Laser Cvd of Tungsten on Silicon Oxynitride

1991 ◽  
Vol 236 ◽  
Author(s):  
R. Izquierdo ◽  
A. Lecours ◽  
M. Meunier
Keyword(s):  
Silicon Oxynitride ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Good Adhesion ◽  
Columnar Growth ◽  
Growth Structure ◽  
Ion Laser ◽  
Laser Cvd ◽  
Argon Ion ◽  
Deposition Conditions

AbstractLaser direct writing of tungsten from WF6 onto 0.6 μm thick films of silicon oxynitride on silicon using an argon-ion laser beam is investigated. XPS studies show that WF6 is chemisorbed on the oxynitride surface and that nitrogen plays a role in this adsorption. Deposits have good adhesion, columnar growth structure and resistivities ranging from 13 to 25 μΩ-cm. The deposition conditions significantly affect the deposit morphology and profile. In particular, increasing the hydrogen pressure increases the linewidth but reduces the thickness. Mass transport phenomena are invoked to explain these effects.

Silicon Growth Rate Enhancement Using Trisilane in a Laser Direct-Writing Technique

1995 ◽  
Vol 397 ◽  
Author(s):  
S. Boughaba ◽  
G. Auvert
Keyword(s):  
Surface Temperature ◽  
Gas Pressure ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Multilayered Structures ◽  
Deposition Rates ◽  
Micron Size ◽  
Ion Laser ◽  
Silicon Growth ◽  
Argon Ion

ABSTRACTAn argon-ion laser based direct-writing technique was used to deposit micron-size silicon lines from the decomposition of silane (SiH4) and trisilane (Si3H8) gases. The substrates used were 0.1 μrn polysilicon/1 μ.m silicon dioxide/<100> monosilicon multilayered structures. The vertical silicon deposition rate was investigated as a function of the laser-induced surface temperature and gas pressure. For temperatures ranging between 1000 and 1410 °C, the pressure was varied in the range 5-250 mbar and 0.1-30 mbar for SiH4 and Si3H8, respectively. For both gases, three growth regimes could be distinguished according to precursor pressure. The deposition rates achieved using trisilane are far higher than those obtained with silane in spite of the use of a reduced gas pressure range. For a laser-induced surface temperature of 1300 °C and a precursor pressure of 10 mbar, the deposition rates achieved using SiH4 and Si3H8 are, respectively, 0.42 and 20 μ.m/s, representing an enhancement factor of 50 with the later.

Growth Mechanism of Direct Writing of Silicon in AR+ Laser CVD

1988 ◽  
Vol 129 ◽  
Author(s):  
Takeshi Nagahori ◽  
Satoru Matsumoto
Keyword(s):  
Direct Writing ◽  
Large Area ◽  
Arrhenius Behavior ◽  
Average Growth Rate ◽  
Average Growth ◽  
Thickness Profile ◽  
Ion Laser ◽  
Laser Cvd ◽  
Argon Ion ◽  
Good Agreement

ABSTRACTSilicon lines are directly written using argon ion laser CVD. The thickness profile of the line has a Gaussian-like shape. The thickness profile is calculated with the model based on Arrhenius behavior. A good agreement is obtained.The effective exposure time is used to analyze the direct writing process. Using it, the average growth rate is estimated to be about 100 times faster than that of conventional large area CVD with the activation energy of 2.4± 0.4eV.

Direct Writing of Copper Lines From Copper Formate Film

1987 ◽  
Vol 101 ◽  
Author(s):  
Arunava Gupta ◽  
Rangarajan Jagannathan
Keyword(s):  
Temperature Distribution ◽  
Silicon Substrate ◽  
Decomposition Temperature ◽  
Silicon Substrates ◽  
Direct Writing ◽  
Rapid Decomposition ◽  
Copper Formate ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

ABSTRACTThe focused output from an argon ion laser (514 nm) has been used for direct writing of copper by photothermal decomposition of copper formate film on quartz and silicon substrates. The low decomposition temperature of the metallo-organic (∼200°C) allows deposition of fairlys thick copper lines at writing speeds as high as 10 mm/sec. The processing can be done in air since the rapid decomposition and cooling under scanning condition results in minimal oxidation of the deposited copper. The temperature distribution produced during laser writing on silicon substrate has been calculated to help explain some of the observed results.

Laser Direct Writing of Optical Interconnects in Polyimides and Sio2:TiO2 Coatings

1989 ◽  
Vol 158 ◽  
Author(s):  
D.W. Hewak ◽  
H. Jerominek
Keyword(s):  
Refractive Index ◽  
Optical Interconnects ◽  
Light Propagation ◽  
Guided Wave ◽  
Propagation Loss ◽  
Transmission Spectra ◽  
Thermal Curing ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Ion Laser

ABSTRACTCommercially available polyimides and SiO2:TiO2 coatings are experimentally studied for their potential application in optical guided-wave interconnect networks. Optical properties are measured, including transmission spectra, refractive index and loss, with the aim of determining the materials most suited for this application. On the most promising candidates, direct writing of strip waveguides with Ar-ion laser at 514.5 and 457.9 nm was performed. Localized thermal curing by writing with speeds up to 250 microns per second allows the achievement of multimode guiding structures. Light propagation loss measurements reveal that attenuation in strip waveguides is of the same order as in slab structures of the same material, typically 5-10 dB/cm at 633 nm.

Wavelength tunable fiber Bragg gratings fabricated by stress annealing assisted femtosecond laser direct writing

2021 ◽  
Vol 61 ◽  
pp. 102427
Author(s):  
Xiaoyan Sun ◽  
Zikun Chang ◽  
Li Zeng ◽  
Xinran Dong ◽  
Youwang Hu ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Fiber Bragg Gratings ◽  
Bragg Gratings ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Wavelength Tunable

Micropatterned Cell‐Repellent Interface Using Femtosecond Laser Direct Writing to Engineer Controlled Cell Organization

2021 ◽  
pp. 2100178
Author(s):  
Wenguang Yang ◽  
Honghui Chu ◽  
Shuxiang Cai ◽  
Wenfeng Liang ◽  
Haibo Yu ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Cell Organization
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