Temperature and interlayer coupling induced thermal transport across graphene/2D-SiC van der Waals heterostructure

Graphene based two-dimensional (2D) van der Waals (vdW) materials have attracted enormous attention because of their extraordinary physical properties. In this study, we explore the temperature and interlayer coupling induced thermal transport across the graphene/2D-SiC vdW interface using non-equilibrium molecular dynamics and transient pump probe methods. We find that the in-plane thermal conductivity κ deviates slightly from the 1/T law at high temperatures. A tunable κ is found with the variation of the interlayer coupling strength χ. The interlayer thermal resistance R across graphene/2D-SiC interface reaches 2.71 $$\times$$ × 10–7$${\text{Km}}^{2} /{\text{W}}$$ Km 2 / W at room temperature and χ = 1, and it reduces steadily with the elevation of system temperature and χ, demonstrating around 41% and 56% reduction with increasing temperature to 700 K and a χ of 25, respectively. We also elucidate the heat transport mechanism by estimating the in-plane and out-of-plane phonon modes. Higher phonon propagation possibility and Umklapp scattering across the interface at high temperatures and increased χ lead to the significant reduction of R. This work unveils the mechanism of heat transfer and interface thermal conductance engineering across the graphene/2D-SiC vdW heterostructure.

Mott–Hubbard insulating state for the layered van der Waals $$\hbox {FePX}_3$$ (X: S, Se) as revealed by NEXAFS and resonant photoelectron spectroscopy

A broad family of the nowadays studied low-dimensional systems, including 2D materials, demonstrate many fascinating properties, which however depend on the atomic composition as well as on the system dimensionality. Therefore, the studies of the electronic correlation effects in the new 2D materials is of paramount importance for the understanding of their transport, optical and catalytic properties. Here, by means of electron spectroscopy methods in combination with density functional theory calculations we investigate the electronic structure of a new layered van der Waals $$\hbox {FePX}_3$$ FePX 3 (X: S, Se) materials. Using systematic resonant photoelectron spectroscopy studies we observed strong resonant behavior for the peaks associated with the $$3d^{n-1}$$ 3 d n - 1 final state at low binding energies for these materials. Such observations clearly assign $$\hbox {FePX}_3$$ FePX 3 to the class of Mott–Hubbard type insulators for which the top of the valence band is formed by the hybrid Fe-S/Se electronic states. These observations are important for the deep understanding of this new class of materials and draw perspectives for their further applications in different application areas, like (opto)spintronics and catalysis.

Weak discontinuities in one-dimensional compressible nonideal gas dynamics

This article concerns the study of various parameter effects on the propagation of weak discontinuities by using the method of characteristics. Analytical solutions of the quasi-linear system of hyperbolic partial differential equations (PDEs) are obtained and examined the evolutionary behavior of shock in the characteristic plane. The general behavior of solutions to the Bernoulli equation, which determines the evolution of weak discontinuity in a nonlinear system, is studied in detail. Also, we discuss the formation and distortion of compressive and expansive discontinuities under the van der Waals parameter effect and small particles for planar and cylindrical symmetric flow. The comparison between planar flow and cylindrical symmetric flow is studied under the influence of nonidealness and mass fraction of dust particles. It is found that the compressive waves become shock after a certain lapse of time. The medium considered here is the mixture of van der Waals gas with small dust particles.