Selective deposition ofinsitudoped polycrystalline silicon by rapid thermal processing chemical vapor deposition

1989 ◽  
Vol 55 (23) ◽  
pp. 2408-2410 ◽  
Author(s):  
T. Y. Hsieh ◽  
H. G. Chun ◽  
D. L. Kwong
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Selective Deposition

Multizone Rapid Thermal Processing to Overcome Challenges in Carbon Nanotube Manufacturing by Chemical Vapor Deposition

2019 ◽  
Author(s):  
Jaegeun Lee ◽  
Moataz Abdulhafez ◽  
Mostafa Bedewy
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Growth Dynamics ◽  
Chemical Vapor ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned ◽  
Scalable Production

Abstract For the scalable production of commercial products based on vertically aligned carbon nanotubes (VACNTs), referred to as CNT forests, key manufacturing challenges must be overcome. In this work, we describe some of the main challenges currently facing CNT forest manufacturing, along with how we address these challenges with our custom-built rapid thermal processing chemical vapor deposition (CVD) reactor. First, the complexity of multistep processes and reaction pathways involved in CNT growth by CVD limits the control on CNT population growth dynamics. Importantly, gas-phase decomposition of hydrocarbons, formation of catalyst particles, and catalytic growth of CNTs are typically coupled. Here, we demonstrated a decoupled recipe with independent control of each step. Second, significant run-to-run variations plague CNT growth by CVD. To improve growth consistency, we designed various measures to remove oxygen-containing molecules from the reactor, including air baking between runs, dynamic pumping down cycles, and low-pressure baking before growth. Third, real-time measurements during growth are needed for process monitoring. We implement in situ height kinetics via videography. The combination of approaches presented here has the potential to transform lab-scale CNT synthesis to robust manufacturing processes.

Low-Pressure Chemical Vapor Deposition of Polycrystalline Silicon and Silicon Dioxide By Rapid Thermal Processing

1989 ◽  
Vol 146 ◽  
Author(s):  
Mehmet C. Öztürk ◽  
Jimmie J. Wortman ◽  
Yu-Lin Zhong ◽  
Xiao-Wei Ren ◽  
Roderick M. Miller ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Passivation Layers ◽  
Pressure Chemical ◽  
Reactive Gas

ABSTRACTLow-pressure chemical vapor deposition of polycrystalline silicon and silicon dioxide in a lampheated cold-wall rapid thermal processor have been investigated. Silicon dioxide films have been deposited by thermal decomposition of tetraethylorthosilicate known as TEOS. The technique can be used for rapid deposition of good quality thick passivation layers at moderate temperatures. Polycrystalline silicon depositions have been accomplished using silane (SiH4) diluted in argon as the reactive gas. Surface roughness and resistivity of the films deposited at temperatures above 700°C are comparable in quality to films deposited in a conventional LPCVD reactor at 610°C. In this temperature range, deposition rates as high as 4000Å/min can be obtained.

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