A Method for Rapid Thermal Annealing of Compound Semiconductors by Cw CO2 Laser Irradiation

1987 ◽  
Vol 92 ◽  
Author(s):  
U. Neta ◽  
V. Richter ◽  
R. Kalish
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Compound Semiconductors ◽  
Processing Technique ◽  
Absorbing Medium ◽  
Implantation Damage ◽  
Steady State Temperature ◽  
Present Technique ◽  
Simultaneous Heating ◽  
Short Time

ABSTRACTA new Rapid Thermal Processing technique based on heating by irradiation from CO2 laser is presented. It is particularly suitable for thermal treatment of low melting temperature materials such as annealing implantation induced damage in compound semiconductors.Short time heating of the sample is achieved by its contact with a quartz plate heated by photons from a CW CO2 laser. The quartz serves both as an absorbing medium for the radiation and as a proximity cap. Steady state temperature can be obtained by the simultaneous heating of the sample by the laser and its cooling by a jet of N2 gas.The present technique, when applied to ion implanted InSb (TA<450°C, t=10 seconds), leads to removal of the implantation damage which is comparable to that obtained by furnace or flash lamp (Heatpulse™)annealing.

scholarly journals Rapid Thermal Processing to Enhance Steel Toughness

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
V. K. Judge ◽  
J. G. Speer ◽  
K. D. Clarke ◽  
K. O. Findley ◽  
A. J. Clarke
Keyword(s):  
Mechanical Properties ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Manufacturing Processes ◽  
Tempered Martensite ◽  
Short Time ◽  
Rapid Processing ◽  
Transportation Applications ◽  
Quenching And Tempering ◽  
Rapid Tempering

Abstract Quenching and Tempering (Q&T) has been utilized for decades to alter steel mechanical properties, particularly strength and toughness. While tempering typically increases toughness, a well-established phenomenon called tempered martensite embrittlement (TME) is known to occur during conventional Q&T. Here we show that short-time, rapid tempering can overcome TME to produce unprecedented property combinations that cannot be attained by conventional Q&T. Toughness is enhanced over 43% at a strength level of 1.7 GPa and strength is improved over 0.5 GPa at an impact toughness of 30 J. We also show that hardness and the tempering parameter (TP), developed by Holloman and Jaffe in 1945 and ubiquitous within the field, is insufficient for characterizing measured strengths, toughnesses, and microstructural conditions after rapid processing. Rapid tempering by energy-saving manufacturing processes like induction heating creates the opportunity for new Q&T steels for energy, defense, and transportation applications.

Rapid Thermal Processing and The Quest for Ultra Shallow Boron Junctions

1986 ◽  
Vol 71 ◽  
Author(s):  
Tom Sedgwick
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Attractive Potential ◽  
High Activation ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Diffusion Effects ◽  
Junction Formation ◽  
Short Time

AbstractRapid Thermal Processing (RTP) can minimize processing time and therefore minimize dopant motion during annealing of ion implanted junctions. In spite of the advantage of short time annealing using RTP, the formation of shallow B junctions is thwarted by channeling, transient enhanced diffusion and concentration enhanced diffusion effects all of which lead to deeper B profiles. Channeling and transient enhanced diffusion can be avoided by preamorphizing the silicon before the B implant. However, defects at the original amorphous/crystal boundary persist after annealing. Very low energy B implantation can lead to very shallow dopant profiles and in spite of channeling effects, offers an attractive potential shallow junction technology. In all of the shallow junction formation techniques RTP is required to achieve both high activation of the implanted species and minimal diffusion of the implanted dopant.

Kinetic Studies of Silicon - Silicon Dioxide Interface Trap Annealing Using Rapid Thermal Processing

1985 ◽  
Vol 52 ◽  
Author(s):  
Michael L. Reed ◽  
James D. Plummer
Keyword(s):  
Thermal Processing ◽  
Hydrogen Diffusion ◽  
Rapid Thermal Processing ◽  
Kinetic Studies ◽  
Interface State ◽  
Experimental Methodology ◽  
Annealing Behavior ◽  
Promising Tool ◽  
Short Time ◽  
Kinetics Of

ABSTRACTRapid thermal processing is a promising tool for studying the kinetics of interface state annealing and other process phenomena on short time scales. We have studied the decay of interface states with a variety of ambients, temperatures, and oxide thicknesses. Annealing kinetics appear to be controlled by a surface reaction process, and not hydrogen diffusion through the oxide. The annealing behavior depends strongly on temperature but less so on other process parameters. Our experimental methodology for temporal process modeling is discussed.

Rapid Thermal Processing: A Bibliography

1985 ◽  
Vol 52 ◽  
Author(s):  
R. A. Powell ◽  
M. L. Manion
Keyword(s):  
Thermal Processing ◽  
Beam Energy ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Compound Semiconductors ◽  
Dopant Activation ◽  
Broad Beam ◽  
Device Applications ◽  
And Diffusion

ABSTRACTThis bibliography presents 342 references to work published on rapid thermal processing (RTP) from 1979 through mid-1985. A variety of broad-beam energy sources are represented, including: arc and quartz-halogen lamps, blackbody radiators, strip heaters, broadly rastered electron beams, and defocused CO2 lasers. Citations were obtained by both manual searching and searching of a commercially available computerized data base (I NSPEC). Entries are grouped under 13 topical headings: reviews, implanted dopant activation and diffusion in silicon, polycrystalline silicon, silicides and polycides, metals, dielectrics, compound semiconductors, defects and microstructure, device applications (silicon and compound semiconductors), miscellaneous applications, equipment, and modeling. Within each group, citations are arranged alphabetically by title. A full author index is provided.

Thermal Effects of Gasses in Rapid Thermal Processing

1991 ◽  
Vol 224 ◽  
Author(s):  
K. L. Knutson ◽  
S. A. Campbell ◽  
J. D. Leighton
Keyword(s):  
Steady State ◽  
Numerical Model ◽  
Thermal Processing ◽  
Thermal Effects ◽  
Rapid Thermal Processing ◽  
Radiant Intensity ◽  
Steady State Operation ◽  
Temperature Ramps ◽  
Short Time

AbstractA numerical model has been created for a Rapid Thermal Processing (RTP) system. Experiments have been done to show the validity of the model. The simulations done examine thermal uniformity and stresses incurred by RTP during steady state operation and during short time temperature ramps. It is shown that increasing the radiant intensity at the edge of the wafer reduces stress, compared to a uniform radiant field, in steadystate operation but increases stress during short time temperature ramps.

Si and GexSi1−x Epitaxial Growth on SOI Structures by Rapid Thermal Processing Chemical Vapor Deposition

1991 ◽  
Vol 224 ◽  
Author(s):  
T. Y. Hsieh ◽  
K. H. Jung ◽  
D. L. Kwong ◽  
S. Lin ◽  
H. L. Marcus
Keyword(s):  
High Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Threading Dislocation ◽  
Dislocation Densities ◽  
Short Time ◽  
Defect Densities

AbstractA short time high temperature H2 pre-bake resulted in an undulating SIMOX surface, which planarized after epitaxial growth by rapid thermal processing chemical vapor deposition (RTPCVD). However, a short time, high temperature N2 pre-bake resulted in severe surface pitting. From dilute Schimmel etch results, no significant changes in the defect densities of the Si layers occurred after RTPCVD. Auger depth profiles of the SOI substrate prior to epitaxial growth show an oxygen peak in the SIMOX Si layer. However, the peak flattens out after epitaxial growth. Oxygen was not observed in the epitaxial film, even though oxygen was still observed in the SIMOX top Si layer.The use of GexSi1−x epitaxial layers to reduce threading dislocation densities was examined. A 1000°C Si buffer layer was first grown for 30s, followed by a GexSi1−x layer, and topped off by a 1000°C Si layer for 120s. The GexSi1−x layers were grown at temperatures varying from 850°C to 1000°C for 30s to 240s. The defect density was significantly reduced when the 900°C and 850°C GexSi1−x layers were used, although an increase in stacking fault densities (still small compared to threading dislocation densities) accompanied the lower deposition temperatures. The 1000°C GexSi1−x layer and a control sample in which pure Si was grown showed no significant decrease in defect densities.

Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400°C) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace

2006 ◽  
Vol 527-529 ◽  
pp. 1309-1312
Author(s):  
Ryouji Kosugi ◽  
Kenji Suzuki ◽  
Kazuto Takao ◽  
Yusuke Hayashi ◽  
Tsutomu Yatsuo ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Thermal Processes ◽  
Cold Wall ◽  
Channel Mobility ◽  
Blocking Voltage ◽  
Interfacial Defects ◽  
Maximum Process ◽  
Short Time

A passivation annealing in nitric oxide (NO) ambient significantly reduces the interfacial defects of the SiO2/4H-SiC interface and improves the inversion MOS channel mobility. Effects of the nitridation in NO ambient become more pronounced at high temperatures in general. However, the maximum process temperature in a standard hot-wall oxidation furnace is restricted around 1200oC due to the softening point of quartz. Meanwhile, by use of a cold-wall oxidation furnace, high temperature and short time thermal processes become possible. In this study, we have developed an extremely high temperature (>1400oC) rapid thermal processing for the gate oxidation in the 4H-SiC DIMOSFET fabrication process. The peak MOS channel mobility of lateral MOSFETs on the DIMOSFET chip shows as high as 19cm2/Vs. The specific on-resistance of the device was 12.5mcm2 and the blocking voltage was 950V with gate shorted to the source.

Improvement of Temperature Uniformity in Rapid Thermal Processing Systems Using Multivariable Control

1991 ◽  
Vol 224 ◽  
Author(s):  
S. A. Norman ◽  
C. D. Schaper ◽  
S. P. Boyd
Keyword(s):  
Steady State ◽  
Temperature Distribution ◽  
Thermal Processing ◽  
Numerical Technique ◽  
Rapid Thermal Processing ◽  
Temperature Uniformity ◽  
Wafer Temperature ◽  
Scalar Control ◽  
Steady State Temperature ◽  
Knob Control

AbstractDuring rapid thermal processing (RTP) of a semiconductor wafer, maintenance of nearuniform wafer temperature distribution is necessary. This paper addresses the problem of insuring temperature uniformity in a cylindrical RTP system with multiple concentric circular lamps.A numerical technique is presented for optimizing steady-state temperature distribution by independently varying the power radiated by each lamp. It is shown for a simulated system, over a wide range of temperature setpoints, that the temperature uniformity achievable with multivariable (“multiple knob”) control of lamp powers is significantly better than that achievable with scalar (“single knob”) control.The difficulties of using scalar control in RTP are more severe in the case of temperature trajectory design than in the case of steady-state temperature maintenance. For example, with scalar control the rate of temperature increase during ramping is limited because temperature nonuniformity can cause slip defects in the wafer. A numerical technique is presented for designing multivariable lamp power trajectories to obtain near-optimal temperature uniformity while wafer temperature tracks a specified ramp, resulting in slip-free ramp rates much faster than those achievable with scalar control.

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