Preparation of low density poly(methylsilsesquioxane)s for LSI interlayer dielectrics with low dielectric constant. Fabrication of Ångstrom size pores prepared by baking trifluoropropylsilyl copolymers

1999 ◽  
Vol 9 (2) ◽  
pp. 591-598 ◽  
Author(s):  
Satoshi Mikoshiba ◽  
Shuzi Hayase
Keyword(s):  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Low Density ◽  
Interlayer Dielectrics ◽  
Low Dielectric

Deposition and Characterization of Low-Dielectric-Constant SiOC(-H) Thin Films for Interlayer Dielectrics in Multilevel Interconnections

2007 ◽  
Vol 50 (6) ◽  
pp. 1803 ◽  
Author(s):  
Rangaswamy Navamathavan ◽  
An Soo Jung ◽  
Hyun Seung Kim ◽  
Young Jun Jang ◽  
Chi Kyu Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Interlayer Dielectrics ◽  
Low Dielectric

Application of Fluorinated Amorphous Carbon Thin Films for Low Dielectric Constant Interlayer Dielectrics

1998 ◽  
Vol 37 (Part 1, No. 4A) ◽  
pp. 1809-1814 ◽  
Author(s):  
Kazuhiko Endo ◽  
Toru Tatsumi ◽  
Yoshihisa Matsubara ◽  
Tadahiko Horiuchi
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Amorphous Carbon ◽  
Low Dielectric Constant ◽  
Interlayer Dielectrics ◽  
Low Dielectric ◽  
Carbon Thin Films

Rapid Thermal Processing of Hydrogen Silsesquioxane for Low Dielectric Constant Performance

1999 ◽  
Vol 565 ◽  
Author(s):  
J. N. Bremmer ◽  
D. Gray ◽  
Y. Liu ◽  
K. Gruszynski ◽  
S. Marcus
Keyword(s):  
Dielectric Constant ◽  
Thermal Processing ◽  
Low Dielectric Constant ◽  
Process Conditions ◽  
Low Density ◽  
Hydrogen Silsesquioxane ◽  
Thermal Cure ◽  
Cure Process ◽  
Low Dielectric ◽  
Low K

AbstractLow dielectric constant hydrogen silsesquioxane films were achieved by rapid thermal cure processing with production viable equipment. A reduced dielectric constant of k = 2.5–2.6 is demonstrated by optimizing rapid thermal cure process conditions to produce low density hydrogen silsesquioxane thin films. This is a significant reduction relative to production proven furnace cure processed hydrogen silsesquioxane with k = 2.9. Concurrent with reduced k performance is a characteristic film expansion which contributes to formation of a low density structure. A mechanism for film expansion and relevance to low k performance is described; and issues relative to integration of rapid thermal processed low k hydrogen silsesquioxane are discussed.

Preparation Of Low-Density Xerogels At Ambient Pressure For Low K Dielectrics

1995 ◽  
Vol 381 ◽  
Author(s):  
D. M. Smith ◽  
J. Anderson ◽  
C. C. Cho ◽  
G. P. Johnston ◽  
S. P. Jeng
Keyword(s):  
Dielectric Constant ◽  
Ambient Pressure ◽  
Supercritical Drying ◽  
Temperature Limit ◽  
Ambient Pressure Drying ◽  
Low Dielectric Constant ◽  
Low Density ◽  
Silica Xerogels ◽  
High Temperature Limit ◽  
Low Dielectric

AbstractLow density silica xerogels have many properties which suggest their use as a low dielectric constant material. Recent process improvements to control capillary pressure and strength by employing aging and pore chemistry modification, such that shrinkage is minimal during ambient pressure drying, have eliminated the need for supercritical drying. Although xerogels offer advantages for intermetal dielectric (IMD) applications because of their low dielectric constant (<2), high temperature limit, and compatibility with existing microelectronics precursors and processes, they suffer from unanswered questions. These include: 1) are all pores smaller than microelectronics features, 2) what are their mechanical properties (for processing and particle generation), and 3) what is their thermal stability. We have produced bulk xerogels under similar conditions to those used for films and studied the effect of density on the pore size distribution and bulk modulus.

Effect of material properties on integration damage in organosilicate glass films

2001 ◽  
Vol 16 (12) ◽  
pp. 3335-3338 ◽  
Author(s):  
E. Todd Ryan ◽  
Jeremy Martin ◽  
Kurt Junker ◽  
Jeff Wetzel ◽  
David W. Gidley ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Material Properties ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Low Density ◽  
Etch Patterns ◽  
Low Dielectric ◽  
Organosilicate Glass

Most organosilicate glass (OSG), low dielectric constant (low-κ) films contain Si–R groups, where R is an organic moiety such as −CH3. The organic component is susceptible to the chemically reactive plasmas used to deposit cap layers, etch patterns, and ash photoresist. This study compares a spin-on, mesoporous OSG film with a completely connected pore structure to both its nonmesoporous counterpart and to another low-density OSG film deposited by plasma-enhanced chemical vapor deposition. The results show that the film with connected pores was much more susceptible to integration damage than were the nonmesoporous OSG films.

Sign in / Sign up

Export Citation Format

Share Document