Production of Mo/si Multilayers At Increased Substrate Temperatures: The Effect On D-Spacing, Interface Roughness and Density.

1995 ◽  
Vol 382 ◽  
Author(s):  
H.-J. Voorma ◽  
E. Louis ◽  
N.B. Koster ◽  
F. Bijkerk ◽  
M.J. van der
Keyword(s):  
Substrate Temperature ◽  
Free Volume ◽  
Room Temperature ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Interface Roughness ◽  
Multilayer Structures ◽  
Substrate Temperatures

ABSTRACTTo obtain the optimal growth conditions of Mo/Si multilayer structures, produced with e-beam evaporation, the effect of using enhanced deposition temperatures is investigated in detail. We describe the variations of the structure for multilayers deposited at substrate temperatures ranging from 300 K to 550 K. A temperature of 490 K was found to be the optimum resulting in low interface roughness and moderate inter-diffusion. The decrease of the dspacing at the optimum substrate temperature, compared to coatings deposited at room temperature, is explained by a change in free volume of the Si layer.

Growth of Co Nanoclusters on SiC Honeycomb Templates

2004 ◽  
Vol 818 ◽  
Author(s):  
Wei Chen ◽  
Kian Ping Loh ◽  
Hai Xu ◽  
A.T.S. Wee
Keyword(s):  
Substrate Temperature ◽  
Room Temperature ◽  
Scanning Tunneling ◽  
Nucleation Process ◽  
Desorption Rate ◽  
Tunneling Microscopy ◽  
Scale Range ◽  
Reconstructed Surface ◽  
Substrate Temperatures

AbstractA honeycomb-like SiC reconstructed surface with regular, periodic porosity in the nano-scale range has been used as an effective template for the formation of monodispersed Co nanoclusters. In-situ scanning tunneling microscopy (STM) was used to study the nucleation process of the Co nanoclusters on this template. The deposition of Co at different substrate temperature was investigated by STM. It is found that the failure in the deposition of Co nanoclusters on the SiC honeycomb template with substrate temperatures higher than room temperature (RT) might be due to the high desorption rate of the adsorbed Co atoms.

Correlation of the Stress-Temperature History with Microstructure in A1-0.5Cu and A1-0.15Pd Thin Films

1994 ◽  
Vol 356 ◽  
Author(s):  
D. D. Knorr ◽  
K.P. Rodbell
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Substrate Temperature ◽  
Grain Growth ◽  
Room Temperature ◽  
Temperature History ◽  
Thermal Expansion Mismatch ◽  
Grain Sizes ◽  
Substrate Temperatures ◽  
Precipitate Structure

AbstractBlanket films (1 μm thick) of both A1-0.5Cu and A1-0.15Pd were deposited at room temperature, 150°C, and 300°C. Stress in the as-deposited wafers increased with substrate temperature, as expected from the thermal expansion mismatch on cooling. All conditions were tiicrmally cycled to 450°C three times while continuously monitoring stress. The shapes of the curves were different for the two alloys because precipitates dissolve and reprecipitate in AlCu, but are present over the entire temperature range in AlPd. Lesser differences were evident comparing the stress-temperature behavior for the various substrate temperatures within a single alloy. The precipitate structure also influences the grain growth during thermal cycling, where substantially larger median grain sizes are found in AlCu compared to AlPd.

Substrate Temperature Dependence on Sputtered Titania Thin Film

2013 ◽  
Vol 795 ◽  
pp. 294-298 ◽  
Author(s):  
Zainuddin Aznilinda ◽  
Sukreen Hana Herman ◽  
A.B. Raudah ◽  
W.F.H. Abdullah ◽  
M. Rusop
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Columnar Structure ◽  
Film Structure ◽  
Glass Substrates ◽  
Titania Thin Film ◽  
Titania Films ◽  
Substrate Temperatures

Titania films were deposited on glass substrates by RF magnetron sputtering method at different substrate temperatures which are room temperature, 50°C, 100°C, 150°C, 200°C, 250°C and 300°C. The surface morphology and cross section of the particles structure were studied using Field Emission Scanning Electron Microscope. It is shown that the increase in substrate temperature during the sputtering process up to 300°C will make the film become more dense and grown in a columnar structure. Significant changes occur on the titania thin film structure at 250°C due to the significant changes in the surface thermal energy and the surface diffusion.

Correlation of Electrical and Physical Properties of SIMOX BOX Affected by Various Implantation Parameters

1996 ◽  
Vol 446 ◽  
Author(s):  
J. U. Yoon ◽  
G. N. Kim ◽  
J‐H Y. Krska ◽  
J. E. Chung ◽  
L. P. Allen ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Substrate Temperature ◽  
High Field ◽  
Beam Current ◽  
Interface Roughness ◽  
Surface Photovoltage ◽  
Buried Oxide ◽  
Current Variation ◽  
The Impact ◽  
Substrate Temperatures

AbstractThe impact of two implant parameters, namely the implant substrate temperature and implant beam current, on the physical and electrical properties of SIMOX buried oxide are investigated. Three implant substrate temperatures, 540 °C, 590 °C, and 640 °C and three beam current, 45 mA, 55 mA, 65 mA, are investigated. Results from thermal conductivity and surface photovoltage measurements show no apparent differences between samples. Results from interface roughness shows a decreasing trend as the substrate temperature and beam current increases. For the samples with different implant temperatures, the high‐field conduction shows an opposite dependence for top‐interface versus substrate injection. This behavior can be explained by the conservation of silicon in the buried oxide. Correlation of surface photovoltage and high‐field conduction shows weak positive dependency while that of interface roughness and high‐field conduction shows dependency only when the sets of temperature variation and beam current variation are decoupled.

scholarly journals High temperature ferromagnetic ordering in c-axis oriented ZnO:Mn nanoparticle thin films by tailoring substrate temperature

2014 ◽  
Vol 32 ◽  
pp. 1460341 ◽  
Author(s):  
Usman Ilyas ◽  
P. Lee ◽  
T. L. Tan ◽  
R. V. Ramanujan ◽  
Sam Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Magnetic Measurements ◽  
Deep Level ◽  
Growth Conditions ◽  
Optical Quality ◽  
Host Matrix ◽  
X Ray ◽  
Ferromagnetic Ordering ◽  
Substrate Temperatures

This study reports the enhanced ferromagnetic ordering in ZnO:Mn nanoparticle thin films, grown at different substrate temperatures using pulsed laser deposition. The optimum growth conditions were deduced from X-ray, photoemission and magnetic measurements. The X-ray measurements reveal that there was an optimum substrate temperature where the thin films showed relatively stronger texture, better crystallinity and lower strain. Substrate temperature tuned the deep level recombination centers in ZnO:Mn , which changed the optical quality by altering the electronic structure. The M-H curves, in the present study, revealed superior ferromagnetic response of 20-nm sized particles in ZnO:Mn thin film grown at a substrate temperature of 450 °C. Ferromagnetic ordering becomes weaker at higher/lower substrate temperatures due to the activation of native defects in ZnO host matrix.

Influence of Growth Parameters and Annealing on Properties of MBE Grown GaAsSbN SQWs

2005 ◽  
Vol 872 ◽  
Author(s):  
Liangjin Wu ◽  
Shanthi Iyer ◽  
Kalyan Nunna ◽  
Sudhakar Bharatan ◽  
Jia Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Growth Parameters ◽  
Blue Shift ◽  
Growth Conditions ◽  
Ex Situ ◽  
Single Quantum Well ◽  
Substrate Temperatures

AbstractIn this paper we report the growth of GaAsSbN/GaAs single quantum well (SQW) heterostructures by molecular beam epitaxy (MBE) and their properties. A systematic study has been carried out to determine the effect of growth conditions, such as the source shutter opening sequence and substrate temperature, on the structural and optical properties of the layers. The substrate temperatures in the range of 450-470 °C were found to be optimal. Simultaneous opening of the source shutters (SS) resulted in N incorporation almost independent of substrate temperature and Sb incorporation higher at lower substrate temperatures.The effects of ex-situ annealing in nitrogen ambient and in-situ annealing under As overpressure on the optical properties of the layers have also been investigated. A significant increase in photoluminescence (PL) intensity with reduced full width at half maxima (FWHM) in conjunction with a blue shift in the emission energy was observed on annealing the samples. In in-situ annealed samples, the PL line shapes were more symmetric and the temperature dependence of the PL peak energy indicated significant decrease in the exciton localization energy as exhibited by a less pronounced “S-shaped curve”. The “inverted S-shaped curve” observed in the temperature dependence of PL FWHM is also discussed. 1.61 μm emission with FWHM of 25 meV at 20K has been obtained in in-situ annealed GaAsSbN/GaAs SQW grown at 470 °C by SS.

EFFECT OF SUBSTRATE TEMPERATURE ON THE GROWTH OF COPPER OXIDE THIN FILMS DEPOSITED BY PULSED LASER DEPOSITION TECHNIQUE

2018 ◽  
Vol 25 (02) ◽  
pp. 1850053 ◽  
Author(s):  
MUHAMMAD KAIF SHABBIR ◽  
SHAZIA BASHIR ◽  
QAZI SALMAN AHMED ◽  
NAZISH YASEEN ◽  
SOHAIL ABDUL JALIL ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Copper Oxide ◽  
Growth Temperature ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Oxide Thin Films ◽  
Vis Spectroscopy ◽  
Substrate Temperatures ◽  
Deposited Films

The effect of substrate temperature on growth of pulsed laser deposited copper oxide thin films has been investigated by employing Nd: YAG laser (532[Formula: see text]nm, 6[Formula: see text]ns, 10[Formula: see text]Hz) irradiation at a fluence of 8.2[Formula: see text]J/cm2. XRD analysis reveals that copper oxide films deposited at room temperature are amorphous in nature, whereas films deposited at higher substrate temperatures are polycrystalline in nature. SEM and AFM analyses revealed that films deposited at substrate temperatures, ranging from room temperature to 300[Formula: see text]C are comprised of large sized clusters, islands and particulates, whereas uniform films with an appearance of granular morphology and distinct bump formation are grown at higher substrate temperatures of 400[Formula: see text]C and 500[Formula: see text]C. The optical bandgap of deposited films is evaluated by UV-VIS spectroscopy and shows a decreasing trend with increasing substrate temperature. Four point probe analysis reveals that electrical conductivity of the deposited films increases with increase in the substrate temperature, and is maximum for highest growth temperature of 500[Formula: see text]C. It is revealed that growth temperature plays a significant role for structure, texture, optical and electrical behavior of copper oxide thin films. The surface and structural properties of the deposited films are well correlated with their electrical and optical response.

Heteroepitaxial Growth of Epitaxial C60-Thin Films on Mica(001)

1994 ◽  
Vol 359 ◽  
Author(s):  
S. Henke ◽  
K.H. Thürer ◽  
S. Geier ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

ABSTRACTOn mica(001) thin C60-films are deposited by thermal evaporation at substrate temperatures from room temperature up to 225°C. The dependence of the structure and the epitaxial alignment of the thin C60-films on mica(001) on the substrate temperature and the film thickness up to 1.3 μm at a well-defined deposition rate (0.008 nm/s) is investigated by atomic force microscopy and X-ray diffraction. The shape and the size of the C60-islands, which have an influence on the film quality at larger film thicknesses, are sensitively dependent on the substrate temperature. At a film thickness of 200 nm the increase of the substrate temperature up to 225°C leads to smooth, completely coalesced epitaxial C60-thin films characterized by a roughness smaller than 1.5 nm, a mosaic spread Δω of 0.1° and an azimuthal alignment ΔΦ of 0.45°.

Structural Characterization and Raman Studies of SrBi2Ta0.8Nb1.2O9 Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
S. Srinivas ◽  
R. R. Das ◽  
J. Mercoda ◽  
E. R. Fachini ◽  
W. Perez ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Growth Conditions ◽  
Oxygen Ions ◽  
Raman Modes ◽  
Deposited Films

AbstractThe effect of growth conditions such as substrate temperature and oxygen partial pressure on the microstructure and properties of pulsed laser deposited SBTN thin films on Si(100) and MgO(100) substrates have been studied. Crystallization of films begins at room temperature but, the obtained phase was non-ferroelectric. The influence of oxygen pressure (150 to 450 mTorr) on crystallinity of the films deposited on Si(100) at 750°C is negligible. XPS studies of as-deposited films reveal that the oxygen vacancies are preferably present near the Bi ions at the Bi2O2 layers and vary with substrate temperature and oxygen partial pressure. Also, XPS studies of Sr 3d core level for SBTN films suggest that the oxygen ions in the Sr(Ta/Nb)2O7 perovskite layers are much more stable than those in the Bi2O2 layers. Micro-Raman studies of SBTN films deposited below 700°C show Raman modes of a non -ferroelectric phase.

Nucleation of Cu(In, Ga)Se2 on Molybdenum Substrates

2003 ◽  
Vol 763 ◽  
Author(s):  
T. Schlenker ◽  
K. Orgassa ◽  
H. W. Schock ◽  
J. H. Werner
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Cluster Formation ◽  
Three Dimensional ◽  
Areal Density ◽  
Growth Conditions ◽  
Exponential Dependence ◽  
Nucleation Behavior ◽  
Substrate Temperatures ◽  
Island Density

AbstractWe investigate growth mechanisms of Cu(In, Ga)Se2 on Mo films on glass, as the typical back contact for Cu(In, Ga)Se2 solar cells. A thermal evaporation process deposits Cu(In, Ga)Se2of nominal 3 nm thickness at different rates R and substrate temperatures TSub. An ultrahigh resolution scanning electron microscope serves to investigate the nucleation behavior. The deposited Cu(In, Ga)Se2 forms three-dimensional isolated nuclei, known as Volmer-Weber growth mode. Deposition rate R and substrate temperature TSub control the areal density n of the Cu(In, Ga)Se2 nuclei. We observe a power law dependence between the island density n and the deposition rate R, and an exponential dependence of the island density n on substrate temperature TSub. The theory of homogeneous nucleation explains the Cu(In, Ga)Se2 cluster formation on polycrystalline Mo and the dependence of the island density on the growth conditions.

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