The deposition of SiOF film with low dielectric constant in a helicon plasma source

1996 ◽  
Vol 68 (11) ◽  
pp. 1507-1509 ◽  
Author(s):  
Jung‐Hyung Kim ◽  
Sang‐Hun Seo ◽  
Seok‐Min Yun ◽  
Hong‐Young Chang ◽  
Kwang‐Man Lee ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Plasma Source ◽  
Low Dielectric Constant ◽  
Helicon Plasma ◽  
Low Dielectric

Plasma Polymerization of Low Dielectric Constant Fluoro-Hydrocarbon Film

1998 ◽  
Vol 544 ◽  
Author(s):  
Wei William Lee ◽  
George Tyndall ◽  
Raymond Zehringer ◽  
Mark Crowder
Keyword(s):  
Dielectric Constant ◽  
Photoelectron Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Low Dielectric Constant ◽  
Ecr Plasma ◽  
Low Dielectric ◽  
High Vapor ◽  
Deposited Films ◽  
Deposition Conditions

AbstractLow dielectric constant fluoro-hydrocarbon polymer films were deposited using an electron cyclotron resonance (ECR) plasma source with pentafluorostyrene as a precursor. The pentafluorostyrene is a cyclic liquid monomer with relative high vapor pressure. The chemical structure of the deposited films were characterized by X-ray photoelectron spectroscopy, infrared spectroscopy and Rutherford backscattering spectroscopy. The structure of deposited films studies gave an insight of the fluorohydrocarbon polymer formation regarding to deposition conditions. The dielectric constant of the film was found in the range of 2.2 to 2.4. The influence of deposition conditions on chemical, physical and electrical properties of the resulting films were evaluated.

Low-Dielectric-Constant-Film Deposition with Various Gases in a Helicon Plasma Reactor

1999 ◽  
Vol 38 (Part 1, No. 7B) ◽  
pp. 4531-4534 ◽  
Author(s):  
Seok-Min Yun ◽  
Hong-Young Chang ◽  
Kyoung-Suk Oh ◽  
Chi-Kyu Choi
Keyword(s):  
Dielectric Constant ◽  
Plasma Reactor ◽  
Film Deposition ◽  
Low Dielectric Constant ◽  
Helicon Plasma ◽  
Low Dielectric

Low dielectric constant CF/SiOF composite film deposition in a helicon plasma reactor

1999 ◽  
Vol 341 (1-2) ◽  
pp. 109-111 ◽  
Author(s):  
Seok-Min Yun ◽  
Hong-Young Chang ◽  
Min-Sung Kang ◽  
Chi-Kyu Choi
Keyword(s):  
Dielectric Constant ◽  
Composite Film ◽  
Plasma Reactor ◽  
Film Deposition ◽  
Low Dielectric Constant ◽  
Helicon Plasma ◽  
Low Dielectric

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

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