Deposition of Monolayer-Scale Germanium/Silicon Heterostructures by Rapid Thermal Chemical Vapor Deposition

1994 ◽  
Vol 342 ◽  
Author(s):  
A. St. Amour ◽  
J.C. Sturm
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Thermal Chemical Vapor Deposition ◽  
Cvd Growth ◽  
First Time ◽  
Germanium Silicon ◽  
Silicon Heterostructures

ABSTRACTDeposition of monolayer scale Ge/Si heterostructures by Rapid Thermal Chemical Vapor Deposition has been achieved for the first time. All previous work in this area was by Molecular Beam Epitaxy. We have observed the change in Ge growth rate at 500°C as the Si substrate was covered by the first monolayer of Ge. Auger Electron Spectroscopy and Raman scattering experiments determined that the CVD growth mode for Ge on Si (100) at 550°C is Stranski-Krastanov, with the transition to islanding occurring after three monolayers.

Single and Symmetric Double Two-Dimensional Hole Gases at Si/SiGe Heterojunctions Grown by Rapid Thermal Chemical Vapor Deposition

1991 ◽  
Vol 220 ◽  
Author(s):  
V. Venkataraman ◽  
J. C. Sturm
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Two Dimensional ◽  
Dopant Segregation ◽  
Thermal Chemical Vapor Deposition ◽  
Double Heterostructures ◽  
First Time

ABSTRACTTwo dimensional hole gases have been investigated in Si/SiGe modulation doped heterostructures grown by RT-CVD for the first time. Single, both normal and inverted, and double heterostructures were studied. The results suggest that any asymmetry due to dopant segregation or autodoping between the normal and inverted structures occurs on a scale of less than 1 nm.

scholarly journals Effect of Si and SiO2Substrates on the Geometries of As-Grown Carbon Coils

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Semi Park ◽  
Sung-Hoon Kim ◽  
Tae-Gyu Kim
Keyword(s):  
Thin Film ◽  
Thermal Expansion ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quartz Substrate ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Thermal Chemical Vapor Deposition ◽  
Surface Morphologies

Carbon coils could be synthesized using C2H2/H2as source gases and SF6as an incorporated additive gas under thermal chemical vapor deposition system. Si substrate, SiO2thin film deposited Si substrate (SiO2substrate), and quartz substrate were employed to elucidate the effect of substrate on the formation of carbon coils. The characteristics (formation densities, morphologies, and geometries) of the deposited carbon coils on the substrate were investigated. In case of Si substrate, the microsized carbon coils were dominant on the substrate surface. While, in case of SiO2substrate, the nanosized carbon coils were prevailing on the substrate surface. The surface morphologies of samples were investigated step by step during the reaction process. The cause for the different geometry formation of carbon coils according to the different substrates was discussed in association with the different thermal expansion coefficient values of Si and SiO2substrates and the different etched characteristics of Si and SiO2substrates by SF6 + H2flow.

scholarly journals Controlled Geometry Formation of the Carbon Coils by the Substrate Pretreatment

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Semi Park ◽  
Sung-Hoon Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Reaction Time ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Pretreatment Method ◽  
Thermal Chemical Vapor Deposition ◽  
Carbon Particles ◽  
Thermal Etching ◽  
Diamond Powders

Carbon coils could be synthesized using C2H2/H2 as source gases and SF6 as an incorporated additive gas under thermal chemical vapor deposition system. Prior to the carbon coils deposition reaction, the supporting substrates were pretreated using various methods. Among the methods, the thermal etching pretreatment of Ni-SiO2 substrate with SF6 leads to the exclusive formation of the nanosized carbon coils. The diamond powders pretreatment of Si substrate gives rise to the dominant formation of the microsized carbon coils after 10 minutes reaction time. The geometry selectivity for the carbon coils in a specific pretreatment method was discussed in association with the peeled-off Ni layers by the thermal etching pretreatment with SF6 and the remained carbon particles on Si substrate by the diamond powders pretreatment.

Defect-Free Band-Edge Photoluminescence in SiGeC Strained Layers Grown by Rapid Thermal Chemical Vapor Deposition

1995 ◽  
Vol 379 ◽  
Author(s):  
C. W. Liu ◽  
A. St. Amour ◽  
J. C. Sturm ◽  
Y. R. J. Lacroix ◽  
M. L. W. Thewalt
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Band Edge ◽  
Strained Layers ◽  
Thermal Chemical Vapor Deposition ◽  
Free Band ◽  
First Time ◽  
Excitation Conditions

ABSTRACTThe defect-free band-edge photoluminescence at both 30K and 77K was observed for the first time in Si/SiGeC/Si quantum wells. The SiGeC samples were prepared by rapid thermal chemical vapor deposition (RTCVD) by using methylsilane as carbon source added in a dichlorosilane and germane mixture. Deep photoluminescence around 0.8 eV, previously reported by Boucaud et al., was no longer observed under any excitation conditions. Compared to control Si/SiGe/Si quantum wells, the initial effect of adding the C is to decrease the bandgap of the host SiGe layers, despite the fact that the diamond has a large bandgap.

Formation of β‐SiC at the interface between an epitaxial Si layer grown by rapid thermal chemical vapor deposition and a Si substrate

1990 ◽  
Vol 67 (4) ◽  
pp. 2176-2179 ◽  
Author(s):  
Ki‐Bum Kim ◽  
Philippe Maillot ◽  
Alan E. Morgan ◽  
Ahmad Kermani ◽  
Yen‐Hui Ku
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Thermal Chemical Vapor Deposition

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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