A combination of rapid thermal processing and photochemical deposition for the growth of SiO2suitable for InP device applications

1990 ◽  
Vol 68 (11) ◽  
pp. 5636-5640 ◽  
Author(s):  
C. Licoppe ◽  
F. Wattine ◽  
C. Meriadec ◽  
J. Flicstein ◽  
Y. I. Nissim
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Photochemical Deposition ◽  
Device Applications

Rapid Thermal Processing: A Bibliography

1985 ◽  
Vol 52 ◽  
Author(s):  
R. A. Powell ◽  
M. L. Manion
Keyword(s):  
Thermal Processing ◽  
Beam Energy ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Compound Semiconductors ◽  
Dopant Activation ◽  
Broad Beam ◽  
Device Applications ◽  
And Diffusion

ABSTRACTThis bibliography presents 342 references to work published on rapid thermal processing (RTP) from 1979 through mid-1985. A variety of broad-beam energy sources are represented, including: arc and quartz-halogen lamps, blackbody radiators, strip heaters, broadly rastered electron beams, and defocused CO2 lasers. Citations were obtained by both manual searching and searching of a commercially available computerized data base (I NSPEC). Entries are grouped under 13 topical headings: reviews, implanted dopant activation and diffusion in silicon, polycrystalline silicon, silicides and polycides, metals, dielectrics, compound semiconductors, defects and microstructure, device applications (silicon and compound semiconductors), miscellaneous applications, equipment, and modeling. Within each group, citations are arranged alphabetically by title. A full author index is provided.

Silicide Formation by Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
L.J. Chen ◽  
W. Lur ◽  
J.F. Chen ◽  
T.L. Lee ◽  
J.M. Liang
Keyword(s):  
Thermal Stability ◽  
Rare Earth ◽  
Thermal Processing ◽  
Metastable Phase ◽  
Rapid Thermal Processing ◽  
Silicide Formation ◽  
Vacancy Ordering ◽  
Shallow Junctions ◽  
Device Applications ◽  
Growth Formation

ABSTRACTAn overview of silicide formation by rapid thermal processing is presented. Recent progresses on device applications, phase formation, growth kinetics, thermal stability, epitaxial growth, formation of metastable phase, vacancy ordering in rare-earth silicides and Ti-based shallow junctions involving rapid thermal processing are used as examples to highlight the applications of rapid thermal processing in connection with silicide formation.

Device Applications of Rapid Thermal Processing

1983 ◽  
Vol 23 ◽  
Author(s):  
J. F. Gibbons ◽  
D. M. Dobkin ◽  
M. E. Greiner ◽  
J. L. Hoyt ◽  
W. G. Opyd
Keyword(s):  
Integrated Circuit ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Bipolar Technology ◽  
Device Applications ◽  
Novel Applications ◽  
Circuit Technology

ABSTRACTThe potential of rapid thermal processing for applications in silicon integrated circuit technology, silicon microwave bipolar technology and GaAs FET technology is explored.In addition, two novel applications for GaAs processing are described.

Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

2019 ◽  
Vol 8 (1) ◽  
pp. P35-P40 ◽  
Author(s):  
Haruo Sudo ◽  
Kozo Nakamura ◽  
Susumu Maeda ◽  
Hideyuki Okamura ◽  
Koji Izunome ◽  
...  
Keyword(s):  
Point Defect ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Defect Reaction

Modeling, Identification, and Control of Rapid Thermal Processing Systems

1994 ◽  
Vol 141 (11) ◽  
pp. 3200-3209 ◽  
Author(s):  
Charles D. Schaper ◽  
Mehrdad M. Moslehi ◽  
Krishna C. Saraswat ◽  
Thomas Kailath
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
And Control

5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs

1990 ◽  
Vol 29 (Part 2, No. 1) ◽  
pp. L137-L140 ◽  
Author(s):  
Hisashi Fukuda ◽  
Akira Uchiyama ◽  
Takahisa Hayashi ◽  
Toshiyuki Iwabuchi ◽  
Seigo Ohno
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Gate Oxide

Diffusion of Zn into Gaas 0.6 P0.4:Te From Zn-Doped Oxide Films By Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
A. Usami ◽  
Y. Tokuda ◽  
H. Shiraki ◽  
H. Ueda ◽  
T. Wada ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Zn Diffusion ◽  
Enhanced Diffusion ◽  
Conventional Furnace ◽  
Zn Concentration ◽  
The Difference ◽  
Doped Oxide

ABSTRACTRapid thermal processing using halogen lamps was applied to the diffusion of Zn into GaAs0.6 P0.4:Te from Zn-doped oxide films. The Zn diffusion coefficient of the rapid thermal diffused (RTD) samples at 800°C for 6 s was about two orders of magnitude higher than that of the conventional furnace diffused samples at 800°C for 60 min. The enhanced diffusion of Zn by RTD may be ascribed to the stress field due to the difference in the thermal expansion coefficient between the doped oxide films and GaAs0.6P0.4 materials, and due to the temperature gradient in GaAs0.6P0 4 materials. The Zn diffusion coefficient at Zn concentration of 1.0 × l018 cm−3 was 3.6 × 10−11, 3.1 × 10−11 and 5.0 × 10−12 cm2 /s for the RTD samples at 950°C for 6 s from Zn-, (Zn,Ga)- and (Zn,P)-doped oxide films, respectively. This suggests that Zn diffusibility was controlled by the P in the doped oxide films.

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