Silicon Growth Rate Enhancement Using Trisilane in a Laser Direct-Writing Technique

1995 ◽  
Vol 397 ◽  
Author(s):  
S. Boughaba ◽  
G. Auvert
Keyword(s):  
Surface Temperature ◽  
Gas Pressure ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Multilayered Structures ◽  
Deposition Rates ◽  
Micron Size ◽  
Ion Laser ◽  
Silicon Growth ◽  
Argon Ion

ABSTRACTAn argon-ion laser based direct-writing technique was used to deposit micron-size silicon lines from the decomposition of silane (SiH4) and trisilane (Si3H8) gases. The substrates used were 0.1 μrn polysilicon/1 μ.m silicon dioxide/<100> monosilicon multilayered structures. The vertical silicon deposition rate was investigated as a function of the laser-induced surface temperature and gas pressure. For temperatures ranging between 1000 and 1410 °C, the pressure was varied in the range 5-250 mbar and 0.1-30 mbar for SiH4 and Si3H8, respectively. For both gases, three growth regimes could be distinguished according to precursor pressure. The deposition rates achieved using trisilane are far higher than those obtained with silane in spite of the use of a reduced gas pressure range. For a laser-induced surface temperature of 1300 °C and a precursor pressure of 10 mbar, the deposition rates achieved using SiH4 and Si3H8 are, respectively, 0.42 and 20 μ.m/s, representing an enhancement factor of 50 with the later.

Laser Cvd of Tungsten on Silicon Oxynitride

1991 ◽  
Vol 236 ◽  
Author(s):  
R. Izquierdo ◽  
A. Lecours ◽  
M. Meunier
Keyword(s):  
Silicon Oxynitride ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Good Adhesion ◽  
Columnar Growth ◽  
Growth Structure ◽  
Ion Laser ◽  
Laser Cvd ◽  
Argon Ion ◽  
Deposition Conditions

AbstractLaser direct writing of tungsten from WF6 onto 0.6 μm thick films of silicon oxynitride on silicon using an argon-ion laser beam is investigated. XPS studies show that WF6 is chemisorbed on the oxynitride surface and that nitrogen plays a role in this adsorption. Deposits have good adhesion, columnar growth structure and resistivities ranging from 13 to 25 μΩ-cm. The deposition conditions significantly affect the deposit morphology and profile. In particular, increasing the hydrogen pressure increases the linewidth but reduces the thickness. Mass transport phenomena are invoked to explain these effects.

Laser-Induced Thermal Decomposition of Platinum Metallo-Organic Films

1986 ◽  
Vol 75 ◽  
Author(s):  
A. Gupta ◽  
R. C. Sausa ◽  
J. R. White
Keyword(s):  
Thermal Decomposition ◽  
Quartz Substrate ◽  
Organic Films ◽  
Organic Film ◽  
Electroless Copper Plating ◽  
Micron Size ◽  
Ion Laser ◽  
Power And Energy ◽  
Argon Ion

AbstractThe focused output from an argon ion laser (514 nm) has been used to pattern micron-size platinum features by decomposition of spun-on metallo-organic film on quartz substrate. The role of laser power and energy density on the thermal decomposition of the film is studied using pulsed and cw laser irradiation. Transient reflectivity has been used as a probe to study the reaction steps involved in the decomposition of the metallo-organic containing film. Preliminary results on the use of the platinum features as seed layer for electroless copper plating is presented.

Periodic Structure Formation During Laser Direct-Writing of Palladium Acetate Films: An Optically Regulated Mechanism

1987 ◽  
Vol 101 ◽  
Author(s):  
L. Baufay ◽  
M. E. Gross
Keyword(s):  
Optical Absorption ◽  
Periodic Structure ◽  
Reaction Rate ◽  
Amorphous Semiconductors ◽  
Palladium Acetate ◽  
Complex Relationship ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Wide Range ◽  
Micron Size

ABSTRACTLaser direct-writing of micron-size metallic features from Pd acetate film precursors is achieved using a scanned cw Ar+ laser. Marked periodic structure is observed in these features under a wide range of exposure conditions. A model based on laser reflectivity and transmittance measurements has been developed to describe the formation of the periodic structure. The model takes into account a complex relationship between optical absorption, laser-induced heating and reaction rate. The decomposition of Pd acetate to metal is endothermic and, therefore, this system differs fundamentally from the “explosive” crystallisation of amorphous semiconductors.

Growth Mechanism of Direct Writing of Silicon in AR+ Laser CVD

1988 ◽  
Vol 129 ◽  
Author(s):  
Takeshi Nagahori ◽  
Satoru Matsumoto
Keyword(s):  
Direct Writing ◽  
Large Area ◽  
Arrhenius Behavior ◽  
Average Growth Rate ◽  
Average Growth ◽  
Thickness Profile ◽  
Ion Laser ◽  
Laser Cvd ◽  
Argon Ion ◽  
Good Agreement

ABSTRACTSilicon lines are directly written using argon ion laser CVD. The thickness profile of the line has a Gaussian-like shape. The thickness profile is calculated with the model based on Arrhenius behavior. A good agreement is obtained.The effective exposure time is used to analyze the direct writing process. Using it, the average growth rate is estimated to be about 100 times faster than that of conventional large area CVD with the activation energy of 2.4± 0.4eV.

Direct Writing of Copper Lines From Copper Formate Film

1987 ◽  
Vol 101 ◽  
Author(s):  
Arunava Gupta ◽  
Rangarajan Jagannathan
Keyword(s):  
Temperature Distribution ◽  
Silicon Substrate ◽  
Decomposition Temperature ◽  
Silicon Substrates ◽  
Direct Writing ◽  
Rapid Decomposition ◽  
Copper Formate ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

ABSTRACTThe focused output from an argon ion laser (514 nm) has been used for direct writing of copper by photothermal decomposition of copper formate film on quartz and silicon substrates. The low decomposition temperature of the metallo-organic (∼200°C) allows deposition of fairlys thick copper lines at writing speeds as high as 10 mm/sec. The processing can be done in air since the rapid decomposition and cooling under scanning condition results in minimal oxidation of the deposited copper. The temperature distribution produced during laser writing on silicon substrate has been calculated to help explain some of the observed results.

Fabrication and Testing of a Novel Microelectromechnical Device for the Study of Boiling Bubble Dynamics

2003 ◽  
Author(s):  
Saeed Moghaddam ◽  
Kenneth T. Kiger ◽  
Jean-Marc Henriette ◽  
Michael Ohadi
Keyword(s):  
Surface Temperature ◽  
High Speed ◽  
Sensor Array ◽  
Bubble Dynamics ◽  
Ccd Camera ◽  
Ion Laser ◽  
Net Flux ◽  
Argon Ion ◽  
The Heat Transfer Coefficient ◽  
Wall Surface Temperature

An array of 44 resistance temperature sensors with a radial resolution of 35 μm was fabricated around a re-entrant cavity (3 μm mouth diameter) on a thin silicon diaphragm with the intended purpose of obtaining highly resolved spatial and temporal measurements of the wall surface temperature during the boiling process. An Argon ion laser beam was used to provide a constant net flux of thermal energy to the backside of the diaphragm underneath the cavity and sensor area. This microsystem initiates and grows a single bubble at the center of the radial sensor array; all while the temperature variation underneath the bubble region during growth, departure, and rewetting is being measured with a frequency of 10 kHz. A high-speed CCD camera capable of taking over 3700 pictures per second is used to monitor the growth rate and departure process of the bubble from the surface, and correlated with the surface temperature measurement. The resulting temperature data can then be used to calculate the variation of the heat transfer coefficient under the bubble during the process of growth, departure, and rewetting. This experimental study provided unique experimental data to evaluate varieties of theories and speculations about the dynamics of bubbling at a microscale level. The focus of the current paper is on the details of the apparatus development and fabrication.

Laser Direct Writing of Optical Interconnects in Polyimides and Sio2:TiO2 Coatings

1989 ◽  
Vol 158 ◽  
Author(s):  
D.W. Hewak ◽  
H. Jerominek
Keyword(s):  
Refractive Index ◽  
Optical Interconnects ◽  
Light Propagation ◽  
Guided Wave ◽  
Propagation Loss ◽  
Transmission Spectra ◽  
Thermal Curing ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Ion Laser

ABSTRACTCommercially available polyimides and SiO2:TiO2 coatings are experimentally studied for their potential application in optical guided-wave interconnect networks. Optical properties are measured, including transmission spectra, refractive index and loss, with the aim of determining the materials most suited for this application. On the most promising candidates, direct writing of strip waveguides with Ar-ion laser at 514.5 and 457.9 nm was performed. Localized thermal curing by writing with speeds up to 250 microns per second allows the achievement of multimode guiding structures. Light propagation loss measurements reveal that attenuation in strip waveguides is of the same order as in slab structures of the same material, typically 5-10 dB/cm at 633 nm.

Laser direct writing of micron‐size silicon lines from trisilane

1995 ◽  
Vol 78 (11) ◽  
pp. 6791-6796 ◽  
Author(s):  
S. Boughaba ◽  
G. Auvert
Keyword(s):  
Direct Writing ◽  
Laser Direct Writing ◽  
Micron Size

Mass Spectrometric Study of Laser-Induced Chemical Vapor Deposition of Gold

1987 ◽  
Vol 101 ◽  
Author(s):  
Toivo T. Kodas ◽  
Paul B. Comita
Keyword(s):  
Surface Temperature ◽  
Reaction Rate ◽  
Chemical Vapor ◽  
Mass Spectrometric Study ◽  
Reaction Products ◽  
Quadrupole Mass ◽  
Product Concentration ◽  
Ion Laser ◽  
Phase Sensitive ◽  
Argon Ion

ABSTRACTA modulated surface temperature technique was used to study the surface chemical reactions occurring during the laser-assisted deposition of gold from dimethyl gold hexafluoroacetylacetonate. An argon ion laser was chopped and used to modulate the surface temperature on an area roughly 1 mm in diameter on an alumina substrate. Reactant and products of the photothermal reaction were sampled through an orifice located at the center of the deposit and were then introduced directly into a quadrupole mass filter. Since the reactant concentration at the surface decreased when the laser turned on while the product concentration at the surface increased when the laser turned on, modulating the surface reaction rate and employing phase-sensitive detection allowed the identification of reaction products.

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