Correlation of Electrical and Physical Properties of SIMOX BOX Affected by Various Implantation Parameters

1996 ◽  
Vol 446 ◽  
Author(s):  
J. U. Yoon ◽  
G. N. Kim ◽  
J‐H Y. Krska ◽  
J. E. Chung ◽  
L. P. Allen ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Substrate Temperature ◽  
High Field ◽  
Beam Current ◽  
Interface Roughness ◽  
Surface Photovoltage ◽  
Buried Oxide ◽  
Current Variation ◽  
The Impact ◽  
Substrate Temperatures

AbstractThe impact of two implant parameters, namely the implant substrate temperature and implant beam current, on the physical and electrical properties of SIMOX buried oxide are investigated. Three implant substrate temperatures, 540 °C, 590 °C, and 640 °C and three beam current, 45 mA, 55 mA, 65 mA, are investigated. Results from thermal conductivity and surface photovoltage measurements show no apparent differences between samples. Results from interface roughness shows a decreasing trend as the substrate temperature and beam current increases. For the samples with different implant temperatures, the high‐field conduction shows an opposite dependence for top‐interface versus substrate injection. This behavior can be explained by the conservation of silicon in the buried oxide. Correlation of surface photovoltage and high‐field conduction shows weak positive dependency while that of interface roughness and high‐field conduction shows dependency only when the sets of temperature variation and beam current variation are decoupled.

scholarly journals The Impact of the Surface Treatments on the Properties of Gan/3C-SiC/Si Based Schottky Barrier Diodes

2013 ◽  
Vol 740-742 ◽  
pp. 1111-1114 ◽  
Author(s):  
Ji Sheng Han ◽  
Philip Tanner ◽  
Sima Dimitrijev ◽  
Qu Shuang ◽  
Yan Shen ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Barrier Height ◽  
Schottky Contact ◽  
Surface Preparation ◽  
Schottky Contacts ◽  
Si Substrates ◽  
Contact Barrier ◽  
The Impact ◽  
Substrate Temperatures ◽  
Effect Of Surface

In this work, we studied the effect of surface preparation and substrate temperature during sputter deposition of Schottky contacts on N-GaN/SiC/Si substrates, looking at parameters such as on-resistance, reverse leakage, and contact barrier height. Ti, Ni and Mo were sputtered to form the contacts, and we characterized the I-V curves with the different substrate temperatures during the sputtering as shown in Figure 1. For the Ti Schottky contact, the substrate temperature of 100oC during the sputtering demonstrates the minimum series resistance with Rs about 0.04cm2, while temperatures greater than 3000C increased reverse bias leakage. The Mott-Schottky plot reveals a barrier height of 1.2V for this contact. Results for sputtered Ni contacts using different substrate temperatures will also be presented, as well as the effect of Ar sputter cleaning before contact deposition.

Mechanisms of Formation of Thin Buried Oxide Layers by Ion Implantation

1987 ◽  
Vol 93 ◽  
Author(s):  
Alice E. White ◽  
K. T. Short ◽  
L. N. Pfeiffer ◽  
K. W. West
Keyword(s):  
Substrate Temperature ◽  
Annealing Temperature ◽  
Oxide Formation ◽  
Thermally Activated ◽  
Buried Oxide ◽  
Annealing Conditions ◽  
Mechanisms Of Formation ◽  
Substrate Temperatures ◽  
Thermally Activated Process

ABSTRACTWe have studied buried oxide formation as a function of implantation and annealing conditions. The layers appear to form via a nucleation and growth process, so the quality of the oxide and the perfection of the overlying crystalline Si layer depend more strongly on the substrate temperature during implantation than on the annealing temperature. Since it is easier to observe the layer formation process in a thin (<1000Å) layer, we concentrated on sub-stoichiometric doses and chose substrate temperatures below 400°C to stay in a homogeneous nucleation regime. Then we varied the annealing temperature from 1150°C to 1407°C. Modeling the coalescence of the oxide layer as a thermally-activated process yields activation energies of approximately 6 eV, suggesting that crystalline damage removal may be the bottleneck for this substrate temperature regime.

Influence of the Substrate Temperature on the Texture of MgO Films Grown by Ion Beam Assisted Deposition

2005 ◽  
Vol 868 ◽  
Author(s):  
Liliana Stan ◽  
Paul N. Arendt ◽  
Raymond F. DePaula ◽  
Igor Usov ◽  
James R. Groves
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Orientation Distribution ◽  
Beam Current ◽  
Energetic Ions ◽  
Ion Beam Assisted Deposition ◽  
Acceptable Deviation ◽  
Substrate Temperatures ◽  
Deposition Conditions

AbstractThe variation in the substrate temperature during ion beam assisted deposition (IBAD), which employs the use of energetic ions to bombard a growing film, has been shown to influence the quality of crystalline texture in MgO films. Determining the acceptable deviation from the optimum ion to molecule ratio for different substrate temperatures establishes the optimum MgO deposition conditions. For each fixed deposition temperature, a set of samples was produced by varying the ion assist beam current from sample to sample while keeping the deposition rate constant. In this way, the ion to molecule ratio was modified and the range of achieving well textured films was determined. The investigation of the MgO texture dependence on the substrate temperature reveals that the best in-plane alignment is obtained at ˜ 25°C. At this temperature, MgO films with in-plane orientation distribution as low as 3.7° full width at half maximum (FWHM) have been attained. MgO films deposited at temperatures higher than 100°C have broad in-plane alignment. Although, the deposition at the lowest temperature (-150°C) did not improve the in-plane texture, the acceptable deviation from the optimum ion to molecule ratio for achieving biaxially textured films was the largest. As a trend, the acceptable ion to molecule deviation decreases with increasing substrate temperature. This is especially important for continuous IBAD MgO depositions where less restrictive conditions are desired.

Thermal Transport in Novel Silicon Transistors

2004 ◽  
Author(s):  
Keivan Etessam-Yazdani ◽  
Wenjun Liu ◽  
Yizhang Yang ◽  
Mehdi Asheghi
Keyword(s):  
Thermal Conductivity ◽  
Semiconductor Device ◽  
Silicon Layer ◽  
Phonon Transport ◽  
Interface Roughness ◽  
Strained Silicon ◽  
Boltzmann Transport ◽  
Strained Si ◽  
Thin Silicon ◽  
The Impact

This manuscript investigates the relevance and impact of nanoscale thermal phenomena in the state-of-the-art semiconductor device technologies such as: silicon-on-insulator (SOI), strained silicon, and tri-gate CMOS transistors. The experimental data and predictions for thin silicon layer thermal conductivity and the solutions of the Boltzmann transport equations (BTE) for phonon transport in strained-Si/Ge bi-layer configuration are used to estimate the thermal resistance of the SOI, tri-gate, and strained-silicon-on-SiGe-on-insulator (SGOI) transistors, respectively. In particular, the impact of SiGe underlayer and interface roughness on the lateral thermal conductivity of the silicon layer at room temperature is investigated. In order to avoid the complexity of the BTE for predictions of the temperature distribution, Lumped Analytical (LA) models are introduced that are simple to implement and also adequate enough to capture the sub-continuum effects. It is concluded that the SOI, SGOI and tri-gate transistors are all susceptible to self-heating for very thin silicon device layers.

The Effects of Van Der Waals Bonding Strength on the In-Plane Lattice Thermal Conductivities of Multilayer Thin Films

2012 ◽  
Author(s):  
Weiyu Chen ◽  
Zhonghua Ni ◽  
Juekuan Yang ◽  
Yan Zhang ◽  
Deyu Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Bonding Strength ◽  
Van Der Waals ◽  
Interface Roughness ◽  
Multilayer Thin Films ◽  
Continuous Increase ◽  
Non Equilibrium Molecular Dynamics ◽  
The Impact ◽  
Thermal Conductivities

A non-equilibrium molecular dynamics (NEMD) simulation model is established to investigate the impact of vdW strength on thermal transport along the in-plane direction in argon bi-layer films (BLFs) and silicon BLFs. Simulation results indicate that higher strength leads to a higher in-plane thermal conductivity. However, interface roughness also increases with the continuous increase of the van der Waals (vdW) strength and leads to the reduction of thermal conductivities. The bonding strength does play an important role in manipulating thermal conductivity of multilayer thin films.

Production of Mo/si Multilayers At Increased Substrate Temperatures: The Effect On D-Spacing, Interface Roughness and Density.

1995 ◽  
Vol 382 ◽  
Author(s):  
H.-J. Voorma ◽  
E. Louis ◽  
N.B. Koster ◽  
F. Bijkerk ◽  
M.J. van der
Keyword(s):  
Substrate Temperature ◽  
Free Volume ◽  
Room Temperature ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Interface Roughness ◽  
Multilayer Structures ◽  
Substrate Temperatures

ABSTRACTTo obtain the optimal growth conditions of Mo/Si multilayer structures, produced with e-beam evaporation, the effect of using enhanced deposition temperatures is investigated in detail. We describe the variations of the structure for multilayers deposited at substrate temperatures ranging from 300 K to 550 K. A temperature of 490 K was found to be the optimum resulting in low interface roughness and moderate inter-diffusion. The decrease of the dspacing at the optimum substrate temperature, compared to coatings deposited at room temperature, is explained by a change in free volume of the Si layer.

Observations on the growth of barium bismuth oxide thin films

1992 ◽  
Vol 50 (1) ◽  
pp. 76-77
Author(s):  
M G. Norton ◽  
E.S. Hellman ◽  
E.H. Hartford ◽  
C.B. Carter
Keyword(s):  
Substrate Temperature ◽  
Deposition Process ◽  
Nucleation Layer ◽  
Second Stage ◽  
Device Applications ◽  
High Transition ◽  
Substrate Temperatures ◽  
Oriented Material ◽  
Barium Bismuth ◽  
Superconductor Device

The bismuthates (for example, Ba1-xKxBiO3) represent a class of high transition temperature superconductors. The lack of anisotropy and the long coherence length of the bismuthates makes them technologically interesting for superconductor device applications. To obtain (100) oriented Ba1-xKxBiO3 films on (100) oriented MgO, a two-stage deposition process is utilized. In the first stage the films are nucleated at higher substrate temperatures, without the potassium. This process appears to facilitate the formation of the perovskite (100) orientation on (100) MgO. This nucleation layer is typically between 10 and 50 nm thick. In the second stage, the substrate temperature is reduced and the Ba1-xKxBiO3 is grown. Continued growth of (100) oriented material is possible at the lower substrate temperature.

scholarly journals Ice Coverage Induced by Depositing a Water Drop onto the Supercooled Substrate at Extreme Low Vapor Pressure

Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 691
Author(s):  
Yugang Zhao ◽  
Zichao Zuo ◽  
Haibo Tang ◽  
Xin Zhang
Keyword(s):  
Vapor Pressure ◽  
Substrate Temperature ◽  
Water Drop ◽  
Industrial Processes ◽  
Aircraft Icing ◽  
Ice Coverage ◽  
Fundamental Understanding ◽  
Order Of Magnitude ◽  
The Impact ◽  
Kinetics Of

Icing/snowing/frosting is ubiquitous in nature and industrial processes, and the accretion of ice mostly leads to catastrophic consequences. The existing understanding of icing is still limited, particularly for aircraft icing, where direct observation of the freezing dynamics is inaccessible. In this work, we investigate experimentally the impact and freezing of a water drop onto the supercooled substrate at extremely low vapor pressure, to mimic an aircraft passing through clouds at a relatively high altitude, engendering icing upon collisions with pendant drops. Special attention is focused on the ice coverage induced by an impinging drop, from the perimeter pointing outward along the radial direction. We observed two freezing regimes: (I) spread-recoil-freeze at the substrate temperature of Ts = −15.4 ± 0.2 °C and (II) spread (incomplete)-freeze at the substrate temperature of Ts = −22.1 ± 0.2 °C. The ice coverage is approximately one order of magnitude larger than the frozen drop itself, and counterintuitively, larger supercooling yields smaller ice coverage in the range of interest. We attribute the variation of ice coverage to the kinetics of vapor diffusion in the two regimes. This fundamental understanding benefits the design of new anti-icing technologies for aircraft.

scholarly journals Numerical simulation of variable thermal conductivity on 3D flow of nanofluid over a stretching sheet

2020 ◽  
Vol 9 (1) ◽  
pp. 233-243 ◽  
Author(s):  
Nainaru Tarakaramu ◽  
P.V. Satya Narayana ◽  
Bhumarapu Venkateswarlu
Keyword(s):  
Heat Transfer ◽  
Thermal Conductivity ◽  
Stretching Sheet ◽  
Three Dimensional ◽  
Variable Thermal Conductivity ◽  
Normal Velocity ◽  
Transfer Coefficients ◽  
Similarity Transformations ◽  
Frictional Coefficients ◽  
The Impact

AbstractThe present investigation deals with the steady three-dimensional flow and heat transfer of nanofluids due to stretching sheet in the presence of magnetic field and heat source. Three types of water based nanoparticles namely, copper (Cu), aluminium oxide (Al2O3), and titanium dioxide (TiO2) are considered in this study. The temperature dependent variable thermal conductivity and thermal radiation has been introduced in the energy equation. Using suitable similarity transformations the dimensional non-linear expressions are converted into dimensionless system and are then solved numerically by Runge-Kutta-Fehlberg scheme along with well-known shooting technique. The impact of various flow parameters on axial and transverse velocities, temperature, surface frictional coefficients and rate of heat transfer coefficients are visualized both in qualitative and quantitative manners in the vicinity of stretching sheet. The results reviled that the temperature and velocity of the fluid rise with increasing values of variable thermal conductivity parameter. Also, the temperature and normal velocity of the fluid in case of Cu-water nanoparticles is more than that of Al2O3- water nanofluid. On the other hand, the axial velocity of the fluid in case of Al2O3- water nanofluid is more than that of TiO2nanoparticles. In addition, the current outcomes are matched with the previously published consequences and initiate to be a good contract as a limiting sense.

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