Laser-Induced Thermal Decomposition of Platinum Metallo-Organic Films

1986 ◽  
Vol 75 ◽  
Author(s):  
A. Gupta ◽  
R. C. Sausa ◽  
J. R. White
Keyword(s):  
Thermal Decomposition ◽  
Quartz Substrate ◽  
Organic Films ◽  
Organic Film ◽  
Electroless Copper Plating ◽  
Micron Size ◽  
Ion Laser ◽  
Power And Energy ◽  
Argon Ion

AbstractThe focused output from an argon ion laser (514 nm) has been used to pattern micron-size platinum features by decomposition of spun-on metallo-organic film on quartz substrate. The role of laser power and energy density on the thermal decomposition of the film is studied using pulsed and cw laser irradiation. Transient reflectivity has been used as a probe to study the reaction steps involved in the decomposition of the metallo-organic containing film. Preliminary results on the use of the platinum features as seed layer for electroless copper plating is presented.

Silicon Growth Rate Enhancement Using Trisilane in a Laser Direct-Writing Technique

1995 ◽  
Vol 397 ◽  
Author(s):  
S. Boughaba ◽  
G. Auvert
Keyword(s):  
Surface Temperature ◽  
Gas Pressure ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Multilayered Structures ◽  
Deposition Rates ◽  
Micron Size ◽  
Ion Laser ◽  
Silicon Growth ◽  
Argon Ion

ABSTRACTAn argon-ion laser based direct-writing technique was used to deposit micron-size silicon lines from the decomposition of silane (SiH4) and trisilane (Si3H8) gases. The substrates used were 0.1 μrn polysilicon/1 μ.m silicon dioxide/<100> monosilicon multilayered structures. The vertical silicon deposition rate was investigated as a function of the laser-induced surface temperature and gas pressure. For temperatures ranging between 1000 and 1410 °C, the pressure was varied in the range 5-250 mbar and 0.1-30 mbar for SiH4 and Si3H8, respectively. For both gases, three growth regimes could be distinguished according to precursor pressure. The deposition rates achieved using trisilane are far higher than those obtained with silane in spite of the use of a reduced gas pressure range. For a laser-induced surface temperature of 1300 °C and a precursor pressure of 10 mbar, the deposition rates achieved using SiH4 and Si3H8 are, respectively, 0.42 and 20 μ.m/s, representing an enhancement factor of 50 with the later.

scholarly journals The underappreciated role of nonvolatile cations on aerosol ammonium-sulfate molar ratios

2017 ◽  
Author(s):  
Hongyu Guo ◽  
Athanasios Nenes ◽  
Rodney J. Weber
Keyword(s):  
Gas Phase ◽  
Ammonium Sulfate ◽  
Organic Aerosol ◽  
Organic Films ◽  
Organic Film ◽  
Aerosol Chemistry ◽  
Molar Ratios ◽  
Aerosol Acidity ◽  
Aerosol Mass

Abstract. Overprediction of fine particle ammonium-sulfate molar ratios (R) by thermodynamic models is suggested as evidence for an organic film that only inhibits the equilibration of gas phase ammonia (but not water or nitric acid) with aerosol sulfate and questions the equilibrium assumption long thought to apply for submicron aerosol. The ubiquity of such organic films implies significant impacts on aerosol chemistry. We test the organic film hypothesis by analyzing ambient observations with a thermodynamic model and find that R and ammonia partitioning can be accurately reproduced when small amounts of nonvolatile cations (NVC), consistent with observations, are considered in the thermodynamic analysis. Exclusion of NVCs results in predicted R consistently near 2. The error in R is positively correlated with NVC and not organic aerosol mass fraction or concentration. These results strongly challenge the postulated ability of organic films to perturb aerosol acidity or prevent ammonia from achieving gas-particle equilibrium for the conditions considered.

Laser Induced Etching for Generation of Si Nanocrystals and Spectroscopic Investigation of Morphology

2005 ◽  
Vol 23 ◽  
pp. 43-46
Author(s):  
H.S. Mavi ◽  
S. Rath ◽  
Arun Shukla
Keyword(s):  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Laser Wavelength ◽  
Interconnected Network ◽  
Substrate Type ◽  
Argon Ion Laser ◽  
Si Nanocrystals ◽  
Ion Laser ◽  
Laser Induced Etching ◽  
Argon Ion

Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.

A Current Conduction Mechanism in Laser Recrystallized Silicon Metal-Oxide-Semiconductor Transistors

1983 ◽  
Vol 23 ◽  
Author(s):  
Han-Sheng Lee
Keyword(s):  
Conduction Mechanism ◽  
Single Crystal Silicon ◽  
Silicon Films ◽  
Oxide Semiconductor ◽  
Silicon Substrates ◽  
Mos Transistors ◽  
Crystal Silicon ◽  
Ion Laser ◽  
Argon Ion ◽  
A Current

ABSTRACTN-channel MOS transistors were fabricated on silicon films that had been recrystallized by an argon ion laser at different power levels. These transistors showed electrical characteristics similar, but somewhat inferior to those devices fabricated on single crystal silicon substrates. These differences are attributed to the presence of trapping states at the grain boundaries of the crystallites in the recrystallized silicon. A coulombic scattering model is presented to explain these differences. In the case of films annealed at low laser power, an additional factor of nonuniform trap state distribution is invoked to explain device characteristics. This model provides an adequate explanation for the observed transport properties of transistors fabricated from recrystallized silicon films.

Electron temperatures in a segmented-metal argon-ion laser

1972 ◽  
Vol 5 (10) ◽  
pp. 1807-1814 ◽  
Author(s):  
A Maitland ◽  
J C L Cornish
Keyword(s):  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

Role of silver compounds in promoting the thermal decomposition of ammonium perchlorate

1986 ◽  
Vol 1 (3) ◽  
pp. 235-251 ◽  
Author(s):  
Andrew K. Galwey ◽  
Mohamed A. Mohamed ◽  
David S. Cromie
Keyword(s):  
Thermal Decomposition ◽  
Ammonium Perchlorate ◽  
Silver Compounds

The role of anhydrous zinc nitrate in the thermal decomposition of the zinc hydroxy nitrates Zn5(OH)8(NO3)2·2H2O and ZnOHNO3·H2O

2007 ◽  
Vol 180 (4) ◽  
pp. 1171-1179 ◽  
Author(s):  
Timothy Biswick ◽  
William Jones ◽  
Alexandra Pacuła ◽  
Ewa Serwicka ◽  
Jerzy Podobinski
Keyword(s):  
Thermal Decomposition ◽  
Zinc Nitrate
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