han ◽  
Ki‐Woong Whang
Keyword(s):  
Magnetic Field ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Surface Magnetic Field

Magnetron Enhanced Reactive Ion Etching in a Hexode System

1986 ◽  
Vol 68 ◽  
Author(s):  
Scott Bell ◽  
Thijs Bril
Keyword(s):  
Magnetic Field ◽  
Uniform Magnetic Field ◽  
Reactive Ion Etching ◽  
Ion Bombardment ◽  
Ion Flux ◽  
Ion Etching ◽  
Resulting Effect ◽  
Bombardment Energy

AbstractA method of forming a uniform magnetic field in a modified hexode type etch system is described.Experimental results of etching Si, SiO2 and photoresist with NF3 are presented.The magnetic field effectively increases the ion flux and decreases the energy of the ions bombarding the cathode.It was found that adding a magnetic field increases the etchrate of Si for the conditions studied, but for SiO2 and photoresist, the decreased ion bombardment energy leads to lower etchrates under certain conditions.The resulting effect on selectivities is discussed.

Magnetic field enhanced reactive ion etching of polyimide

1984 ◽  
Vol 2 (3) ◽  
pp. 1292-1295 ◽  
Author(s):  
J. T. C. Yeh ◽  
K. R. Grebe ◽  
M. J. Palmer
Keyword(s):  
Magnetic Field ◽  
Reactive Ion Etching ◽  
Ion Etching

scholarly journals Effect of External Magnetic Field on Compact Inductively-coupled Reactive Ion Etching Reactor

2015 ◽  
Vol 58 (10) ◽  
pp. 392-396 ◽  
Author(s):  
Taisei MOTOMURA ◽  
Kazunori TAKAHASHI ◽  
Yuji KASASHIMA ◽  
Fumihiko UESUGI ◽  
Akira ANDO
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Inductively Coupled
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