Preparation Of Low-Density Xerogels At Ambient Pressure For Low K Dielectrics

1995 ◽  
Vol 381 ◽  
Author(s):  
D. M. Smith ◽  
J. Anderson ◽  
C. C. Cho ◽  
G. P. Johnston ◽  
S. P. Jeng
Keyword(s):  
Dielectric Constant ◽  
Ambient Pressure ◽  
Supercritical Drying ◽  
Temperature Limit ◽  
Ambient Pressure Drying ◽  
Low Dielectric Constant ◽  
Low Density ◽  
Silica Xerogels ◽  
High Temperature Limit ◽  
Low Dielectric

AbstractLow density silica xerogels have many properties which suggest their use as a low dielectric constant material. Recent process improvements to control capillary pressure and strength by employing aging and pore chemistry modification, such that shrinkage is minimal during ambient pressure drying, have eliminated the need for supercritical drying. Although xerogels offer advantages for intermetal dielectric (IMD) applications because of their low dielectric constant (<2), high temperature limit, and compatibility with existing microelectronics precursors and processes, they suffer from unanswered questions. These include: 1) are all pores smaller than microelectronics features, 2) what are their mechanical properties (for processing and particle generation), and 3) what is their thermal stability. We have produced bulk xerogels under similar conditions to those used for films and studied the effect of density on the pore size distribution and bulk modulus.

Rapid Thermal Processing of Hydrogen Silsesquioxane for Low Dielectric Constant Performance

1999 ◽  
Vol 565 ◽  
Author(s):  
J. N. Bremmer ◽  
D. Gray ◽  
Y. Liu ◽  
K. Gruszynski ◽  
S. Marcus
Keyword(s):  
Dielectric Constant ◽  
Thermal Processing ◽  
Low Dielectric Constant ◽  
Process Conditions ◽  
Low Density ◽  
Hydrogen Silsesquioxane ◽  
Thermal Cure ◽  
Cure Process ◽  
Low Dielectric ◽  
Low K

AbstractLow dielectric constant hydrogen silsesquioxane films were achieved by rapid thermal cure processing with production viable equipment. A reduced dielectric constant of k = 2.5–2.6 is demonstrated by optimizing rapid thermal cure process conditions to produce low density hydrogen silsesquioxane thin films. This is a significant reduction relative to production proven furnace cure processed hydrogen silsesquioxane with k = 2.9. Concurrent with reduced k performance is a characteristic film expansion which contributes to formation of a low density structure. A mechanism for film expansion and relevance to low k performance is described; and issues relative to integration of rapid thermal processed low k hydrogen silsesquioxane are discussed.

Effect of material properties on integration damage in organosilicate glass films

2001 ◽  
Vol 16 (12) ◽  
pp. 3335-3338 ◽  
Author(s):  
E. Todd Ryan ◽  
Jeremy Martin ◽  
Kurt Junker ◽  
Jeff Wetzel ◽  
David W. Gidley ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Material Properties ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Low Density ◽  
Etch Patterns ◽  
Low Dielectric ◽  
Organosilicate Glass

Most organosilicate glass (OSG), low dielectric constant (low-κ) films contain Si–R groups, where R is an organic moiety such as −CH3. The organic component is susceptible to the chemically reactive plasmas used to deposit cap layers, etch patterns, and ash photoresist. This study compares a spin-on, mesoporous OSG film with a completely connected pore structure to both its nonmesoporous counterpart and to another low-density OSG film deposited by plasma-enhanced chemical vapor deposition. The results show that the film with connected pores was much more susceptible to integration damage than were the nonmesoporous OSG films.

Preparation and Characterization of High Porosity Si02 Xerogels for Low k Dielectrics

1999 ◽  
Vol 565 ◽  
Author(s):  
M. T. Colomer
Keyword(s):  
Dielectric Constant ◽  
Sol Gel ◽  
Nitrogen Adsorption ◽  
Low Dielectric Constant ◽  
High Porosity ◽  
Silica Xerogels ◽  
Particulate Suspensions ◽  
Low Dielectric ◽  
Intermetal Dielectric ◽  
Low K

AbstractDue to its low dielectric constant, high porosity SiO2 is a potential intermetal dielectric (IMD) film for sub-half micron devices. High porosity SiO2 xerogels with a low dielectric constant were prepared by a sol-gel method. Basic and mixtures of SiO2 sols (acid/base) aqueous particulate suspensions were employed using TEOS as a precursor.Porosity values up to 55% could be obtained for the silica xerogels calcined at 250°C. The porosity values were estimated by means of nitrogen adsorption (BET). The dielectric constant was directly measured using an impedance analyzer and also calculated from the nitrogen adsorption measurements. Both techniques were in good agreement and resulted in a dielectric constant value of 2.32 for xerogels having the highest porosity.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

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