Defect-Free Band-Edge Photoluminescence in SiGeC Strained Layers Grown by Rapid Thermal Chemical Vapor Deposition

1995 ◽  
Vol 379 ◽  
Author(s):  
C. W. Liu ◽  
A. St. Amour ◽  
J. C. Sturm ◽  
Y. R. J. Lacroix ◽  
M. L. W. Thewalt
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Band Edge ◽  
Strained Layers ◽  
Thermal Chemical Vapor Deposition ◽  
Free Band ◽  
First Time ◽  
Excitation Conditions

ABSTRACTThe defect-free band-edge photoluminescence at both 30K and 77K was observed for the first time in Si/SiGeC/Si quantum wells. The SiGeC samples were prepared by rapid thermal chemical vapor deposition (RTCVD) by using methylsilane as carbon source added in a dichlorosilane and germane mixture. Deep photoluminescence around 0.8 eV, previously reported by Boucaud et al., was no longer observed under any excitation conditions. Compared to control Si/SiGe/Si quantum wells, the initial effect of adding the C is to decrease the bandgap of the host SiGe layers, despite the fact that the diamond has a large bandgap.

Well-Resolved Band-Edge Photoluminescence from Strained Si1–xGex Layers Grown by Rapid Thermal Chemical Vapor Deposition

1991 ◽  
Vol 220 ◽  
Author(s):  
J. C. Sturm ◽  
P. V. Schwartz ◽  
H. Manoharan ◽  
Q. Mi ◽  
L. C. Lenchyshyn ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Chemical Vapor ◽  
Band Edge ◽  
Strained Layers ◽  
Alloy Scattering ◽  
Thermal Chemical Vapor Deposition ◽  
Band Edge Luminescence

ABSTRACTWell resolved band-edge luminescence of excitons in silicon-germanium alloy strained layers, quantum wells, and superlattices has been observed in films grown by Rapid Thermal Chemical Vapor Deposition. The signal is due to bound excitons at low temperatures and free excitons at higher temperatures, and has a strong no-phonon signal which is caused by alloy scattering. Bandgaps inferred from photoluminescence agree well with those measured by absorption spectroscopy, inferring that a no-phonon process dominates the band-edge absorption.

Single and Symmetric Double Two-Dimensional Hole Gases at Si/SiGe Heterojunctions Grown by Rapid Thermal Chemical Vapor Deposition

1991 ◽  
Vol 220 ◽  
Author(s):  
V. Venkataraman ◽  
J. C. Sturm
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Two Dimensional ◽  
Dopant Segregation ◽  
Thermal Chemical Vapor Deposition ◽  
Double Heterostructures ◽  
First Time

ABSTRACTTwo dimensional hole gases have been investigated in Si/SiGe modulation doped heterostructures grown by RT-CVD for the first time. Single, both normal and inverted, and double heterostructures were studied. The results suggest that any asymmetry due to dopant segregation or autodoping between the normal and inverted structures occurs on a scale of less than 1 nm.

Deposition of Monolayer-Scale Germanium/Silicon Heterostructures by Rapid Thermal Chemical Vapor Deposition

1994 ◽  
Vol 342 ◽  
Author(s):  
A. St. Amour ◽  
J.C. Sturm
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Thermal Chemical Vapor Deposition ◽  
Cvd Growth ◽  
First Time ◽  
Germanium Silicon ◽  
Silicon Heterostructures

ABSTRACTDeposition of monolayer scale Ge/Si heterostructures by Rapid Thermal Chemical Vapor Deposition has been achieved for the first time. All previous work in this area was by Molecular Beam Epitaxy. We have observed the change in Ge growth rate at 500°C as the Si substrate was covered by the first monolayer of Ge. Auger Electron Spectroscopy and Raman scattering experiments determined that the CVD growth mode for Ge on Si (100) at 550°C is Stranski-Krastanov, with the transition to islanding occurring after three monolayers.

Structural and Optical Properties of Sigec Alloys and Multi-Quantum Wells Grown by Rapid Thermal Chemical Vapor Deposition

1995 ◽  
Vol 379 ◽  
Author(s):  
P. Boucaud ◽  
C. Guedj ◽  
F. H. Julien ◽  
D. Bouchier ◽  
J. Boulmer ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Localized States ◽  
Structural And Optical Properties ◽  
Thermal Chemical Vapor Deposition ◽  
Strong Segregation

ABSTRACTWe have investigated structural and optical properties of SiGeC layers. Bulk and multiquantum wells heterostructures were grown by rapid thermal chemical vapor deposition. The photoluminescence of these structures exhibits two distinct features : deep level photoluminescence associated with localized states and bandedge photoluminescence which gives an indication of the band gap variation due to carbon incorporation in substitutional sites. In the case of multiquantum wells heterostructures, a strong segregation is reported as the growth temperature is decreased. An alternate technique to incorporate carbon in SiGe layers, the pulsed laser induced epitaxy with an excimer laser, is presented. The incorporation of carbon in substitutional sites is evidenced by Raman spectroscopy. As the laser flux is increased, new Raman lines associated to carbon-induced disorder are observed in the spectra.

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