Rapid Thermal Processing: A Bibliography

1985 ◽  
Vol 52 ◽  
Author(s):  
R. A. Powell ◽  
M. L. Manion
Keyword(s):  
Thermal Processing ◽  
Beam Energy ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Compound Semiconductors ◽  
Dopant Activation ◽  
Broad Beam ◽  
Device Applications ◽  
And Diffusion

ABSTRACTThis bibliography presents 342 references to work published on rapid thermal processing (RTP) from 1979 through mid-1985. A variety of broad-beam energy sources are represented, including: arc and quartz-halogen lamps, blackbody radiators, strip heaters, broadly rastered electron beams, and defocused CO2 lasers. Citations were obtained by both manual searching and searching of a commercially available computerized data base (I NSPEC). Entries are grouped under 13 topical headings: reviews, implanted dopant activation and diffusion in silicon, polycrystalline silicon, silicides and polycides, metals, dielectrics, compound semiconductors, defects and microstructure, device applications (silicon and compound semiconductors), miscellaneous applications, equipment, and modeling. Within each group, citations are arranged alphabetically by title. A full author index is provided.

A Method for Rapid Thermal Annealing of Compound Semiconductors by Cw CO2 Laser Irradiation

1987 ◽  
Vol 92 ◽  
Author(s):  
U. Neta ◽  
V. Richter ◽  
R. Kalish
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Compound Semiconductors ◽  
Processing Technique ◽  
Absorbing Medium ◽  
Implantation Damage ◽  
Steady State Temperature ◽  
Present Technique ◽  
Simultaneous Heating ◽  
Short Time

ABSTRACTA new Rapid Thermal Processing technique based on heating by irradiation from CO2 laser is presented. It is particularly suitable for thermal treatment of low melting temperature materials such as annealing implantation induced damage in compound semiconductors.Short time heating of the sample is achieved by its contact with a quartz plate heated by photons from a CW CO2 laser. The quartz serves both as an absorbing medium for the radiation and as a proximity cap. Steady state temperature can be obtained by the simultaneous heating of the sample by the laser and its cooling by a jet of N2 gas.The present technique, when applied to ion implanted InSb (TA<450°C, t=10 seconds), leads to removal of the implantation damage which is comparable to that obtained by furnace or flash lamp (Heatpulse™)annealing.

Properties of Gallium Implanted Furnace and Rapidly Annealed Polycrystalline Silicon

1987 ◽  
Vol 92 ◽  
Author(s):  
H.B. Harrison ◽  
A.P. Pogany ◽  
Y. Komem
Keyword(s):  
Electrical Conductivity ◽  
Phase Transformation ◽  
Liquid Phase ◽  
Long Range ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Significant Movement ◽  
Lower Temperature ◽  
Polycrystalline Silicon Films

ABSTRACTPolycrystalline silicon films have been amorphized by implantation with 100keV Ga ions of doses 0.3 and 6×1015cm−2. These films were subsequently recrystallized using either a furnace for longer times lower temperature (∼30 mins, 600° C) or rapid thermal processing (RTP) for shorter times higher temperatures ( ≤ 30 sec, 800° C, 900° C) in an endeavour to suppress any long range movement of the Ga during the anneal phase. It is found that for both the furnace and RTP for temperatures ≤ 800°C no significant movement is observed and that the lower temperature anneal for the highest dose produces the highest electrical conductivity. By contrast however, annealing at 900° C, even though the initial conductivity is higher than for any other anneal we observe a significant reduction with time and extremely rapid movement of the dopant species throughout the original poly layer. An initial rationale for this behaviour is proposed in terms of a liquid phase transformation during annealing.

Rapid Thermal Processing of Silicon Ion Implanted Channel Layers in GaAs

1987 ◽  
Vol 92 ◽  
Author(s):  
Tohru Hara ◽  
Jeffrey C. Gelpey
Keyword(s):  
Surface Quality ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Process Window ◽  
Halogen Lamp ◽  
Dopant Activation ◽  
Superior Surface ◽  
Dc Arc ◽  
Tungsten Halogen Lamp ◽  
Ion Implanted

ABSTRACTThe use of Rapid Thermal Processing (RTP) for the activation of silicon ion implanted channel layers in GaAs MESFET devices has been studied. Tungsten-halogen lamp and Water-wall DC arc lamp RTP have been compared. The arc lamp gave superior abruptness of the carrier concentration profile (78% at 850°C for 15 seconds or 1000°C for 2 seconds) and dopant activation greater than 60%. These parameters are important to achieve good MESFETs fabricated using arc lamp RTP was also studied. The transconductance (gm) of the devices usinq RTP was 78mS/mm which is much higher than achieved with similar samples using furnace annealing. Both capped and capless RTP was examined. Although capped annealing generally yields superior surface quality, the capless annealing provided good electrical properties in a process window which also yielded adequate surface quality and good devices.

In-Situ Fabrication and Process Control Techniques in Rapid Thermal Processing

1991 ◽  
Vol 224 ◽  
Author(s):  
Mehrdad M. Moslehi ◽  
John Kuehne ◽  
Richard Yeakley ◽  
Lino Velo ◽  
Habib Najm ◽  
...  
Keyword(s):  
Process Control ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Rapid Thermal Processing ◽  
Control Techniques ◽  
In Situ Fabrication ◽  
Concurrent Use ◽  
Process Uniformity

AbstractAdvanced rapid thermal processing (RTP) equipment and sensors have been developed for in-situ fabrication of semiconductor devices. High-performance multi-zone lamp modules have been applied to various processes including rapid thermal oxidation (RTO), chemicalvapor deposition (CVD) of tungsten and amorphous/polycrystalline silicon, silicide formation, as well as high-temperature rapid thermal annealing (RTA). Concurrent use of multizone lamps and multi-point temperature sensors allows real-time wafer temperature control and process uniformity optimization. Specific experimental results will be presented on the multi-zone lamp modules, in-situ process control sensors, and single-wafer fabrication processes.

Characteristics of Arsenic Doped Polycrystalline Silicon-Gate Capacitors After Rapid Thermal Processing

1987 ◽  
Vol 106 ◽  
Author(s):  
R. Angelucci ◽  
C. Y. Wong ◽  
J. Y.-C. Sun ◽  
G. Scilla ◽  
P. A. McFarland ◽  
...  
Keyword(s):  
Work Function ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Interface States ◽  
Fixed Charges ◽  
Polysilicon Gate

ABSTRACTThe feasibility and advantages of using rapid thermal annealing to achieve a proper n+ polysilicon work function are demonstrated. Our data shows that RTA can be used to activate arsenic in the polysilicon gate after a regular furnace anneal or to diffuse and activate arsenic without any prior furnace anneal. Interface states and fixed charges due to RTA can be annealed out at 500°C for 30 min in forming gas. New insights into the diffusion, segregation, and activation of As in polysilicon during furnace and/or rapid thermal annealing have been obtained.

Increasing The Conductivity Of Polycrystalline Silicon By Rapid Thermal Processing Before And After Ion Implantation

1986 ◽  
Author(s):  
R. B. Gregory ◽  
S. R. Wilson ◽  
W. M. Paulson ◽  
S. J. Krause ◽  
J. A. Leavitt ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Before And After

Transient Enhanced Diffusion in B+ and P+ Implanted Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
S. J. Pennycook ◽  
R. J. Culbertson
Keyword(s):  
Heat Treatment ◽  
Point Defects ◽  
Diffusion Coefficients ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temperature Dependent ◽  
Enhanced Diffusion ◽  
Thermally Activated ◽  
Transient Enhanced Diffusion ◽  
And Diffusion

AbstractWe report the transient enhanced diffusion of supersaturated phosphorus in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or redissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follows their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactivation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

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