Mechanisms of Formation of Thin Buried Oxide Layers by Ion Implantation

1987 ◽  
Vol 93 ◽  
Author(s):  
Alice E. White ◽  
K. T. Short ◽  
L. N. Pfeiffer ◽  
K. W. West
Keyword(s):  
Substrate Temperature ◽  
Annealing Temperature ◽  
Oxide Formation ◽  
Thermally Activated ◽  
Buried Oxide ◽  
Annealing Conditions ◽  
Mechanisms Of Formation ◽  
Substrate Temperatures ◽  
Thermally Activated Process

ABSTRACTWe have studied buried oxide formation as a function of implantation and annealing conditions. The layers appear to form via a nucleation and growth process, so the quality of the oxide and the perfection of the overlying crystalline Si layer depend more strongly on the substrate temperature during implantation than on the annealing temperature. Since it is easier to observe the layer formation process in a thin (<1000Å) layer, we concentrated on sub-stoichiometric doses and chose substrate temperatures below 400°C to stay in a homogeneous nucleation regime. Then we varied the annealing temperature from 1150°C to 1407°C. Modeling the coalescence of the oxide layer as a thermally-activated process yields activation energies of approximately 6 eV, suggesting that crystalline damage removal may be the bottleneck for this substrate temperature regime.

Excimer Laser Crystallized Amorphous Silicon Films: Effects of Shot Density and Substrate Temperature

1991 ◽  
Vol 219 ◽  
Author(s):  
R. I. Johnson ◽  
G. B. Anderson ◽  
S. E. Ready ◽  
J. B. Boyce
Keyword(s):  
Energy Density ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Laser Energy ◽  
Silicon Films ◽  
Laser Energy Density ◽  
Laser Crystallization ◽  
Average Grain Size ◽  
Substrate Temperatures

ABSTRACTLaser crystallization of a-Si thin films has been shown to produce materials with enhanced electrical properties and devices that are faster and capable of carrying higher currents. The quality of these polycrystalline films depends on a number of parameters such as laser energy density, shot density, substrate temperature, and the quality of the starting material. We find that the average grain size and transport properties of laser crystallized amorphous silicon films increase substantially with laser energy density, increase only slightly with laser shot density, and are unaffected by substrate temperatures of up to 400°C. The best films are those processed in vacuum but films of fair quality can also be obtained in air and nitrogen atmospheres.

Correlation of Electrical and Physical Properties of SIMOX BOX Affected by Various Implantation Parameters

1996 ◽  
Vol 446 ◽  
Author(s):  
J. U. Yoon ◽  
G. N. Kim ◽  
J‐H Y. Krska ◽  
J. E. Chung ◽  
L. P. Allen ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Substrate Temperature ◽  
High Field ◽  
Beam Current ◽  
Interface Roughness ◽  
Surface Photovoltage ◽  
Buried Oxide ◽  
Current Variation ◽  
The Impact ◽  
Substrate Temperatures

AbstractThe impact of two implant parameters, namely the implant substrate temperature and implant beam current, on the physical and electrical properties of SIMOX buried oxide are investigated. Three implant substrate temperatures, 540 °C, 590 °C, and 640 °C and three beam current, 45 mA, 55 mA, 65 mA, are investigated. Results from thermal conductivity and surface photovoltage measurements show no apparent differences between samples. Results from interface roughness shows a decreasing trend as the substrate temperature and beam current increases. For the samples with different implant temperatures, the high‐field conduction shows an opposite dependence for top‐interface versus substrate injection. This behavior can be explained by the conservation of silicon in the buried oxide. Correlation of surface photovoltage and high‐field conduction shows weak positive dependency while that of interface roughness and high‐field conduction shows dependency only when the sets of temperature variation and beam current variation are decoupled.

The Effect of Annealing Conditions on Magnetron Sputtered Superconducting Tl-Based Thin Films

1989 ◽  
Vol 169 ◽  
Author(s):  
S.H. Liou
Keyword(s):  
Annealing Temperature ◽  
Superconducting Films ◽  
Film Plane ◽  
Major Phase ◽  
X Ray ◽  
Annealing Conditions ◽  
Post Annealing ◽  
Heat Treated ◽  
Post Annealing Temperature

AbstractThe annealing steps have been shown to be a crucial determinant of the quality of Tl‐based superconducting films. In this study, we discuss the formation of the superconducting Tl2Ba2CaCu2O8 and Tl2Ba2Ca2Cu3O10 phases with varied post‐annealing temperature and fixed annealing time. A x‐ray, electron micro‐probe, and scanning electron microscopy were carried out to evaluate the structure of superconducting phases formed for each annealing condition. For films deposited on SrTiO3 substrates and heat‐treated at 870°C for 15 min, the lower Tc phase Tl2Ba2CaCu2O8 becomes a major phase. The films consist of nearly pure Tl2Ba2Ca2Cu3O10 phase with Tc (R=0) in the range of 100K to 118K and c‐axis perpendicular to the film plane were obtained after annealing 880‐890°C for 15 min. These films were epitaxy growth on SrTi03 substrates.

The Influence of Zirconia Substrate Temperature on the Microstructure and Adhesion of Deposited Mg Films

2012 ◽  
Vol 472-475 ◽  
pp. 2834-2838
Author(s):  
Fei Xiong Mao ◽  
Tao Liu ◽  
Shi Wei Liu ◽  
Jing Kun Yu
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Substrate Temperature ◽  
Hexagonal Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Adhesion Performance ◽  
Substrate Temperatures ◽  
Scanning Electron

Mg films were prepared by magnetron sputtering on zirconia substrate. The surface morphology, structure and adhesion performance were determined by scanning electron microscopy (SEM), X-ray diffraction (XRD) and automatic nano scratch tester, respectively. The results show that the Mg films deposited on the substrates at 50 °C, 200 °C, 300 °C are mainly of hexagonal phase with the crystal planes (002) in highly preferred orientation that is weaken with the substrate temperature increased. After annealed at 230 °C, the quality of thin film deposited on the substrate at 50 °C can be improved as crystallizability enhanced and grain size increased. The adhesion of Mg film increases firstly, and then decreases with increasing the substrate temperatures.

Site-Selective Photoluminescence Spectroscopy of Er-Implanted Wurtzite Gan Under Various Annealing Conditions

1998 ◽  
Vol 512 ◽  
Author(s):  
S. Kim ◽  
S. J. Rhee ◽  
X. Li ◽  
J. J. Coleman ◽  
S. G. Bishop
Keyword(s):  
Annealing Temperature ◽  
Broad Band ◽  
Optically Active ◽  
Thermally Activated ◽  
Annealing Temperatures ◽  
Annealing Conditions ◽  
Postimplantation Annealing ◽  
Recombination Centers ◽  
Pl Spectrum ◽  
Site Selective

ABSTRACTThe ˜1540 nm 4I13/2 → 4I15/2 emissions of Er3+ in Er-implanted GaN annealed at temperatures in the 400 to 1000 °C range were investigated to gain a better understanding of the formation and dissociation processes of the various Er3+ sites and the recovery of damage caused by the implantation with increasing annealing temperature (TA). The monotonic increase in the intensity of the broad defect photoluminescence (PL) bands with increasing TA proves that these are stable radiative recombination centers introduced by the implantation and annealing process. These centers cannot be attributed to implantation-induced damage that is removed by postimplantation annealing. Selective wavelength pumping of PL spectra at 6 K reveals the existence of at least nine different Er3+ sites in this Er-implanted semiconductor. Most of these Er3+ PL centers are attributed to complexes of Er atoms with defects and impurities which are thermally activated at different TA. Only one of the nine observed Er3+ PL centers can be pumped by direct 4f absorption and this indicates that it is the highest concentration Er3+ center and it represents most of the optically active Er3+ in the implanted sample. The fact that this Er3+ center cannot be strongly pumped by above-gap light or broad band below-gap absorption indicates that it is an isolated center, i.e. not complexed with defects or impurities. This 4f-pumped PL spectrum appears at annealing temperatures as low as 400°C, and although its intensity increases monotonically with increasing TA, the wavelengths and linewidths of its characteristic peaks are unaltered. The observation of this high quality Er3+ PL spectrum at low annealing temperatures illustrates that the crystalline structure of GaN is not rendered amorphous by the ion implantation. The increase of the PL intensities of the various Er3+ sites with increasing TA is due to the removal of competing nonradiative channels with annealing.

Influence of the Substrate Temperature on the Texture of MgO Films Grown by Ion Beam Assisted Deposition

2005 ◽  
Vol 868 ◽  
Author(s):  
Liliana Stan ◽  
Paul N. Arendt ◽  
Raymond F. DePaula ◽  
Igor Usov ◽  
James R. Groves
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Orientation Distribution ◽  
Beam Current ◽  
Energetic Ions ◽  
Ion Beam Assisted Deposition ◽  
Acceptable Deviation ◽  
Substrate Temperatures ◽  
Deposition Conditions

AbstractThe variation in the substrate temperature during ion beam assisted deposition (IBAD), which employs the use of energetic ions to bombard a growing film, has been shown to influence the quality of crystalline texture in MgO films. Determining the acceptable deviation from the optimum ion to molecule ratio for different substrate temperatures establishes the optimum MgO deposition conditions. For each fixed deposition temperature, a set of samples was produced by varying the ion assist beam current from sample to sample while keeping the deposition rate constant. In this way, the ion to molecule ratio was modified and the range of achieving well textured films was determined. The investigation of the MgO texture dependence on the substrate temperature reveals that the best in-plane alignment is obtained at ˜ 25°C. At this temperature, MgO films with in-plane orientation distribution as low as 3.7° full width at half maximum (FWHM) have been attained. MgO films deposited at temperatures higher than 100°C have broad in-plane alignment. Although, the deposition at the lowest temperature (-150°C) did not improve the in-plane texture, the acceptable deviation from the optimum ion to molecule ratio for achieving biaxially textured films was the largest. As a trend, the acceptable ion to molecule deviation decreases with increasing substrate temperature. This is especially important for continuous IBAD MgO depositions where less restrictive conditions are desired.

Diamond Films Synthesis with a DC Arc Plasma Jet: Effect of Substrate Temperature on Quality of Diamond Films

2011 ◽  
Vol 175 ◽  
pp. 245-248
Author(s):  
Rong Fa Chen ◽  
Liang Gang Dai ◽  
Rui Zhu ◽  
Xian Liang Zhang ◽  
Tao Liu ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Diamond Film ◽  
Diamond Films ◽  
Plasma Jet ◽  
Sem Analysis ◽  
Arc Plasma ◽  
X Ray Diffraction ◽  
Dc Arc ◽  
Substrate Temperatures

. High quality diamond film wafers with different thickness are prepared by high power DC arc plasma jet CVD (DCPJ CVD) method using a CH4/Ar/H2 gas mixture. The effect of substrate temperature on the quality of diamond film was studied with theoretical analysis and experimental investigation. The results indicate that different structures in diamond film may grow with different substrate temperatures. The temperatures of 800°C, 900°C and 1000°C were tested in the experiments. The quality of diamond film showed the best at the temperature of 900°C. Characterization by X-ray diffraction, Raman spectroscopy and SEM analysis are also carried out.

scholarly journals Формирование кристаллических слоев Cu-=SUB=-2-=/SUB=-O и ZnO методом магнетронного распыления и их оптическая характеризация

2018 ◽  
Vol 52 (3) ◽  
pp. 402
Author(s):  
В.Ф. Агекян ◽  
Е.В. Борисов ◽  
А.С. Гудовских ◽  
Д.А. Кудряшов ◽  
А.О. Монастыренко ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Oxide Films ◽  
Optical Methods ◽  
Luminescence Spectra ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zinc Oxide Films ◽  
Quartz Substrates ◽  
Substrate Temperatures

AbstractCopper (I) oxide and zinc oxide films are formed on silicon and glassy quartz substrates by magnetron assisted sputtering. The thickness of the films is tens and hundreds of nanometers. The films are grown at different substrate temperatures and different oxygen pressures in the working chamber. The film samples are studied by the X-ray diffraction technique, scanning electron microscopy, and optical methods. It is established that an increase in the substrate temperature yields a change in the surface morphology of copper (I) oxide films towards the formation of well-pronounced crystallites. The reflectance and Raman spectra suggest that the quality of such films is close to that of bulk Cu_2O crystals produced by the oxidation of copper. As concerns ZnO films, an increase in the substrate temperature and an increase in the partial oxygen pressure make it possible to produce films, for which a sharp exciton structure is observed in the reflectance spectra and the emission of excitons bound at donors is observed in the luminescence spectra.

Observations on the growth of barium bismuth oxide thin films

1992 ◽  
Vol 50 (1) ◽  
pp. 76-77
Author(s):  
M G. Norton ◽  
E.S. Hellman ◽  
E.H. Hartford ◽  
C.B. Carter
Keyword(s):  
Substrate Temperature ◽  
Deposition Process ◽  
Nucleation Layer ◽  
Second Stage ◽  
Device Applications ◽  
High Transition ◽  
Substrate Temperatures ◽  
Oriented Material ◽  
Barium Bismuth ◽  
Superconductor Device

The bismuthates (for example, Ba1-xKxBiO3) represent a class of high transition temperature superconductors. The lack of anisotropy and the long coherence length of the bismuthates makes them technologically interesting for superconductor device applications. To obtain (100) oriented Ba1-xKxBiO3 films on (100) oriented MgO, a two-stage deposition process is utilized. In the first stage the films are nucleated at higher substrate temperatures, without the potassium. This process appears to facilitate the formation of the perovskite (100) orientation on (100) MgO. This nucleation layer is typically between 10 and 50 nm thick. In the second stage, the substrate temperature is reduced and the Ba1-xKxBiO3 is grown. Continued growth of (100) oriented material is possible at the lower substrate temperature.

scholarly journals Experimental Investigation on Micro Deep Drawing of Stainless Steel Foils with Different Microstructural Characteristics

2021 ◽  
Vol 34 (1) ◽  
Author(s):  
Jingwei Zhao ◽  
Tao Wang ◽  
Fanghui Jia ◽  
Zhou Li ◽  
Cunlong Zhou ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Deep Drawing ◽  
Annealing Temperature ◽  
Localized Deformation ◽  
Microstructural Characteristics ◽  
Height Profile ◽  
Annealing Temperatures ◽  
Micro Deep Drawing ◽  
Profile Distribution

AbstractIn the present work, austenitic stainless steel (ASS) 304 foils with a thickness of 50 µm were first annealed at temperatures ranging from 700 to 1100 ℃ for 1 h to obtain different microstructural characteristics. Then the effects of microstructural characteristics on the formability of ASS 304 foils and the quality of drawn cups using micro deep drawing (MDD) were studied, and the mechanism involved was discussed. The results show that the as-received ASS 304 foil has a poor formability and cannot be used to form a cup using MDD. Serious wrinkling problem occurs on the drawn cup, and the height profile distribution on the mouth and the symmetry of the drawn cup is quite non-uniform when the annealing temperature is 700 ℃. At annealing temperatures of 900 and 950 ℃, the drawn cups are both characterized with very few wrinkles, and the distribution of height profile, symmetry and mouth thickness are uniform on the mouths of the drawn cups. The wrinkling becomes increasingly significant with a further increase of annealing temperature from 950 to 1100 ℃. The optimal annealing temperatures obtained in this study are 900 and 950 ℃ for reducing the generation of wrinkling, and therefore improving the quality of drawn cups. With non-optimized microstructure, the distribution of the compressive stress in the circumferential direction of the drawn foils becomes inhomogeneous, which is thought to be the cause of the occurrence of localized deformation till wrinkling during MDD.

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