Oxide trapping under spatially variable oxide electric field in the metal‐oxide‐silicon structure

1987 ◽  
Vol 51 (6) ◽  
pp. 463-465 ◽  
Author(s):  
E. Avni ◽  
J. Shappir
Keyword(s):  
Electric Field ◽  
Metal Oxide ◽  
Silicon Structure ◽  
Metal Oxide Silicon

scholarly journals Nanoparticle-modified metal–oxide–silicon structure enhancing silicon band-edge electroluminescence to near-lasing action

2002 ◽  
Vol 27 (9) ◽  
pp. 713 ◽  
Author(s):  
Ching-Fuh Lin ◽  
Peng-Fei Chung ◽  
Miin-Jang Chen ◽  
Wei-Fang Su
Keyword(s):  
Metal Oxide ◽  
Band Edge ◽  
Silicon Structure ◽  
Metal Oxide Silicon

Positron Beam Technique For The Study Of Defects At The Si/SiO2 Interface Of A Polysilicon Gated MOS System

1996 ◽  
Vol 442 ◽  
Author(s):  
M. Clement ◽  
J. M. M. De Nijs ◽  
H. Schut ◽  
A. Van Veen ◽  
R. Mallee ◽  
...  
Keyword(s):  
Electric Field ◽  
Metal Oxide ◽  
Positron Beam ◽  
Polysilicon Gate ◽  
Polysilicon Layer ◽  
Metal Oxide Silicon ◽  
Beam Technique

AbstractThis work demonstrates that positrons implanted into a 60 nm n-type polysilicon layer with large grains, can be pushed out of this layer by an externally induced electric field. In the case of a metal-oxide-silicon (MOS) system with a such a polysilicon gate, polysilicon-implanted positrons can be efficiently transported towards the SiO2/Si interface where they all are collected. This technique offers new and interesting possibilities to study defects at the SiO2/Si interface of technologically important MOS systems.

Electron tunneling through a double barrier in a reverse-biased metal-oxide-silicon structure

2002 ◽  
Vol 36 (8) ◽  
pp. 889-894 ◽  
Author(s):  
G. G. Kareva ◽  
M. I. Vexler ◽  
I. V. Grekhov ◽  
A. F. Shulekin
Keyword(s):  
Metal Oxide ◽  
Electron Tunneling ◽  
Silicon Structure ◽  
Double Barrier ◽  
Metal Oxide Silicon
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