Direct Writing of Copper Lines From Copper Formate Film

1987 ◽  
Vol 101 ◽  
Author(s):  
Arunava Gupta ◽  
Rangarajan Jagannathan
Keyword(s):  
Temperature Distribution ◽  
Silicon Substrate ◽  
Decomposition Temperature ◽  
Silicon Substrates ◽  
Direct Writing ◽  
Rapid Decomposition ◽  
Copper Formate ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

ABSTRACTThe focused output from an argon ion laser (514 nm) has been used for direct writing of copper by photothermal decomposition of copper formate film on quartz and silicon substrates. The low decomposition temperature of the metallo-organic (∼200°C) allows deposition of fairlys thick copper lines at writing speeds as high as 10 mm/sec. The processing can be done in air since the rapid decomposition and cooling under scanning condition results in minimal oxidation of the deposited copper. The temperature distribution produced during laser writing on silicon substrate has been calculated to help explain some of the observed results.

Laser Induced Etching for Generation of Si Nanocrystals and Spectroscopic Investigation of Morphology

2005 ◽  
Vol 23 ◽  
pp. 43-46
Author(s):  
H.S. Mavi ◽  
S. Rath ◽  
Arun Shukla
Keyword(s):  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Laser Wavelength ◽  
Interconnected Network ◽  
Substrate Type ◽  
Argon Ion Laser ◽  
Si Nanocrystals ◽  
Ion Laser ◽  
Laser Induced Etching ◽  
Argon Ion

Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.

A Current Conduction Mechanism in Laser Recrystallized Silicon Metal-Oxide-Semiconductor Transistors

1983 ◽  
Vol 23 ◽  
Author(s):  
Han-Sheng Lee
Keyword(s):  
Conduction Mechanism ◽  
Single Crystal Silicon ◽  
Silicon Films ◽  
Oxide Semiconductor ◽  
Silicon Substrates ◽  
Mos Transistors ◽  
Crystal Silicon ◽  
Ion Laser ◽  
Argon Ion ◽  
A Current

ABSTRACTN-channel MOS transistors were fabricated on silicon films that had been recrystallized by an argon ion laser at different power levels. These transistors showed electrical characteristics similar, but somewhat inferior to those devices fabricated on single crystal silicon substrates. These differences are attributed to the presence of trapping states at the grain boundaries of the crystallites in the recrystallized silicon. A coulombic scattering model is presented to explain these differences. In the case of films annealed at low laser power, an additional factor of nonuniform trap state distribution is invoked to explain device characteristics. This model provides an adequate explanation for the observed transport properties of transistors fabricated from recrystallized silicon films.

Electron temperatures in a segmented-metal argon-ion laser

1972 ◽  
Vol 5 (10) ◽  
pp. 1807-1814 ◽  
Author(s):  
A Maitland ◽  
J C L Cornish
Keyword(s):  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

scholarly journals Spectroscopic Properties of Photoproduct of Hematoporphyrin Derivative Oligomer by Photoradiation of Argon-ion Laser

1988 ◽  
Vol 8 (4) ◽  
pp. 3-9
Author(s):  
Norio MIYOSHI ◽  
Takahiro SEKI ◽  
Shuichi KINOSHITA ◽  
Takashi KUSHIDA ◽  
Tsuyoshi NISHIZAKA ◽  
...  
Keyword(s):  
Spectroscopic Properties ◽  
Hematoporphyrin Derivative ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

scholarly journals Endoscopic phototherapy using argon ion laser for gastrointestinal tumors

1982 ◽  
Vol 3 (1) ◽  
pp. 35-38
Author(s):  
Masatoshi Esaki ◽  
Hideo Hiratsuka ◽  
Mamoru Hiyama ◽  
Osamu Ueda ◽  
Yukio Toda ◽  
...  
Keyword(s):  
Gastrointestinal Tumors ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

CW ruby laser pumped by an argon ion laser

1977 ◽  
Vol 13 (10) ◽  
pp. 808-809 ◽  
Author(s):  
M. Birnbaum ◽  
A. Tucker ◽  
C. Fincher
Keyword(s):  
Ruby Laser ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion
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